半导体激光器电噪声与非辐射复合电流的相关性

测量了50余只980 nm InGaAsP/InGaAs/AlGaAs双量子阱高功率半导体激光器的低频电噪声及其V-I特性。结果表明,小注入情况下,980 nm半导体激光器的低频电噪声主要表现为1/f特性,并与器件的表面非辐射复合电流有着良好的对应关系。     

半导体激光器低频噪声测试及参数提取

半导体激光器低频电噪声的大小受器件潜在缺陷的影响,与器件可靠性具有相关性。介绍了半导体激光器噪声测试及参数提取的原理,设计了基于超低噪声前置放大器和低频频谱分析仪的低频电噪声测试系统,可测量半导体激光器的低频电噪声并提取相关噪声参数,进而通过低频电噪声的研究对半导体激光器进行可靠性评价,具有灵敏度高、非破坏性等优点。     

低偏置电流下大功率半导体激光器低频电噪声特性

测量了大功率InGaAsP/GaAs量子阱半导体激光器在五十分之一阈值电流下的电压低频噪声功率谱密度.实验结果显示,激光器的低频电噪声呈现1/f噪声,在不同的偏置电流范围内,1/f噪声幅度随电流的变化关系不同,整体上随偏置电流的增大而减小,实验中并未发现g-r噪声.结合低偏置电流时激光器动态电阻的大小,给出了1/f噪声的模型,分析了在低偏置电流下的1/f噪声主要来自有源区和漏电电阻,其幅度的大小及其随偏置电流的变化趋势与激光器的可靠性有密切的关系.     

用于检测1/f电噪声的低噪声放大器设计与仿真

1/f低频电噪声是评估半导体器件质量和寿命的一个重要因素。由于1/f低频电噪声极其微弱,为了检测它,同时最大程度降低放大器的本底噪声,低噪声放大器的设计和实现是至关重要的一个环节。针对1/f低频电噪声信号的特性,在现有低噪声放大器基础上进行优化改进,设计出一款频率极低的低噪声放大器,在0.1 Hz~100 kHz频率下具有高增益和低噪声特性。仿真结果表明,在10Hz处噪声系数达到1.80 d B。     

半导体激光器的低频电噪声谱密度和器件的可靠性

本文给出了半导体激光器的低频电噪声谱密度和器件可靠性关系的实验结果。     

基于电子元器件低频噪声特性和相关测试技术

基于电子元器件低频噪声特性测试中,针对影响低频噪声测量系统准确性的因素,提出了一种改进型的低频噪声测量方法,优化设计电子元器件低频电噪声测试系统,放大噪声测试部分噪声,并可以分析电子元器件低频噪声测试过程中的低频噪声特性,从而可以有效证实通过测试低频噪声,就能够验证电子元器件质量是否缺陷,分析电子元器件的使用可靠性。在本文之中,将会基于电子元器件介绍其低频噪声特性和相关测试技术方案。     

光电反馈抑制掺铒光纤激光器的低频强度噪声

通过光电反馈电路对掺铒光纤激光器的中低频噪声进行了抑制。根据速率方程理论,分析了影响掺铒光纤激光器强度噪声的因素,通过电路仿真分析优化反馈电路参数,重点讨论反馈信号的相位对噪声抑制的影响。实验表明：激光器的低频(小于20KHz)强度噪声平均降低了10dB,中频弛豫振荡峰处（30KHz附近）抑制达35dB,并且克服了光电反馈抑制强度噪声使弛豫振荡峰向高频移动,导致高频噪声增大的问题。优异的噪声特性使光纤激光器在光传感领域具有很高的实用价值。     

DC/DC辐照损伤与VDMOS器件1/f噪声相关性研究

通过对DC/DC转换器低频噪声测试技术以及在γ辐照前后电性能与1/f噪声特性变化的对比分析,发现使用低频噪声表征DC/DC转换器的可靠性是对传统电参数表征方法的一种有效补充.对DC/DC转换器辐照损伤与其内部VDMOS器件1/f噪声相关性进行了研究,讨论了引起DC/DC转换器辐照失效的原因.     

太赫兹量子级联激光器光注入特性

基于三能级速率方程,研究了独立运行、主从注入和相互注入太赫兹量子级联激光器(THz-QCLs)的相对强度噪声和调制特性。在自由运行情况下,THz-QCL的自发辐射噪声在低频时表现出白噪声特性。与传统的半导体激光器不同,在低频区没有对应于弛豫振荡的共振峰。主从注入可以有效降低THz-QCLs噪声20 dB,提高THz-QCLs低噪声工作的效率。对于互注入THz-QCLs,即使在锁相区,噪声也明显高于自由运行情况。通过应用注入锁定方案,与直接调制方案相比,可以大大增加调制带宽。     

半导体抽运Nd:YAG激光器强度噪声抑制的研究

为了降低半导体抽运固体激光器的弛豫振荡噪声,提高其输出功率的稳定性,采用光电负反馈的方法来抑制半导体抽运的固体激光器的强度噪声,并对激光器强度噪声的理论特性进行了分析。根据理论分析结果设计了比例-积分-微分反馈控制电路,通过运用该反馈电路对激光器进行强度噪声抑制实验,得到了比较理想的实验数据,即当抽运功率为700mW、弛豫振荡峰频率为300kHz时,弛豫振荡峰值处和低频区域强度噪声分别降低了45dB和15dB;当抽运功率为550mW、弛豫振荡峰值为250kHz时,弛豫振荡峰值处和低频区域强度噪声分别降低了40dB和10dB。结果表明,该反馈控制电路能够有效地降低半导体抽运固体激光器的强度噪声,提高激光器输出功率的稳定性。     

Correlation of Electrical Noise with Non—radiative Current for High Power QWLs

The characteristics of low-frequency electrical noise, voltage-current (V-I) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers (DQWLs) are measured under different conditions.The correlation of the low-frequency electrical noise with surface non-radiative current of devices is discussed.The results indicate the low-frequency electrical noise of 980 nm DQWLs with high power is mainly 1/? noise and has good relation with the device surface current at low injection.     

