光电倍增管

美国Burle工业公司的85104型微道板光电倍增管具有很高的灵敏度、极高的红光响应率、大的阴极面积和突出的光子计数能力。这些特性使其非常适用于红光和近红外光谱的探测。这种光电倍增管采用一种半透明的砷化镓光电阴极,在370nm至850nm谱区内可提供大于20％的量子效率,在600nm波长处的峰值量子效率为30％。这样的响应率是在直径为18mm的光电     

光电倍增管的新进展

本文对光电倍增管在阴极、阳极、倍增极以及特殊环境的应用方面所取得的一些新进展进行了介绍。如InGaAs半导体光电阴极,其光谱响应范围为185nm～1010nm;空心光电阴极可测量4π立体角发射;平面网状阳极有较高的收集效率;微通道板倍增极的响应时间可达200ps。列举了已经研制成功的几种新型光电倍增管。     

真空转移装置中透射式Ag-O-Cs光电阴极的研制

介绍了在真空转移装置中进行透射式Ag-O-Cs光电阴极制作的工艺过程,研究了阴极厚度、银膜氧化、激活温度、Cs量等对阴极性能的影响,制作了性能达到阴极灵敏度20 μA/lm以上、光谱响应范围为300～1 200 nm的光电阴极,将此阴极用于具有1 000倍以上增益的微通道板光电倍增管中,整管暗电流小于10 nA.     

一种大尺寸微通道板型光电倍增管

针对高能物理、核物理等国家大科学装置对核心探测器件的需求,研究不同于金属打拿极型倍增系统的大尺寸微通道板型光电倍增管。该光电倍增管最主要的特点是具有20 in（1 in=2.54 cm）的低本底玻壳和微通道板型倍增极结构,使用Sb-K-Cs阴极作为光电转换阴极,该阴极对350~450 nm波段光子的量子效率高,倍增极采用两片微通道板,在电压比较低的情况下可实现107的倍增能力,从而提高了光电倍增管的探测效率和单光子探测能力。与传统的金属打拿极型光电倍增管相比,20 in微通道板型光电倍增管是一种全新的产品结构,具有单光子峰谷比高、本底低、响应时间快、后脉冲比例小等特点。     

大电流、高增益门控光电倍增管的研究

介绍了一个目前国内外公开文献报导中输出电流最大、电流增益最高且具有门控选通功能的微通道板光电倍增管，该管采用了大直径输入窗、多碱光电阴极、三块微通道作倍增极的近贴聚焦结构。     

具有优化倍增层InAlAs/InGaAs雪崩光电二极管

通过优化倍增层的厚度,研究了InAlAs/InGaAs雪崩光电二极管增益带宽积和暗电流之间的关系。利用仿真计算得出200 nm厚的倍增层能够改善增益带宽积并降低暗电流。制成的InAlAs/InGaAs 雪崩光电二极管性能优异,与计算趋势一致。在获得0.85 A/W的高响应和155 GHz的增益带宽积的同时,器件暗电流低于19 nA。这项研究对雪崩光电二极管在未来高速传输的应用具有重要意义。     

提高PMT光子计数系统探测灵敏度的方法

光电倍增管（PMT）光子计数是光子计数技术的一种,通过选择合适的低噪声光电倍增管,并对光电倍增管的光阴极和前几级倍增极进行致冷。以及合理地设计光电倍增管的高压偏置电路和设定后续甄别器的鉴别闽值,可以使PMT光子计数系统对弱光的探测灵敏度达到甚至优于10^-17W。文中阐述了PMT光子计数的原理及系统组成．并对提高系统探测灵敏度的技术环节进行了分析。     

欧洲超二代像增强器技术的选择及进一步发展

二代像增强器采用Na₂KSb光电阴极,三代像增强器却采用GaAs光电阴极。由于GaAs光电阴极具有更高的阴极灵敏度,因此三代像增强器的性能远高于二代像增强器。在二代像增强器基础上发展的超二代像增强器,阴极灵敏度有了很大提高,因此性能也有很大提高,同时大大缩短了与三代像增强器的性能差距。超二代像增强器属于Na₂KSb材料体系,生产成本低,与三代像增强器相比性价比较高,所以欧洲的像增强器产商选择了超二代像增强器技术的发展路线。超二代与三代像增强器技术并行发展了30多年,两者性能均有大幅提高。超二代与三代像增强器的性能差距主要体现在极低照度（＜10－4 lx）条件下,而在其它照度条件下,性能基本相当。超二代像增强器的性能仍有提高的空间。增益方面,在微通道板的通道内壁上制作高二次电子发射系数的材料膜层可以提高增益;信噪比方面,采用光栅窗可提高阴极灵敏度,从而提高信噪比;分辨力方面,在微通道板输出端制作半导体膜层、采用高清荧光屏均可提高分辨力。阴极灵敏度是光电阴极的指标,不是像增强器的整体性能指标。阴极灵敏度对像增强器整体性能的影响体现在增益、信噪比以及等效背景照度指标中。无论是超二代还是三代像增强器,都区分不同的型号。不同型号的超二代或三代像增强器性能均不相同。超二代和三代像增强器的性能指标是在A光源条件下测量的,而A光源光谱分布与实际应用环境中的光谱分布并不等同,同时Na₂KSb和GaAs光电阴极的光谱分布不相同,所以超二代和三代像增强器的信噪比、分辨力等性能指标不具备可比性。     

一种提高光电倍增器光电阴极量子效率的方法

提出了一种可以提高光电倍增管光电阴极量子效率的方法。通过分析光电阴极的光电发射过程,从提高光子吸收率Pa和光电子迁移至真空一侧材料表面的几率Pe出发,确定可以在光电阴极膜层结构设计上增加合适的膜层,该膜层具有高带隙和减反射的作用。由于光电倍增管的外壳通常为细长的玻璃管,而常规的溅射设备为50mm的大靶,直接使用大靶对细管内部镀膜,效率低下且均匀性差。在常规大靶的基础上进行改造,成功实现了在细管内部快速均匀镀膜。使用分光设备测试光电阴极的光谱响应,结果表明,改进产品的光电阴极量子效率从常规的25%提高至35%。     

大面积MCP-PMT K_2CsSb光电阴极理论与测控技术研究

针对SBA/UBA光电阴极和中国科学院高能物理研究所380⁵10 nm转换波长的闪烁体,分别从K2CsSb光电阴极第一性原理、结构优化、以及材料生长机理与测控技术等方面进行研究。第一性原理计算结果表明,双碱光电阴极K1.75CsSb1.25是直接禁带半导体,能带弯曲最大,功函数最小;中微子与闪烁体相互作用后发射光子的光谱范围在380510 nm转换波长的闪烁体,分别从K2CsSb光电阴极第一性原理、结构优化、以及材料生长机理与测控技术等方面进行研究。第一性原理计算结果表明,双碱光电阴极K1.75CsSb1.25是直接禁带半导体,能带弯曲最大,功函数最小;中微子与闪烁体相互作用后发射光子的光谱范围在380⁵10 nm,可以确定双碱阴极透射式工作范围在2.92510 nm,可以确定双碱阴极透射式工作范围在2.92³.26 eV,反射式工作范围在2.433.26 eV,反射式工作范围在2.43².92eV;针对球形光电倍增管结构,提出了透射式与反射式阴极量子效率最大化方案和K1.75CsSb1.25阴极6点监控制备方法,给出了测试方法。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.