基于USB接口和FPGA控制的虚拟仪器设计

针对传统虚拟仪器不具有即插即用、热插拔等功能,提出基于FPGA控制及USB接口的虚拟数字示波器的设计方案和具体实现.系统主要包括数据采集、数据传输和应用程序设计等.采用FPGA控制和USB接口实现数据的处理、转换、存储与传输.同时使用Borland C++Builder进行软件设计,可实现对硬件电路的控制以及数据的显示等.该系统能实现幅度为±0.1～±25 V,频率为0～1 MHz信号的测量并显示.     

基于FPGA的Cameralink高通量数据交互研究北大核心CSCD

针对目前高速科研相机的常用Cameralink视频信号传输接口需专用数据采集卡连接到计算机导致系统灵活性不够的问题,提出一种基于FPGA的Cameralink接口Deca模式下高通量数据实时交互处理方案。硬件上利用编解码芯片完成Cameralink接口的数字图像采集和转换,输出LVDS信号。软件设计采用异步FIFO完成数据缓存及转换,解决跨时钟域的时序匹配疑难。FPGA设计结合Cameralink接口最大通量数据传输协议80 bits模式10 tap/8bit格式准确数据交互。通过Modelsim仿真验证及实物测试,结果表明在sCMOS相机满帧全速2048×2048@100 fps最大85 MHz下,FPGA与Cameralink接口的高通量数据准确控制,并向下兼容Base、Medium及Full模式。具备很高灵活性及应用价值。     

基于FPGA的PCI接口数据采集系统设计研究

本文从研华公司在FPGA基础上的PCI接口数据采集系统设计经验入手,对基于FPGA的PCI接口数据采集系统的硬件和软件设计进行了详细分析,最后对相关设计进行了测试,希望为我国相关领域的发展起到促进作用.     

基于FPGA设计EnDat编码器数据采集后续电路

随着集成电路技术的发展,FPGA以其体积小、速度快、功耗低、设计灵活、利于系统集成、扩展升级等优点,被广泛地应用于高速数字信号传输及数据处理。EnDat数据接口是适用于编码器的双向数字接口。EnDat可传输编码器的位置值,也能传输或更新保存在编码器中的信息或保存新信息。在此介绍了EnDat接口的特点、功能、时序和数据传输、OEM数据存储,以及编码器数据采集后续电路设计方案,基于FPGA编码器接口的设计,用以进行编码器和DSP处理器之间的通讯。     

多路接口与E1协议转换器设计与实现

针对通信带宽越来越高,低速设备无法连接到高速的E1线路的问题,提出了一种基于可编程逻辑器件FPGA、嵌入式微处理器MPC875的多路接口与E1协议转换器的设计,给出了硬件原理框图及主要元器件的选型,并对多路接口数据调度方法、空时隙处理策略、FPGA结构设计、软件设计流程进行了详细说明。通过实现RS 232,RS 449,V.35三路接口与E1的协议转换,证明该方案是可行的。     

DSP完成的实时信号模拟器

基于DSP设计了一种可编程实时信号模拟器。该模拟器包括USB、模拟、数字、用户自定义接口。其中USB接口可以方便地和PC机进行通信,模拟、数字和用户接口输出模拟器产生的模拟和数字信号。DSP是模拟器的核心器件,对数据进行处理,和各部分的管理。FPGA完成DAC等器件的时序及接口控制等。本模拟器提供在线升级功能,用户经USB接口可对板上的FPGA和DSP程序进行升级。另外,FPGA编程可产生用户需要的各种接口信号。这样便于和其他模块进行连接,扩大了适用范围。DSP编程可以产生用户需要的波形。该模拟器在数据通信系统等领域,具有一定的实用意义。     

变形镜驱动器控制电路的设计

96通道变形镜驱动器内含6个驱动模块,每个驱动模块含有16个输出通道,为了更加有效地管理控制这6个驱动模块,并实现与上位机、图像处理模块的交互通信,设计了变形镜驱动器控制电路。该电路包含了硬件设计和软件设计,其中硬件设计包含了电源设计、接口设计和FPGA设计,旨在实现高速向CPCI总线传输来自SPI接口的驱动矢量数据,同时把这些数据以适当的速度发给上位机。软件设计包括FPGA程序和NIOS系统程序设计,其中NIOS程序旨在实现上位机对上位机指令或数据的接收、处理和发送,以及对系统参数的配置以及驱动模块参数的保存等。结果表明,该电路不仅能够以200 f/s的速率正确接收并发送来自图像处理模块的驱动矢量数据,还能够正确收发来自上位机网口或者串口的控制指令,实现单通道与驱动矢量的切换、驱动矢量数据源的切换、单通道电压设置、放大器参数调试和保存以及通道数据读取、回传等功能,达到了预定的设计目标。     

基于FPGA的微型数字存储系统设计

详细介绍基于FPGA的微型数字存储系统的设计,该系统利用FPGA对Flash存储器进行读、写、擦除等操作．并将写入的数据通过计算机USB接口读入上位机,以此实现数据读出、显示等功能。该系统选用FPGA作为Flash的主控制器,数据传输时一次传送8位（一个字节）或更多,USB接口通信是基于CY7C68013实现的,其控制逻辑主要也是由FPGA实现。该系统设计利用FPGA硬件逻辑编程,可方便灵活地实现高速、大容量Flash程序编写．且USB接口高速传输,支持热插拔,成本低,应用广泛。     

基于SOPC可重构的图像采集与处理系统设计

针对目前PC算法无法实现图像实时处理以及固定硬件平台很难实现算法修改或者升级的问题,设计一种基于SOPC可重构的图像采集与处理系统,实现了图像数据的片上实时处理以及在不改变硬件电路结构而完成算法修改或者升级的功能。此系统围绕两块Xilinx FPGA芯片进行设计,通过FPGA以及其Microblaze 32 bit软核处理器和相关接口模块实现硬件电路设计,结合FPGA开发环境ISE工具和EDK工具协作完成软件设计。由于采用SOPC技术和可重构技术,此设计具有设计灵活、处理速度快和算法可灵活升级等特点。     

基于FPGA的微型数字存储系统设计

详细介绍基于FPGA的微型数字存储系统的设计,该系统利用FPGA对Flash存储器进行读、写、擦除等操作,并将写入的数据通过计算机USB接口读入上位机,以此实现数据读出、显示等功能.该系统选用FPGA作为Flash的主控制器,数据传输时一次传送8位(一个字节)或更多,USB接口通信是基于CY7C68013实现的,其控制逻辑主要也是由FPGA实现.该系统设计利用FPGA硬件逻辑编程,可方便灵活地实现高速、大容量Flash程序编写,且USB接口高速传输,支持热插拔,成本低.应用广泛.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.