正模式PCTS光阀透过率随波长分布特性的研究及其应用

研究了正模式聚合物稳定的胆甾相液晶（ Ｐ Ｓ Ｃ Ｔ）光阀开、关态时的光透过率在 ４００～１６００ｎｍ 波段的分布特性,通过实验分析了聚合物浓度和胆甾液晶的螺距对光阀在关态时光透过率随波长分布特性的影响。优化制作条件,制作出一种新型的 Ｐ Ｓ Ｃ Ｔ 光阀,配合 Ｃ Ｃ Ｄ 摄像器和计算机,设计发明了一种火灾监控装置,通过对高温物体辐射出的近红外光的监测,可以准确报警。     

车载负性CLCD电光特性研究

彩色液晶显示器件(CLCD)在相同电压驱动条件下,各波长电光特性有很大差异,从而对图像显示的色彩饱和度有较大的影响。用UV-Vis8500型双光束紫外/可见分光光度计测量在不同电压驱动下负性TN-LCD,STN-LCD和VA-LCD的电光特性,分析比较其三基色的电光特性、阈值特性和陡度随波长的变化关系。结果表明,TN-LCD的Vth、Vsat和V50随波长的增大而减小,而Vth、Vsat和V50减小的快慢基本一致;STN-LCD的Vth、Vsat和V50随波长的增大而减小,而Vth、Vsat和V50减小速度在各波长上快慢不一;VA-LCD的Vth、Vsat和V50都是随着波长的增加而逐渐增大,而Vsat增大速度比V50快,V50增大速度比Vth快。对常用三种不同负性液晶显示器件驱动电压的选取进行比较分析,其结果为CLCD选取驱动电压提供一定的指导作用。     

大分子光引发剂及固化时间对PDLC膜光电性能的影响

聚合物分散液晶膜(PDLC)是将液晶和聚合物混合得到的一种综合性能优异的膜材料.聚合物作为成膜材料,其固化过程是影响聚合物分散液晶膜电光特性的重要因素.实验采用原子转移自由基聚合法制备活性大分子引发剂,引发可聚合单体进行聚合,通过光引发聚合诱导相分离法制备PDLC膜.研究表明:采用该方法可以极大地改善PDLC的光电性能,并且通过改变固化时间可以调节PDLC的各项光电性能,随着固化时间的增加,PDLC阈值电压(Vth)、饱和电压(Vsat)都随之增加,膜关态透光率(TOFF)、开态透光率(TON)随之降低.     

聚合物分散型液晶薄膜中折射率匹配的优化

分析了聚俣物分散型液晶薄膜在亮态时造成折射率不匹配的各种因素，介绍了一种定量计算聚合物基体和液晶之间折射率不匹配程度的方法。最后，通过选择合适的预聚物材料和液晶材料并控制固化速率，制备出一种在开态具有较高光透过率的ＰＣＬＣ薄膜，其聚合物基体的折射率和液晶的寻常折射率，在开态时达到了较好的匹配。     

用于液晶光阀空间光调制器的ITO透明导电膜的研制

本文介绍了ITO(Indium Tin Oxide)透明导电膜的制备工艺,对影响其光学和电学特性的因素作了分析。并讨论了透明导电的机理,在K9玻璃上制备的ITO透明导电膜,在500～600nm波长范围内,典型的峰值透过率为90％,面电阻为40～50Ω/□。用该技术制备的样品作为透明电极,在液晶光阀空间光调制器中得到了应用。     

聚合电场频率对聚合物稳定胆甾相液晶光电性能的影响

研究了聚合时外加电场对聚合物稳定胆甾相液晶(PSCT)光电性能的影响。采用紫外光聚合诱导相分离法(PIPS)制备了聚合物稳定胆甾相液晶,通过改变光聚合时的外加电场频率控制聚合物网络结构,改善PSCT的光电性能。结果表明:电场频率影响聚合单体的扩散,从而影响聚合物网络形貌。聚合电场频率低,聚合单体扩散快,形成的聚合网络疏松,网孔较大,响应速度慢,关态透过率大,阈值和饱和电压小;聚合电场频率高,阻碍单体的扩散,形成的聚合物网络致密,网孔较小,响应速度快,关态透过率低,阈值电压和饱和电压大。     

一种光学状态可由电场控制的液晶复合材料的制备与表征

液晶材料对电、热、磁、光等外界物理量的变化具有不同的响应特性,向其中添加具有一定特性的化合物,可以得到具备一定响应特性的液晶复合材料。利用所制备的液晶复合材料对于电场变化具有响应特性的特点,制备出具有信息记录功能的复合材料。合成手性离子液体,按一定配比将其加入手征向列相液晶(N~*-LC)中,得到反射波段可电控的手征向列相液晶/手性离子液体复合材料。实验结果表明:材料初始状态为光透射状态;对材料施加直流电压40V时,样品表现为光散射状态,透过率低于10%;施加高频交流电压40V时,样品表现为半透明镜面反射,反射范围覆盖400～750nm,透射率为45%左右;撤去电场后,可恢复至初始状态,并且每种状态都具有一定的记忆效应。该种液晶复合材料制备简单,无需紫外辐射工艺,且具有电场响应特性,可以通过电场控制在可见光范围内表现出光透射、强烈光散射、半透明镜面反射3种不同状态,具有记忆效应,操作简单方便。     

