直线阵列数字波束形成技术

基于直线阵列天线体制,介绍了数字波束形成(Digital Beam Forming,DBF)技术的原理、系统组成和实现方法,给出了详细的公式推导,对数字波束形成的正交校正、通道一致性校正和波束形成等关键技术进行了描述,并说明了关键技术的有效解决方法。结合工程实践,提出用现场可编程门阵列(FPGA)和数字信号处理器(DSP)相结合的架构来完成数字波束形成板的实现方式,并对数字波束形成板的工作模式和工作流程做出了详细说明。所给出的理论和方法都是通过实践检验的,具有一定的实用性。     

基于确知波形的宽窄兼容数字波束形成方法

基于确知波形及其瞬时相位表达式，提出一种能够兼容宽带和窄带波形的数字波束形成方法，并通过融合数字接收和波束形成处理模块，大幅降低消耗的资源数量。仿真结果显示，该方法解决了宽带模式下波束指向偏移以及带宽增加导致合成波束峰值功率下降的问题。     

同时数字多波束技术实现雷达三坐标搜索

根据三坐标搜索雷达的特点,对频率扫描、堆积多波束、一维相扫、混合扫描和多波束等多种雷达体制进行论述,通过综合比较,最终确定了采用连续波同时数字多波束体制实现三坐标搜索雷达。阐述了数字多波束形成原理,给出了数字复用实现同时多波束的方法,论证了数字多波束形成的技术指标,详细分析了幅相校准关键技术。给出了连续波三坐标雷达的多波束实现方案,并通过实践检验,理论和方法具有实用性。     

时延、相移波束形成技术研究

分别对几种波束形成方法进行了讨论，其中重点讨论了采用数字内插与混合波束形成结合的多波束形成方法，并通过对几种波束形成的研究对比，以及各种参数的变化对波束形成质量的影响比较，来找到各种波束形成方法的优缺点及适用范围。对于数字波束形成来说，要达到一定精度就需要一定高度的采样率，而高的采样率会带来ADC和输入数据传输及存储器等硬件要求的提高和成本的增加。数字内插的使用，则可以在不提高输入信号采样频率的条件下，保证波束形成足够的精度。     

一种验证数字多波束形成的方向图测试法

针对工程实践中数字多波束形成方法的正确性不易验证,提出了一种基于方向图测试的数字多波束形成验证方法,模拟4个不同方位、俯仰的固定目标,利用天线对其进行方位、俯仰多层扫描,获取水平方向图和俯仰方向图.结果表明方向图测试法能够验证数字多波束偏移角度与权值系数的正确性,较好地解决了工程中数字多波束形成验证问题.     

基于FPGA的超宽带数字波束形成技术

随着高速ADC和高性能FPGA芯片工艺技术的飞速发展,芯片的小型化和集成化促进了电子战系统瞬时覆盖带宽由几十兆赫兹上升到几百兆赫兹甚至到吉赫兹量级,属于超宽带范畴.为了获得更远的探测距离性能,具备同时对多个辐射源侦测的能力,需要瞬时形成多个数字波束对目标区域密集覆盖.针对宽带时域校准与合成处理资源占用多、形成波束少的缺...     

发射数字多波束天线技术研究

介绍了数字波束形成和发射数字多波束技术的原理和实现方法,并对阵列天线的权值产生进行了论述。讨论了采用单波束叠加方法时波束之间的相互影响。给出了仿真结果以及对16单元直线阵发射数字多波束天线原理样机试验验证的测试结果。     

基于SOCP的同时数字多波束干扰技术研究

针对现有方法普遍存在的波束形成算法效率低,难以形成多频点、多方向的同时多波束干扰等缺点,本文提出了一种基于二阶锥规划(SOCP)理论的同时数字多波束干扰形成方法.首先,给出了在不同范数准则条件下干扰多波束优化设计问题的数学描述；然后,以L2范数准则为例,将干扰多波束设计问题的解析形式转化为相应的SOCP形式.最后,仿真结果表明该方法可以较好地解决相应约束条件下的多频率、多方向雷达目标同时多波束干扰优化设计问题.     

基于匹配处理的相控阵数字波束形成方法

在大孔径宽扫描角相控阵情况下,利用窄带相控阵不能形成宽带高分辨信号,提出一种基于匹配处理的宽带宽角相控阵数字波束形成方法。该方法采用时域数字处理,将宽带信号经匹配处理后变换到数字域,在窄带条件下进行数字波束形成。理论分析和仿真结果验证了其有效性。与实时延迟线波束形成方法和频域DFT波束形成方法相比,基于匹配处理的相控阵波束形成方法既不需要延时器和移相器,也不需要高速A／D转换器和高速数字信号处理,所需设备量少,易于工程实现。     

窄带系统数字波束成束原理与方法

较为系统地介绍了窄带系统数字波束成束的原理和方法,讨论了在已知目标/干扰指向和未知目标指向不同条件下,数字波束成束算法以及基于特征史问自适应算法的特点。最后列出了收、发多波束在基带形成的流程结构。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.