粒子对算法在图像矢量量化中的应用

本文给出了一种新的图像矢量量化码书的优化设计方法——粒子对算法.在传统粒子群优化(Particle Swarm Optimization,PSO)算法的基础上,用两个粒子构成了群体规模较小的粒子对,在码书空间中搜索最佳码书.在每次迭代运算中,粒子对按先后顺序执行PSO算法中的速度更新、位置更新操作和标准LBG算法,并用误差较大的训练矢量代替越界的码字.此算法避免粒子陷入局部最优码书,较准确地记录和估计每个码字的最佳移动方向和历史路径,在训练矢量密集区域和稀疏区域合理地分配码字,从而使整体码书向全局最优解靠近.实验结果表明,本算法始终稳定地取得显著优于FKM、FRLVQ、FRLVQ-FVQ算法的性能,较好地解决了矢量量化中初始码书影响优化结果的问题,且在计算时间和收敛速度方面有相当的优势.     

免疫粒子群改进LBG的孤立词语音识别算法研究

语音识别技术已在通信及控制等领域得到广泛应用,针对孤立词语音识别矢量量化中LBG算法对初始码书选择敏感,容易陷入局部最优、泛化能力不强的缺点,将免疫粒子群优化算法(IPSO)和LBG算法结合进行聚类分析,从而得到基于IPSO-LBG的码书设计方法,并将其用于基于离散隐马尔可夫模型(DHMM)的孤立词语音识别系统中。通过实验,与传统LBG算法的DHMM孤立词语音识别系统的识别结果相比,证明了改进的系统有较好的识别率和适应性。     

高效的模糊聚类初始码书生成算法

码书设计在矢量量化中至关重要,而多数码书设计算法都是基于初始码书的.从经典的LBG算法的缺陷出发,提出一种基于模糊聚类的高效初始码书生成算法,通过将初始码书的码矢在输入矢量空间中很好地散开,并尽可能占据输入概率密度较大的区域,从而使之后的LBG算法避免陷入局部最优,设计出的码书性能更好,更加接近全局最优,同时加快了收敛速度,减少了迭代次数.将该算法应用于图像编码的实验中,结果表明:该算法能够从效率和质量两方面有效地提高矢量量化的性能.     

基于微粒群的矢量量化码书设计算法

针对在LBG算法中存在初始码书的选择极易影响码书训练的收敛速度和最终码书性能的缺陷,提出了一种基于微粒群的矢量量化码书设计算法.首先产生具有一定全局性特点的初始码书,然后再应用LBG算法进行优化得到同时具有局部特性的码书.实验结果验证了该算法的合理性.     

语音LSF参数M-L搜索VQ算法研究

针对高效低速率语音编码,以LBG矢量量化码书设计算法为基础,研究了M-L搜索多级矢量量化(VQ)的码书设计算法和M-L搜索多级矢量量化编解码算法,同时对整个算法进行了全面的测试和性能分析。设计结果表明:该方法可有效提高LSF参数压缩的效率,改善谱失真指标。     

基于混合遗传算法的码书设计方法

将遗传算法与LBG算法相结合,得到了一种矢量量化码书设计算法.利用遗传算法的全局优化能力得到最优的矢量量化码书;同时,克服了传统遗传算法收敛速度慢的缺点.实验结果表明,文中提出的算法性能上优于LBG算法,且收敛速度较快.     

一种改进的基于Hadamard域的码书设计算法

基于Hadamard变换和K-means理论,针对Chen的初始码书设计算法的随机性较强和峰值信噪比(PSNR)不高这两个缺点,提出了一种改进的码书设计算法。本算法利用统计特征量的分类平均法生成初始码书,然后提高求质心的频率,每当一个训练矢量被分类到胞腔时,就求出相应胞腔的质心来代替原有的码字。该算法结合LBG算法的优点,调整后的码字代表了整个胞腔的特性,加速了码书的收敛速度,提升了码书的性能。仿真实验结果表明,较Chen的算法图像效果,即峰值信噪比(PSNR),平均提高了0.5 dB,在迭代次数较小时甚至达0.9 dB。     

基于改进禁止搜索算法的矢量量化码书设计

本文提出了基于改进禁止搜索(TS)算法的矢量量化(VQ)码书设计方法.禁止搜索算法的关键是如何定义一个解以及如何在当前解的基础上生成邻域解.由于码书设计的两个优化准则是最邻近条件和聚类质心条件,本文提出了两种禁止搜索算法的解描述方案,其相应算法分别叫基于码书的禁止搜索(CB-TS)算法和基于聚类划分的禁止搜索(PB-TS)算法.为了提高禁止搜索算法的性能,文中在禁止搜索算法中融入了模拟退火(SA)机制.为了进一步提高码书性能,文中还将码书设计的传统LBG算法融入禁止搜索算法中.结果表明,基于禁止搜索的两种码书设计方案所生成的码书性能都比LBG算法有明显提高.     

等误差原则在进化算法优化矢量量化中的应用

文中利用进化算法优化矢量量化器设计,在选择后代码书矢量时,利用等误差原则选择获胜后代码书矢量.算法采用LBG算法作为基本聚类算法,利用所选后代码矢调整相应区域的父代码矢,减小各区域子误差,改善总的期望误差.试验证明了此方法的有效性,解决了LBG算法局部最优的局限,获取更接近全局最优的码书.     

自适应矢量量化在语音识别中的应用

介绍了用离散隐马尔可夫模型(DHMM)构造孤立词语音识别系统中的特征向量矢量量化的码书构造过程。以往的矢量量化通常采用基本算法LBG,在此基础上,引入了一种时间复杂性和空间复杂性有所降低的改进算法。该算法的核心是自适应地生成初始码书以及对初始码书的二次构造过程。从降低时间复杂度和节省存储空间,提高识别率的角度,对该算法进行了讨论。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.