浅低温不停跳心内直视手术体外循环436例分析

目的分析浅低温不停跳下心内直视手术体外循环病例选择及临床意义。方法对1999年3月-2009年5月期间436例简单先心浅低温不停跳下心内直视手术体外循环灌注情况进行回顾性研究。年龄≤12岁小儿组263例,年龄>12岁成人组173例,对两组患者体外循环中流量、压力、温度等情况进行比较。结果与成人比较,小儿灌注流量明显高于成人(P<0.01),平均动脉压明显低于成人(P<0.01);术中平均温度和转机时间两组无统计学差异(P>0.05)。436例患者术后均痊愈出院。结论体外循环下心脏不停跳心内直视手术,对于简单先心病患者是安全可靠的。     

小儿先心病中EEG和RAEP的临床评价

目的 :评价先心病儿脑电图 (EEG)、脑干听觉诱发电位 (BAEP)的变化。方法 :对 3 0例先心病儿童EEG、BAEP的变化进行对比观察 ,并以 3 0名健康儿童为对照组。结果 :1.EEG :发绀组 (CCHD)异常率为 80 %( 8/ 10 ) ,非发绀组 (NCCHD)异常率为 3 0 %( 6/ 2 0 ) ,差异显著 (P <0 .0 5 )。2 .BAEP :CCHD组异常率为 10 0 %( 10 / 10 ) ,NCCHD异常率为 65 %( 13 / 2 0 ) ,差异显著 (P<0 .0 5 ) ,Ⅴ波潜伏期 (PL)、Ⅲ -Ⅴ、Ⅰ -Ⅴ波峰间潜伏期 (IPL)先心病患儿与对照组比较 ,CCHD组显著延长 (P <0 .0 5 )。 3 .EEG与BAEP :EEG异常者BAEP均异常 ( 10 0 %) ,EEG正常者BAEP有 5 6.3 %异常。结论 :1、先心病患儿伴有脑功能异常 ,CCHD较NCCHD显著。 2、EEG与BAEP均可反映脑功能异常改变 ,但非完全同步 ,BAEP似乎较为敏感。     

60Co放疗对鼻咽癌患者中耳功能的影响

目的 :研究放射治疗对鼻咽癌患者中耳功能的影响。方法 :5 0例鼻咽癌患者接受放疗前、放疗后 1年、放疗后 2年听力及中耳功能检测。结果 :中耳压力 :放疗前 (- 78± 6 9)dapa,放疗后一年为 (- 193± 98)dapa,放疗后 2年为 (- 12 2± 84)dapa(p <0 .0 1)。声顺值 :放疗前 (- 0 .98± 0 .6 7)ml,放疗后一年下降为 (0 .5 6± 0 .74)ml,放疗后两年 (0 .73± 0 .6 9)ml(p <0 .0 1)。放疗后中耳病变及耳聋比例增加 (P <0 .0 1)。结论 :放疗可造成中耳及耳蜗功能损害 ,加重鼻咽癌患者耳聋发生。     

采用电脑激光肾病治疗仪治疗慢性肾炎及慢性肾功能不全的临床疗效观察

电脑激光肾病治疗仪与常规药物治疗结合 ,治疗慢性肾小球肾炎、肾病综合征、慢性肾功能不全 ,共 30例 ;并与单用常规药物治疗对照。结果 :慢性肾小球肾炎组 ,2 4小时尿蛋白由治疗前的 1.34± 0 .82 g/日 ,下降至0 .85± 0 .61g/日 ,与对照组相比 ,有显著性差异 ( P<0 .0 5) ;治疗组 2 4小时尿量由治疗前的 184 6.67± 356.69ml/日 ,增加至 2 0 78.33± 4 30 .0 5ml/日 ,与对照组相比 ,有显著性差异 ( P<0 .0 5)。提示 :该治疗仪对肾小球肾炎等慢性肾病有一定疗效     

关节镜下Inside-out缝合法修复半月板横行损伤

目的评价关节镜下Inside-out缝合法修复半月板横行损伤的疗效。方法回顾性分析关节镜下Inside-out缝合法修复半月板横行损伤36例(37膝),其中男26例(27膝),女10例,年龄14-55(29.5±11.1)岁;外侧23例(24膝),内侧13例;合并ACL损伤12例。术前及术后采用Lysholm评分系统评定膝关节功能。结果术后随访时间2-52(21.1±17.1)个月,无血管、神经损伤及感染等并发症发生。Lysholm评分:术前(31.1±6.3)分,术后(85.2±6.9)分(P<0.001),优良率91.9%。结论Inside-out缝合法对修复横行半月板损伤是一种操作简便、安全有效的手术方法。     