The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current

The low-frequency electrical noise, voltage–current (V–I) and electrical derivative characteristics of 980 nm InGaAsP/InGaAs/GaAlAs high power double quantum well (DQW) lasers are measured at different conditions. The correlation between the low-frequency electrical noise and surface non-radiative current of devices is discussed. The results indicate that the low-frequency electrical noise of 980 nm high power DQW lasers is mainly 1/f noise and has good relation with the devices surface current at low injection.     

980nm波段连续光纤激光器的研究进展

980nm波段掺镱光纤激光器在高亮度抽运源和蓝绿光源方面具有广泛的应用前景。首先介绍了980nm波段连续光纤激光器的研究价值、研究难点。然后,介绍了国内外研究机构在980nm波段连续光纤激光器和放大器方面的研究进展和存在的问题。最后对980nm波段连续光纤激光器和放大器未来发展方向进行探讨。     

Monolithic multiple wavelength surface emitting laser arrays

A two-dimensional (2-D) surface emitting laser array emitting 140 unique, nonredundant, uniformly separated, single-mode wavelengths in the 980-nm regime is described. The wavelength separation between neighboring lasers is as small as 0.3 nm. A large total wavelength span of 43 nm was obtained without compromising the performance of the lasers. All 140 lasers have nearly the same threshold currents, voltages, and resistances. The techniques used are generic and can be readily extended to both longer and shorter wavelength lasers. The authors also report the first wavelength division multiplexing system experiment using part of this laser array. A BER (bit-error ratio) of 10 ^-9 at 155 Mb/s was obtained with simultaneous operation of four lasers at a wavelength separation of 1.5 nm. Negligible optical and electrical crosstalk was observed between the lasers     

高功率980nm非对称宽波导半导体激光器设计

设计了980nm非对称宽波导InGaAs/InGaAsP量子阱激光器,并在结构中插入电流阻挡层,有效地阻止载流子的泄露。用LASTIP软件对980nm非对称宽波导量子阱激光器进行理论模拟,与传统的980nm对称宽波导量子阱激光器相比,非对称宽波导量子阱激光器波导和量子阱之间有更小的能带差,非对称宽波导结构具有更低的阈值电流,更高的斜效率以及更低的阻抗,所以带有电流阻挡层的980nm非对称宽波导InGaAs/InGaAsP量子阱激光器有更高的光电转换效率和输出功率。     

980nm半导体激光器可靠性的研究现状分析

本文介绍了提高980nm半导体激光器可靠性的几种方案，并做了综合评述。进一步介绍了离子辅助镀膜技术在提高980nm激光器可靠性方面的应用。     

Characteristics of an erbium-doped fiber amplifier pumped by a frequency doubled diode-pumped Nd:YAG laser

The characteristics of an erbium-doped fiber amplifier pumped by a 532-nm diode-pumped Nd:YAG laser are presented. A maximum system gain of 31 dB at 591 Mb/s is obtained with a corresponding system noise of less than 0.5 dB. An amplified signal output power of greater than 10 mW was obtained, with a coupled pump power of 46 mW and a corresponding quantum efficiency of around 65%. By optimizing the erbium fiber design, higher system gains and saturation power levels are feasible. These figures, and in particular the combination of high output powers and low noise, establish the usefulness of this pump laser as a viable alternative to the semiconductor pump lasers currently under investigation at 1480 and 980 nm.<>     

Electrical mode-hopping noise in external-cavity semiconductor lasers and mode-hopping elimination by a nonoptical control loop

The longitudinal mode-hopping and the associated terminal electrical noise in AlGaAs buried heterostructure lasers in an external-cavity configuration are investigated. It is found that the electrical mode-hopping noise has a1/f-dependence when two external-cavity modes are involved in the mode-hopping. Furthermore, it is found that the optical feedback can suppress the electrical noise significantly below the noise level of the free-running laser. This corresponds to a reduction of the emission line width which is in agreement with the reduction of the electrical noise level. A novel, nonoptical, scheme for active elimination of mode-hopping attributable to thermal drift or mechanical disturbances in CW-operated external-cavity lasers is also proposed and demonstrated. Using this method, where the electrical noise is used as an error signal in a control loop, long-term single external-cavity mode operation and low electrical noise and optical intensity noise levels were maintained.     

半导体激光器输出波长随工作电流变化的实验研究

以2W连续红外(980nm)半导体激光器(InGaAs)和120mW连续红外(980nm,带制冷器与尾纤)半导体激光器(InGaAsP)为例,测量激光器输出光束的波长随工作电流变化的规律。实验结果表明:工作电流增加,光束波长向长波红移,斜率分别近似为0.374nm/100mA、0.220nm/10mA;工作电流大时的红移现象比电流小时明显。