基于并行MLFMA的SAR舰船目标RCS计算

为提高合成孔径雷达（SAR）图像仿真效果,针对SAR图像中舰船目标雷达散射截面（RCS）计算的精度和效率问题,在利用几何建模方法构建三维舰船模型的基础上,采用并行多层快速多极子算法（MLFMA）计算了舰船目标RCS并分析了该算法的并行加速比。仿真实验表明,并行MLFMA算法适用于高频范围内较大尺寸舰船目标RCS的计算,比物理光学法（PO）和物理光学与矩量混合算法（PO—MOM）具有更高的计算精度且并行方案能明显提高求解目标RCS的效率。     

一种用于雷达模拟器的RCS时间谱模型

目标特性中的反射截面积是影响模拟器回波质量的关键因素之一。在以往的雷达模拟器中，RCS起伏量多数采用符合分布的统计模型方法，此方法依据分布模型产生一组随机数，虽然可以快速产生RCS值，但没有反映真实的RCS变化情况。根据目标周围的电磁场分布特性计算RCS的方法，模型复杂，计算耗时，难以达到模拟器实时的要求。文中探讨一种RCS的时间谱模型，它依据模拟器前端所产生的航迹数据，经过目标坐标系与雷达坐标系的变换，即可得到RCS随时间起伏的模型。该方法由于利用了模拟器的航迹数据，使模拟器的系统性更加明显，具有一定的可信度。同时，其计算量较小，完全满足模拟器实时计算的需要。经过仿真实验和“防空兵雷达虚拟空情保障系统”的应用，证明方法确实可行。     

飞翼无人机多形翼尖P频段RCS特性及影响分析

全机隐身特性是先进无人机（Unmanned Aerial Vehicle,UAV）最为重要的设计目标之一。为探究不同翼尖形状对飞翼无人机P频段电磁散射特性的影响,对典型飞翼无人机翼尖进行多切面建模。采用高精度多层快速多极子方法（Multilevel Fast Multiple Algorithm,MLFMA）分析了不同翼尖方案下飞翼无人机全机在P频段雷达散射截面（Radar Cross Section,RCS）随迎角的变化,设计出优选方案,并进一步分析了优选方案下不同切割位置对整机前向平均RCS的影响。结果表明,在参考线15%处的直切翼尖方案具有最优的P频段电磁散射特性。     

混合ACA和MLFMA方法计算复合目标电磁散射

采用矩量法(MoM)计算电大尺寸的复合目标的电磁散射。为了能够高效快速地计算电大尺寸三维复合目标的电磁散射,提出一种新的混合方法,将自适应交叉近似(ACA)算法和多层快速多级子(MLFMA)算法相结合,共同加速矩量法的计算。其中,MLFMA用于加速目标与自身的作用,ACA用于加速目标与其他目标的相互作用。提出的混合算法在计算复合目标电磁散射时,可降低运算存储,缩短阻抗矩阵填充时间,并且能够加快矩阵矢量乘,且不影响计算精确度。数值算例表明,所提快速算法能够在保证电磁散射计算精确度前提下,比传统方法更高效。     

基于动态RCS的典型飞机目标识别

工程上常用静态雷达散射截面（RCS）统计特性进行目标识别,但其可分测度小,正确识别率较低。文中在精确获取目标动态RCS序列的基础上,提出了一种基于离散小波能量的特征提取方法,对典型飞机目标进行分类识别。首先,根据空气动力学和运动学方程设定五种典型飞机目标的飞行航迹并解算其实时飞行坐标,从而获取时变的雷达视线姿态角;其次,应用多层快速多极子电磁计算方法仿真各型目标的动态RCS数据;然后,再基于动态RCS序列,计算其位置、分布等统计特征,并进行小波分解和重构,提取各型目标的统计特征和小波能量特征;最后,采用基于距离的类间距离判据,比较两种特征量的分类识别效果。仿真计算结果表明：相对传统的统计特征,离散小波能量特征能完整地体现目标的特征,且可分性测度更大,识别效果更为理想。     

NURBS曲面建模的电大目标的宽带RCS快速计算

该文采用物理光学方法(PO),快速计算了非均匀有理B样条 (NURBS) 曲面建模的电大目标的时域瞬态散射和宽带雷达截面(RCS)。通过对频域物理光学散射场表达式进行逆傅里叶变换推导出卷积形式的瞬态散射表达式;对频域物理光学积分进行逆傅里叶变换得到时域物理光学积分的表达式。为了避免数值积分的使用,将NURBS曲面等参数离散为一组三角面片,运用Radon变换得到了时域和频域物理光学积分的精确闭式表达式。遮挡消隐时使用改进的z-buffer方法进行了加速。对时域瞬态散射场快速傅里叶变换得到目标的宽带RCS。文中计算了高斯脉冲平面波入射下模型的瞬态散射响应和宽带RCS,数值结果表明该文方法具有很高的计算精度,且计算速度快于传统时域物理光学法(TDPO)。     

基于双层ACA算法快速求解单站RCS问题

利用积分方程法计算三维目标单站RCS时,需要逐个角度地进行矩阵方程的求解。为了提高计算效率,本文采用自适应交叉近似算法(ACA)对多角度照射时生成的激励矩阵进行低秩压缩,减少了矩阵方程的求解次数;进一步基于单站角度上的分组方式提出了双层ACA算法,该算法对内存占用极小,提高了算法的并行性,而且更有效地实现了激励矩阵的降秩;最后结合多层快速多极子算法(MLFMA)实现电大尺寸目标的快速求解。数值计算结果表明,该算法能大幅减少大宽角条件下的单站RCS计算时间,具有较高的计算精度和计算效率。     

用于分析电磁散射问题的快速多极算法

介绍了用于分析电磁散射问题的快速多极算法(FMA)和多层快速多极算法(MLFMA)的基本思想与基本步骤。通过计算实例表明,快速多极算法在计算速度和存贮要求方面比矩量法有明显优势,适合于在现有计算机条件下求解电大尺寸目标的散射问题。     

一种基于FDTD的目标双站RCS计算方法及其应用

提出了一种基于FDTD方法的双站RCS计算方法即瞬态外推时谐场的离散傅立叶变换方法。此法不仅为工程应用提供方便,而且节约了计算时间、提高了计算的精度;文中针对FDTD复杂目标建模给出了一种基于3ds max的建模方法,这种建模方法可以对复杂目标实现快速、准确、可视化建模。运用上述方法,计算了典型目标和复杂目标双站RCS。算例结果表明,该方法是可行的。     

三维导体介质复合结构电磁辐射与散射的MLFMA分析

利用多层快速多极子方法(MLFMA)分析三维导体介质复合结构的电磁辐射与散射特性.根据等效原理,介质表面构造Poggio-Miller-Chang-Harrington-Wu(PMCHW)方程,导体表面建立电场积分方程(EFIE).分析了含介质目标MLFMA算法中远区组矩阵矢量相乘运算以及有耗媒质空间中格林函数的平面波展开.利用该方法研究了涂敷目标电磁散射特性以及天线罩对直线阵天线辐射特性的影响.MLFMA的应用降低了计算量和存储量,实现了对电大尺寸目标快速、准确的求解.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.