提高红外写入液晶光阀透明电极导电性能方法的研究

介绍了一种改善红外写入液晶光阀半导体透明导电膜导电性能的一种方法。通过对氧化铟掺铟比例的研究，经过大量科学实验，并采用X光电子能谱仪对两者的比例进行了定量分析，发现在对膜层透过特性影响不大的情况下，两者之间的质量百分比在90％比10％左右时，其膜层导电性能有明显提高，从方电阻十几kΩ／□降至730Ω／□。我们将此法制备的以BaF2为基底，在中心波长为10．6μm处透过率为56％，方电阻为730Ω／□的透明导电膜应用在红外写入液晶光阀透明电极上，得到了令人满意的效果。     

用于户外巨型显示的新型反射式固态液晶光阀薄膜

聚合物分散螺旋织构（PDCT）液晶固态薄膜显示器是一种新型高反射率高对比度反射式液晶显示器。PDCTLC模式同时综合运用了对入射光的两种散射和一种反射机制,成功实现了光学关断态的类纸型亮白色态。这种类纸型薄膜光阀尤其适用于反射式超大屏幕显示装置。     

新型反式聚合物稳定液晶光电薄膜的制备及性能

通过紫外引发相分散法制备了一种新型反式聚合物稳定液晶(PSLC)光电薄膜——平行反式PSLC,并提出其反式变色机理。此薄膜无需垂直取向剂,仅使用普通向列液晶5CB和合成的可聚合丙烯酸单体4′-(4-氰基苯基)苯氧基丁基-甲基丙烯酸酯(CPMA),紫外固化一定时间即可制得。在偏振光照射下其透光率随电压增加而降低,实现了光电薄膜的反式变色效果。通过偏光显微镜照片看出,单体CPMA中的极性棒状基团可以在固化过程中与液晶共同在取向层作用下取向,而不会破坏液晶分子的排列,使体系具有均一的折射率。因此尽管聚CPMA、聚丙烯腈和聚甲基丙烯酸甲酯折射率接近,但使用CPMA得到的反式薄膜的透光率(82.3%)比后两者(23.3%和18.9%)高得多。当向CPMA薄膜施加电场后,CPMA薄膜中部分液晶在聚合物网络限制下不能沿电场取向,它们与不受网络影响而沿电场取向的液晶形成折射率差异,薄膜呈不透明态,实现了光电薄膜的反式效果。当液晶与单体质量比为6:1时,反式薄膜的光电性能最好,阈值电压低于2.3 V·μm~(-1)。     

反应温度对亲核试剂引发点击化学制备聚合物分散液晶电光性能的影响

光聚合诱导相分离法是应用最广泛的制备聚合物分散液晶(PDLC)膜的方法。为了提高PDLC的对比度(CR),通常在PDLC膜中引入二色性染料。然而,目前商业化的染料掺杂PDLC膜还很少,因为光聚合诱导相分离法使用的紫外光会使染料分解;另外,染料会吸收紫外光导致预聚物的聚合速率变慢。亲核试剂引发点击化学反应是最近合成化学的研究热点,可在无紫外光的条件下发生。因此,用亲核试剂引发点击化学反应制备PDLC膜,有望克服传统光聚合诱导相分离法的缺点。本论文,采用亲核试剂引发巯基-烯烃点击化学反应制备PDLC膜,并研究了反应温度对PDLC电光性能的影响。结果表明,温度的改变导致液晶微滴的尺寸发生变化,进而对PDLC的电光性能产生影响。温度升高使得开态透过率(Ton)变小,阈值电压(V_(th))和饱和电压(V_(sat))升高。     

基于Berreman 4×4矩阵对胆甾相液晶Bragg反射带宽的模拟研究

利用Berreman 4×4矩阵和Matlab编程模拟了胆甾相液晶的反射光谱,分析了螺旋数(液晶厚度)、基板的折射率、双折射、折射率色散、固定螺距、梯度螺距和入射角等因素对反射光谱带宽的影响。结果表明,要得到理想的Bragg反射带宽,液晶层的厚度即螺旋数N需达到N≥10;基板折射率会影响最大反射率,基板折射率ng与寻常光折射率no相比,ngno时,最大反射率比较低,ng越小越影响明显,当ng≥no时,具有很好的反射率;折射率的色散和大的入射角会使带宽变窄,而大的双折射Δn和螺距P可以得到较宽的反射带宽,但拓宽效果有限。通过梯度螺距的函数表达式,理论模拟了具有螺距梯度的胆甾相液晶的反射带宽,其对于胆甾相液晶宽波反射的实验研究具有一定的意义。     

Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

The effects of the diffusion control technique by inserting physical vapor deposition (PVD)-TiN film between poly-Si and CVD-TiN films on the properties of p-MISFETs using poly-Si/TiN/HfSiON gate stacks have been studied. This insertion was effective in suppressing the diffusion of Si from poly-Si to HfSiON and was able to reduce the V_th value by 0.12 V while keeping the equivalent oxide thickness and S value constant, when the thicknesses of the PVD and CVD-TiN films were 10 and 5 nm, respectively. Although too much ion implantation of fluorine into the substrate deteriorates S value and I_ON, it was verified that this diffusion control technique, in conjunction with a moderate substrate fluorine implantation, provided a reduction of V_th in pMIS without a deterioration of I_ON.     

