SIR带状线带阻滤波器的设计

将具有阻带特性的微带马刺线结构引入到带状线中,设计了一款中心频率为2.32 GHz,相对带宽为9.5%,阻带衰减为50 dB的三阶马刺线式带阻滤波器。相比于传统的并联开路短截线型带阻滤波器,马刺线式带阻滤波器的横向尺寸大为减小,结构更加紧凑。采用SIR(stepped-impedance resonator)结构,按相同指标设计了一款三阶SIR马刺线式带阻滤波器。与马刺线式带阻滤波器相比,SIR马刺线式带阻滤波器结构更为紧凑,纵向尺寸缩小约17%,并具有更好的谐波抑制特性。     

基于并联耦合线谐振节的窄带带通滤波器的研究

设计了一种基于并联耦合线谐振节的窄带带通滤波器。该滤波器由常见平行耦合线带通滤波器与并联耦合线谐振节构成。利用并联耦合线谐振节结构的特性,借助ADS软件设计了一个中心频率为4.9 GHz的窄带带通滤波器。仿真结果表明,其3 dB带宽为236 MHz,矩形系数为2.8。该滤波器具有良好的带外抑制能力和更加陡峭的通带到阻带过渡。     

基于DGS和SIR单元的超宽阻带低通滤波器设计

为了解决传统的微带线低通滤波器尺寸偏大,阻带较窄的问题,采用阶梯阻抗谐振(SIR)单元加载哑铃型缺陷地结构(DGS)单元设计了一个五阶微带低通滤波器,并通过在主传输线两侧添加并联开路枝节,以补偿DGS微带线的特性阻抗。测试结果表明:该滤波器结构尺寸21.6mm×8mm,3dB截止频率4GHz,通带内平均驻波比小于1.5,阻带范围5GHz～35GHz。实现了滤波器结构尺寸的减小和超宽阻带。     

基于耦合线加载开路枝节的宽带带阻滤波器设计

基于单端接地耦合线结合微带传输线加载开路枝节,提出了一款宽带带阻滤波器。该滤波器由输入输出端的单端接地耦合线并联微带传输线上加载三个开路枝节组成。采用奇偶模理论分析、传输线模型和结构模型仿真优化,对滤波器的特性开展了研究。实物加工测试结果与仿真结果的一致性好,验证了所设计的宽带带阻滤波器。该滤波器的阻带中心频率为2 GHz, 3 dB衰减带宽为98%(1.19～3.15 GHz),20 dB衰减带宽为84.5%(1.24～2.93 GHz),阻带带内抑制大于35 dB,结构紧凑,可与航电系统设备板级电路集成,用于电磁干扰防护。     

新型D-CRLH传输线宽带带阻滤波器设计

提出一种新颖的对偶复合左右手传输线(D-CRLH TL)结构单元,设计了一款小型化四阶宽带带阻滤波器。通过缝隙耦合形成左手电容和右手电感,位于结构下方的矩形贴片形成右手电容,与矩形贴片相连接的短截线形成左手电感。可以通过改变矩形贴片宽度和短截线的长度来调节带阻滤波器的中心频率和带宽。滤波器有效设计尺寸为11.5 mm×6.7 mm,等于0.23λ×0.13λ(λ为中心频率在自由空间的波长),尺寸较小。仿真测试结果表明该滤波器阻带中心频率为5.6 GHz,20 d B阻带带宽为50%,50 d B阻带带宽为30%。     

基于反向耦合线的超宽阻带带阻滤波器

提出了一种全新的超宽阻带带阻滤波器结构。该结构由一段加载开路传输线的反向耦合传输线和一对开路传输线并联构成。理论分析表明,通过适当设置电路参数,该滤波器可以产生多个传输零点,构成一个具有高选择性高抑制性的宽带带阻滤波器。通过改变滤波器中的电路参数,特别是其中传输线的特征阻抗,可以灵活地调整滤波器的阻带带宽、阻带衰减和通带性能。基于这一理论,设计了一种宽带带阻滤波器。测试结果表明,该滤波器不仅可以提供109.40%的20dB相对阻带带宽和过渡尖锐的阻带,更可以提供高达105.73%的25dB相对阻带带宽。     

小型化SIR同轴腔体双通带滤波器研究

基于频率变换技术的双通带滤波器综合理论,应用阶跃阻抗谐振器(SIR)的基本原理,在双通带滤波器设计中引入λg/4型SIR同轴腔体谐振单元,设计了一种交叉耦合型拓扑结构的小型化同轴腔体双通带滤波器,相比于实际长度λg/4的传统滤波器,尺寸压缩了约50%。仿真结果显示,两个通带内回波损耗均大于20 dB,插入损耗小于0.1 dB,通带之间的阻带衰减特性良好。该滤波器的两个传输零点提高了阻带抑制度,满足了通信系统对滤波器小型化、低插损、高选择性的要求,能够广泛应用于双频带通信系统。     

多传输零点的宽带带阻滤波器设计

提出了一种基于横向型信号干扰的新型多传输零点的宽带带阻滤波器。通过采用终端加载一段四分之一波长开路传输线枝节的弯折型反耦合线与两段对称的半波长传输线开路枝节相并联的方式,在滤波器的阻带内引入了五个传输零点,并在通带内产生了四个反射零点,从而获得了陡峭的过渡带特性、宽阻带特性以及较好的阻带抑制水平。最终设计的宽带带阻滤波器中心频率为3 GHz,20 d B衰减带宽可达106%。     

一种新型开路环谐振带通滤波器

利用开路环终端的内部电容耦合效应,提出一种结构紧凑,具有小型化和良好的二阶和三阶谐波抑制能力的开路环谐振器窄带带通滤波器.分析了开路环终端电容内部耦合结构变化对带通滤波器谐波抑制特性的影响,并利用上述结构仿真和设计了一个中心频率为1.5 GHz的带通滤波器,模拟结果与实验结果吻合良好,验证了滤波器的设计思想.     

基于新型D-CRLH-TL的双频带阻滤波器设计

通过将对称交指螺旋线应用于传统的对偶复合左右手传输线（D-CRLH-TL）结构,改进设计了一种新型的D-CRLH-TL结构。采用全波仿真软件对其电磁特性进行了研究,结果表明：改进结构具有良好的带阻特性,阻带内具有两个相互独立的传输零点,并且整体尺寸减小了30%,有效地实现了小型化。在此基础上,利用所提出的D-CRLH-TL结构设计了一款性能优越的双频带阻滤波器。对所设计滤波器进行实物加工并测试,结果表明所设计的滤波器两个阻带中心频率分别为3.47GHz和5.21GHz,阻带带宽分别为26.8%和10%,能够有效抑制WLAN和WMAX频段对超宽带通信的干扰。同时,相比于传统的带阻滤波器结构,所设计带阻滤波器的整体尺寸为20.9mm×12.6mm（0.24λ×0.15λ）,仅为传统结构的50%,小型化优势明显。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.