工作气压对室温溅射柔性AZO薄膜性能的影响

采用射频磁控溅射法在PEN衬底上室温制备了AZO薄膜,并对不同工作气压下(0.05～0.4Pa)沉积薄膜的结构及光电性能进行了研究。结果表明,薄膜具有良好的c轴择优取向,随工作气压增大,薄膜(002)峰强度减弱,晶粒减小,表面粗糙度增大,电学性能下降,薄膜可见光透过率变化不大,但禁带宽度变窄。与玻璃衬底相比,PEN衬底上沉积的AZO薄膜拥有更高的品质因数,获得的最佳电阻率、载流子浓度和霍尔迁移率分别为1.11×10-3Ω.cm、4.14×1020cm-3和13.60cm2/(V.s),该薄膜可见光的绝对透射率达到95.7%。     

掺钼氧化锌透明导电薄膜光学性质研究

采用直流磁控反应溅射制备了掺钼氧化锌透明导电薄膜。研究了掺钼氧化锌薄膜的结构、表面形貌及其光学和电学性能。原子力显微镜扫描显示薄膜表面较为平整致密。制备出的掺钼氧化锌薄膜最低电阻率为9.4×10-4Ω.cm,相应载流子迁移率为27.3cm2V-1s-1,载流子浓度为3.1×1020cm-3。在可见光区域的平均透射率大于85%,折射率(550nm)为1.853,消光系数为7.0×10-3。通过调节氧分压可以调节薄膜载流子浓度,禁带宽度随载流子浓度的增加由3.37增大到3.8eV,薄膜的载流子有效质量m*为0.33倍的电子质量。     

射频磁控溅射法制备的ZnO:Al薄膜在不同偏压下的光电特性

采用RF磁控溅射法在玻璃衬底和PET衬底上沉积了Al掺杂的ZnO(AZO)薄膜,衬底的直流偏压为0～50V.主要研究了薄膜的结构、光学和电学特性.在玻璃衬底上制备AZO薄膜的沉积速率随偏压的升高而增大,然而再增加偏压时反而下降.当偏压为30V时,在玻璃衬底上制备的薄膜的最低电阻率为6.5×10-4Ω·cm,在波长450～800nm内的平均透射率大于80%;在PET衬底上制备的薄膜也有相似的特性,但没有在玻璃衬底上制备的好.     

In_2O_3：W薄膜的制备及光电性能研究

采用直流磁控溅射法制备了掺钨氧化铟（In2O3：W,IWO）薄膜,研究了制备工艺对薄膜表面形貌和光电性能的影响。结果表明薄膜的表面形貌与其光电性能有着紧密联系。氧分压显著影响薄膜的表面形貌进而对薄膜的光电性能产生影响,同时溅射时间的变化也显著影响薄膜的光电性能：随着氧分压以及溅射时间的升高,薄膜的电阻率均呈现先减小后增大的变化规律,在氧分压为2.4×10-1Pa条件下,制备样品的表面晶粒排布最细密,其电阻率达到6.3×10-4Ω.cm,载流子浓度为2.9×1020cm-3,载流子迁移率为34cm2/（V.s）,可见光平均透射率约为85%,近红外光平均透射率〉80%。     

直流磁控溅射制备大面积AZO透明导电薄膜

采用直流磁控溅射工艺于200℃的玻璃基板制备了大面积AZO透明导电薄膜。重点研究了样品晶体结构、方阻、可见光透过率、样品形貌等随其位置变化的情况。研究表明,大面积AZO薄膜的晶体结构、可见光透过率、样品形貌等随样品位置变化比较小,大面积AZO样品均按C轴取向生长,表面平整,晶粒尺寸为20 nm左右。在本实验条件下获得的大面积AZO薄膜方阻在86～110Ω/□范围内,方阻线性变动率为28%,样品电阻率为6.34～7.26×10-4Ω·cm,可见光平均透过率均高于87%。     