液晶盒边界效应对胆甾相液晶电控螺距的影响

研究了共面转换(IPS)液晶盒处于强锚定及弱锚定两种边界状态时横向电场与平面织构胆甾相液晶螺距的关系,探讨了液晶盒表面锚定对胆甾相液晶电控螺距的影响。理论结果表明,共面转换模式下电场可以调谐胆甾相液晶的反射光颜色,而边界锚定效应对电场调谐螺距有显著影响。这一结果为基于电控螺距原理的胆甾相液晶反射式彩色显示方案提供了理论上的依据。     

聚合物稳定胆甾相滤色液晶光阀的显示研究

本文研究了在平面态和场致向列相之间快速切换的聚合物稳定胆甾相(PSCT)液晶光阀的彩色显示。采用紫外光诱导相分离法(PIPS)制备具有染料掺杂的聚合物稳定胆甾相液晶光阀,通过3种染料在可见光区的吸收作用,对入射白光进行选择性吸收过滤,得到不同颜色的出射光。结果表明:当PSCT处在平面态下,分子螺旋排列,染料对入射光波的吸收不受光波偏振方向的影响,器件具有很强的吸收作用,呈现有色态;当处于场致向列相,染料的吸收作用微小,器件呈透明态,因此器件具有一定的对比度,且不需要偏振片;器件在平面态和场致向列相之间快速切换的响应时间短于7ms。PSCT光阀可以用作滤色器,在多种染料的共同作用下,快速选择滤色得到多种彩色可见光,组成彩色显示平面。     

ZnO∶Ti透明导电薄膜的制备与光电性能研究

采用直流磁控溅射法,在水冷7059玻璃衬底上制备了具有高透射率和相对低电阻率的掺钛氧化锌(ZnO∶Ti)透明导电薄膜,研究了溅射偏压对ZnO∶Ti薄膜结构、形貌和光电性能的影响。结果表明,ZnO∶Ti薄膜为六角纤锌矿多晶结构,具有c轴择优取向。溅射偏压对ZnO∶Ti薄膜的结构和电阻率有重要影响。当溅射偏压为10V时,电阻率具有最小值1.90×10–4?.cm。薄膜具有良好的附着性能,可见光区平均透射率超过90%。该ZnO∶Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。     

A negative Vth cell architecture for highly scalable,excellently noise-immune, and highly reliable NAND flash memories

A new, negative V_th cell architecture is proposed where both the erased and the programmed state have negative V_th. This architecture realizes highly scalable, excellently noise-immune, and highly reliable NAND flash memories. The program disturbance that limits the scaling of a local oxidation of silicon (LOCOS) width in a conventional NAND-type cell is drastically reduced. As a result, the scaling limit of the LOCOS width decreases from 0.56 to 0.45 μm, which leads to 20% isolation width reduction. The proposed cell is essential for the future scaled shallow trench isolated cells because improved program disturb characteristics can be obtained irrespective of the process technology or feature size. New circuit techniques, such as a PMOS drive column latch and a V_cc-bit-line shield sensing method are also utilized to realize the proposed cell operation. By using these novel circuit technologies, array noise, such as a source-line noise and an inter bit line capacitive coupling noise, are eliminated. Consequently, the V_th fluctuation due to array noise is reduced from 0.7 to 0.1 V, and the V_th distribution width decreases from 1.2 to 0.6 V. In addition to the smaller cell size and the high noise immunity, the proposed cell improves device reliability. The read disturb time increases by more than three orders of magnitude, and a highly reliable operation can be realized     

Electrohydrodynamic NanoDrip Printing of High Aspect Ratio Metal Grid Transparent Electrodes

The transparent conducting electrode is an essential component in many contemporary and future devices, ranging from displays to solar cells. Fabricating transparent electrodes requires a balancing act between sufficient electrical conductivity and high light transmittance, both affected by the involved materials, fabrication methodology, and design. While metal films possess the highest conductivity at room temperature, a decent optical transmittance can only be achieved with ultrathin films. Structuring the metal into optically invisible nanowires has been shown to be promising to complement or even substitute transparent conductive oxides as dominant transparent electrode material. Here the out‐of‐plane fabrication capability of the recently developed method of electrohydrodynamic NanoDrip printing to pattern gold and silver nanogrids with line widths from 80 to 500 nm is demonstrated. This fully additive process enables the printing of high aspect ratio nanowalls and by that significantly improves the electrical performance, while maintaining the optical transmittance at a high level. Metal grid transparent electrodes optimized for low sheet resistances (8 Ω sq^?1 at a relative transmittance of 94%) as well as optimized for high transmittance (97% at a sheet resistance of 20 Ω sq^?1) are reported, which can be tailored on demand for the use in various applications.