支架连接代替血管吻合建立大鼠肾移植模型

目的探讨抗淋巴细胞血清(ALS)联合他克莫司(FK506)在诱导大鼠肾脏移植免疫耐受中的作用。方法以SD大鼠作为供体,Wistar大鼠作为受体,建立大鼠肾移植模型。对照组(A组)仅行肾移植,术前术后未予免疫干预;ALS组(B组)术后当天腹腔注射ALS,连续应用至术后第10天;FK506组(C组)术后当天开始应用FK506,连续应用至术后第10天;联合组(D组)联合应用ALS与FK506。术后观测各组受者存活时间、移植肾功能、移植肾血供、免疫耐受状态等。结果D组平均存活时间为(37.0±5.3)d,与A组(7.4±1.6)d、B组(16.3±4.7)d及C组(17.5±5.3)d比较,差异均有统计学意义(P<0.05);手术后1周检查A组移植肾血供差,平均肾血管阻力指数0.80±0.06;B组和C组移植肾血供良好,平均阻力指数分别为0.62±0.07、0.63±0.08;D组移植肾血供良好,术后1周与术后20d平均阻力指数分别为0.61±0.04、0.62±0.03;D组与A组相比较差异有统计学意义(P<0.05)。结论ALS联合FK506能够延长受者存活时间和促进免疫耐受的诱导。     

FK506和环孢素A抗肾移植排斥反应的疗效观察及护理

1　对象和方法1999年 8月至 2 0 0 1年 4月 ,肾移植术前监测血糖、肝功能正常 ,肾移植术后服用FK5 0 6抗排斥治疗 34例 ,肾移植术后服用CsA抗排斥治疗 38例 ,其中男性 4 0例 ,女性 32例 ,年龄 19～ 6 5岁 ,平均 35 .2± 7.1岁。供受者组织配型良好 ,群体反应性抗体阴性 ,淋巴细胞毒性试验 ,<10 % ,供肾热缺血时间 3～ 17min ,平均 10 .4± 2 .9min ,供肾冷缺血时间 6～ 2 0小时 ,平均 7.5± 3.5小时。两组病例在年龄、性别、原发疾病、组织配型、群体反应性抗体、淋巴细胞毒性试验、冷 /热缺血时间、术式、术后辅助治疗方面差异均无显著性…     

光纤主干传输工程建设对光缆的要求

1　光缆的技术要求1.1　光缆的光学特性要求(1)模场直径 (1310ｎｍ波长 ) :(9.3± 0 .5 ) μｍ(2 )包层直径 :(12 5± 2 ) μｍ(3)芯 /包层同心度偏差 :<1μｍ(4)光纤截止波长λ :1180～ 132 0ｎｍ(5 )光缆截止波长λ :<12 70ｎｍ(6 )成缆后光纤衰减系数 :1310ｎｍ波长的衰减系数 <0 .36ｄＢ/ｋｍ ,12 85～ 1330ｎｍ波长范围内 ,任一波长的衰减系数与 1310ｎｍ波长的衰减系数相比 ,其差值不超过 0 .0 3ｄＢ/ｋｍ ;15 5 0ｎｍ波长的衰减系数<0 .2 2ｄＢ/ｋｍ ,1480～ 15 80ｎｍ波长的范围内 ,任一波长的衰减系数与 15 5 0ｎｍ波长的衰减系数…     

自聚焦共焦式微小内腔体探测技术

系统用自聚焦透镜代替共焦扫描显微镜中的聚焦透镜 ,将自聚焦透镜体积小的特点与共焦显微技术的轴向高分辨力和绝对位置跟踪特性有机结合 ,具有测头微小型化 ,高的轴向分辨力、较大倾斜表面的瞄准能力、对突跳位置的绝对跟踪能力等特点。选用PZT作为轴向扫描驱动元件 (线性范围± 5 μm ,每个脉冲 2nm进给 ) ,用高精度电容位移传感器作为位置跟踪元件 (线性范围± 5 μm ,分辨力 1nm)。对 2 0°角度块进行测试实验表明 ,在测头直径为 1mm的情况下 ,系统对 2 0°倾斜度以内的斜面轮廓的探测轴向分辨力可达 10nm。     

光动力作用对人膀胱癌细胞株BIU-87增殖代谢活性的影响

目的 :研究光动力抑癌作用机制。方法 :采用MTT法检测光动力作用后人膀胱癌细胞株BIU -87增殖代谢活性。结果 :光动力实验组吸光密度值 (0 .1683± 0 .0 3 3 7)显著低于实验对照组 (0 .5 12 8± 0 .0 3 82、0 .7775± 0 .0 93 2、0 .72 2 3± 0 .0 3 5 5、0 .72 10± 0 .0 3 69) (P <0 .0 1)。结论 :光动力作用降低了人膀胱癌细胞株BIU -87的增殖代谢活性 ,这可能是其抑癌作用机制之一。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.