气相沉积硅薄膜微结构及悬挂键缺陷研究

在单晶Si(100)基体上利用电子回旋共振等离子体增强化学气相沉积法制备硅薄膜,并采用X射线衍射谱(XRD)、透射电镜(TEM)、Raman光谱、电子自旋共振(ESR)波谱等实验方法研究了不同Ar流量下硅薄膜微结构及悬挂键密度的变化。XRD及TEM实验结果得出,制备的硅薄膜的晶粒尺寸为12~16 nm,属纳晶硅薄膜。薄膜结晶度随镀膜时Ar流量增大而增大,而悬挂键密度则先迅速减小而后缓慢增大。当Ar流量为70 ml/min(标准状态)时,薄膜的悬挂键密度达到最低值4.42×1016cm-3。得出最佳Ar流量值为70 ml/min。     

直流磁控溅射工艺参数对掺钨氧化铟透明导电薄膜性能影响的研究

采用直流磁控溅射法制备了掺钨氧化铟(IWO)透明导电薄膜。研究了薄膜结构、表面形貌、光学和电学性能与各种制备参数之间的依赖关系。X射线衍射(XRD)谱分析结果表明随着基底温度的升高,薄膜的结晶性得到改善。原子力显微镜(AFM)测试结果表明薄膜颗粒均匀,表面平整。研究发现薄膜的电学性能对制备参数非常敏感。在基板温度为380℃的条件下所制备的样品在可见光区域(400~700 nm)的平均透射率(未扣除基底)均大于80%。获得的IWO薄膜最低电阻率为2.8×10-4 ohm.cm,对应载流子迁移率49 cm2V-1s-1,载流子浓度4.4×1020 cm-3,平均透射率83%。     

氧化铟薄膜制备及其特性研究

采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜,通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应,研究了氧化铟薄膜的结构和光、电特性.实验发现,氧化铟薄膜表面粗糙度随着生长温度的升高而增大.X射线衍射结果表明薄膜为立方结构的多晶体,并且随着生长温度的升高,可以看到氧化铟薄膜的晶粒变大以及半高宽减小,这也说明结晶质量的改善.在可见光范围的透射率超过90%.同时,在氩气氛围下制备的薄膜迁移率最大,其电阻率、霍尔迁移率和电子浓度分别达到了0.31Ω.cm、9.69 cm2/(V.s)和1×1018cm-3.退火处理可以改善氩氧氛围下制备的薄膜的电学性能.     

衬底温度和氢气退火对ZnO:Al薄膜性能的影响

采用射频磁控溅射法在石英玻璃衬底上制备了性能良好的透明导电ZnO:Al薄膜,并研究了衬底温度和氢气退火对薄膜结构和光电性能的影响。结果表明,衬底加热可以改善薄膜结晶质量和c轴择优取向,减小内应力,并提高其电学性能。经稀释氢气退火后,500℃沉积的薄膜电阻率由9.4×10-4Ω.cm减小到5.1×10-4Ω.cm,迁移率由16.4cm2.V-1.s-1增大到23.3 cm2.V-1.s-1,载流子浓度由4.1×1020cm-3提高到5.2×1020cm-3,薄膜的可见光区平均透射率仍达85%以上。禁带宽度随着衬底温度的升高和氢气退火而展宽。     

Al-Sn共掺杂ZnO薄膜的结构与光电性能研究

采用射频磁控共溅射法在玻璃衬底上制备出了Al与Sn共掺杂的ZnO(ATZO)薄膜.在固定ZnO∶Al(AZO)靶溅射功率不变的条件下,研究了Sn靶溅射功率对ATZO薄膜的结晶质量、表面形貌、电学和光学性能的影响.结果表明,制备的ATZO薄膜是六角纤锌矿结构的多晶薄膜,具有c轴择优取向,而且表面致密均匀.当Sn溅射功率为5W时,330 nm厚度的ATZO薄膜的电阻率最小为1.49×10-3 Ω·cm,比AZO薄膜下降了22％.ATZO薄膜在400～900 nm波段的平均透过率为88.92％,禁带宽度约为3.62 eV.     

室温下射频磁控溅射制备ZnO:Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO:Al2O3(2%Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO:Al(AZO)薄膜。使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响。结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大。当功率为1kW、溅射气压0.052Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550nm处透过率为89%,接近基底的本底透过率92%。当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4Ω·cm)。     

Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

Aluminum doped zinc oxide (AZO) thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density (Ji). The enhanced plasma density improved significantly the bulk resistivity (ρ) and its homogeneity in spatial distribution of AZO films. X-ray diffraction (XRD) analysis revealed that the increased Ji had inuenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density (LPD) mode showed marked variation in ρ (ranging from ～6.5×10?2 to 1.9×10-3 ·cm), whereas those deposited in high plasma density (HPD) mode showed a better homogeneity of films resistivity (ranging from ～1.3×10?3 to 3.3×10?3 ?·cm) at di?erent substrate positions. The average visible transmittance in the wavelength range of 500-800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy (AFM) surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.     

Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 :F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.     

绒面AZO干法制备及性能研究

利用射频溅射方法,制得AZO透明导电膜,并用离子束刻蚀制备绒面,得到绒面AZO透明导电膜。比较刻蚀前后光电性能及表面形貌,发现透过率稍有下降,在可见光波段透过率在80%以上;电阻率略有上升,但仍保持在10-3?·cm数量级,最低为2.91×10-3?·cm;刻蚀后薄膜表面形貌变化较大,大多数薄膜表面呈现"坑状"结构,横向尺寸在0.5?1.0μm,开口角在120°左右,表面粗糙度从7.29nm上升到36.64nm。薄膜具有较好的表面微结构,在作太阳能电池前电极方面有较好的应用前景。     

室温下高速沉积AZO薄膜的研究

在室温下,采用射频磁控溅射技术以较大的功率密度(7W/cm2)沉积了一系列掺铝氧化锌(AZO)透明导电薄膜,探索了溅射压强对沉积速率及薄膜性能的影响。结果表明,当工作压强为2.0Pa时,高速(67nm/min)沉积得到的薄膜的电阻率为2.63×10-3Ω.cm,可见光平均透过率为83%,并且在薄膜表面有一定的织构。     

高光学质量Yb:YAG透明陶瓷的制备及激光参数研究

以高纯Y₂O₃, α-Al₂O₃, Yb₂O₃粉体作为原料, 采用固相反应和真空烧结法(1750 ℃, 30 h)制备了高光学质量的Yb:YAG透明陶瓷。5.0at% Yb:YAG陶瓷中Yb ³⁺的实测浓度为6.41×10 ²⁰ cm ^-3, 晶胞密度为4.65 g/cm ³。本工作重点研究了Yb:YAG陶瓷的显微结构、光谱特性和激光性能参数。场发射扫描电镜(FESEM)结果表明, Yb:YAG陶瓷的结构均匀致密、晶界干净平直, 平均晶粒尺寸为(19±3) μm。该陶瓷样品(厚度为4.0 mm)在400 nm处的直线透过率为82.5%, 在1100 nm处的透过率为85.2%。泵浦波长940 nm处的泵浦饱和光强最小, 激光波长1030 nm处的泵浦阈值功率最低, 940 nm泵浦1030 nm激光的品质因子为1.02×10 ^-22 cm·s。通过计算增益截面表明Yb:YAG陶瓷宽带可调谐, 是理想的激光增益材料。     

Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

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PET纤维基AZO透明导电薄膜溅射工艺参数的优化

室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜.采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析.实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm.     

Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering

Cost efficient and large area deposition of superior quality Al₂O₃ doped zinc oxide (AZO) films is instrumental in many of its applications, including solar cell fabrication due to its numerous advantages over indium tin oxide (ITO) films. In this study, AZO films were prepared by a highly efficient rotating cylindrical direct current (DC) magnetron sputtering system using an AZO target, which has a target material utilization above 80%, on glass substrates in argon (Ar) ambient. A detailed analysis on the electrical, optical, and structural characteristics of AZO thin films was performed for the solar cell, as well as display applications. The properties of films were found to critically depend on deposition parameters, such as sputtering power, substrate temperature, working pressure, and film thickness. A low resistivity of ~ 5.5 × 10^− 4 Ω cm was obtained for films deposited at 2 kW, keeping the pressure, substrate temperature and thickness constant at 3 mTorr, 230 °C and ~ 1000 nm respectively. This was due to an increase in carrier mobility and large grain size. Mobility is found to be controlled by ionized impurity scattering within the grains, since the mean free path of carriers is much smaller than the grain size of the films. The AZO films showed a high transparency of ~ 90% in the long wavelength region. Our results offer a cost-efficient AZO film deposition method that can fabricate films with significant low resistivity and high transmittance that can be applied in thin-film solar cells, as well as thin film transistor (TFT) and non-volatile memory (NVM).     

透明导电InSnGaMo氧化物薄膜光电性能研究

利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。