一种裸眼3D电视系统的设计方案

本文提出一种裸眼3D电视系统的设计方案,详细阐述了方案的原理及关键技术的实现.方案系统先将电视信号处理成单视点或双视点图像,然后将单视点或双视点图像转换成N个视点图像,并将N个视点图像交织成一幅合成图像来驱动裸眼3D屏发出图像光实现裸眼3D显示.该方案可快速应用于柱状透镜式和光栅屏障式裸眼3D电视产品,具有广泛的应用价值.     

一种眼镜式3D电视系统的设计

文章提出一种眼镜式3D电视系统的设计,详细阐述了系统的原理、软硬件以及关键技术实现。系统基于高集成度TV SoC芯片和嵌入式Linux操作系统,可快速应用于偏光式3D和快门式3D电视产品,具有广泛的应用价值。     

TCL L46V8200-3D液晶电视

TCLL46V8200-3D是V8200系列中的型号,称为超级智能3D互联网电视。采用了侧入式LED背光源,拥有超薄的机身厚度。TCLL46V8200-3D是一款主动快门式3D电视,随机配送两幅主动快门式3D眼镜,并采用了内置安装的3D发射器。     

快门式3D液晶电视重影消除研究

首先介绍了快门式3D电视的显示原理,然后详细分析了快门式3D液晶电视产生图像重影的主要原因,并针对性地提出了如何消除图像重影的4种具体方法。研究结果表明,运用这些方法,可以有效地解决快门式3D电视的重影问题。最后,给出了用于检测3D电视重影性能的专用测试卡,并说明了该测试卡的使用方法。     

基于插灰帧提高3D图像显示质量的解决方案

文章对现有的快门眼镜式3D图像显示技术进行改进,提出一种基于插灰帧提高3D图像显示质量的解决方案。方案对原始3D图像帧序列进行倍频及插入灰帧处理后,将处理后的3D图像帧序列通过LVDS线发送至液晶显示屏,并同步打开或关闭快门3D眼镜和液晶显示屏背光,呈现3D显示。在图像帧序列中插入灰帧降低了左右眼图像间的3D串扰,同时使液晶面板中像素电容器进行了预充电、缩短了液晶分子的响应时间、改善了图像模糊,提升了3D图像显示质量。     

裸眼3D—3D电视技术发展的必然归宿

2010年,3D潮流可谓锐不可挡,以主动快门式3D技术为代表的眼镜式3D电视大规模登陆市场,市场销售呈现开门红,预计全年全球销量将突破300万台,因此2010年可以称得上真正的"3D电视发展的开元之年"。眼镜的束缚似乎没有阻挡消费者对3D电视的欣赏热情,但冷静之余,我们却不得不面对眼镜式3D电视可能会对视力造成的不良影响,以及长时间观看所带来的头晕、恶心等不良感受,而且对近视眼患者因佩戴"双重"眼镜所带来的痛苦更是不可言状,因此,我们不得不承认,目前的眼镜式3D电视只能作为3D电视技术发展的过渡产品,而最终必然被成熟的裸眼3D电视技术所取代,裸眼3D显示将是未来3D电视技术发展的必然归宿。     

厂商信息速读

偏光薄膜3D眼镜的需求量从2012年第四季度开始预计年同比增长104％，占总3D电视面板出货量的48％．或赶上快门式眼镜方案。尽管3D电视发展速度不如预期，但渗透率依然在稳定增长，今年出货的约30％的液晶电视面板将有3D能力。     

拒绝“闪烁” 创维E92RD酷开智能3D电视

观看3D电视时,主动快门式3D眼镜闪烁的问题一直让很多消费者所困扰,创维E92RD酷开智能3D电视采用偏光式3D技术,拥有不闪烁、高亮度、无重影、广视角、易佩戴等特点,让消费者可畅享3D带来的震撼效果。     

快门式3D液晶电视眼镜系统方案设计与实现

介绍以德州仪器(TI)半导体公司的MCU(Micro Control Unit)芯片为核心,设计了快门式3D液晶电视眼镜系统方案,详细介绍该快门式3D液晶电视眼镜系统方案的整体结构,各个模块电路的工作原理,方案关键元器件的选型,以及整体系统方案软件的设计与实现。     

国外最新热点影音动态回顾

索尼、松下、三星与X6D,组成3D眼镜标准化研究团队虽然3D显示功能已经逐渐成为平板电视与家庭影院投影机的标准配置,但是3D眼镜规格的不统一始终是限制3D显示设备进一步发展的主要因素之一。为此,全部采用X6D公司研发的XpanD主动式快门规格的三间全球显示设备巨头Sony(索尼)、Panasonic(松下)与Samsung(三星)日前宣布与X6D公司合作,开始研究标准化的全高清主动式快门3D眼镜规格,以后我们就不再需要担心不同厂商3D眼镜的使用匹配问题了。即便家中同时拥有索尼、松下与三星的3D电视,都无须担心因为眼镜不兼容而导致无法正常观看3D电视的问题了。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.