支持容侵的安全群组通信系统体系结构的研究

本文对入侵容忍的模型和TTCB结构进行了分析，在MAFTIA节点基础上，增加了一个事件处理引擎的核心模块，使得节点在参与者层与站点层支持自由选择安全群组通信系统中的密钥协商协议和新的加密算法。以改进的MAFTIA节点为基本单元。构建了基于可信实时计算基的新型安全群组系统。该系统能够集成新的安全群组通信密钥协商协议，通过事件处理引擎模块完成群组通信安全的任务，在安全性能方面更为灵活，具有较好的可扩展性与容忍入侵能力。     

将一个IRPKE方案改为IRIBE方案的方法研究

假定解密密钥绝对安全是传统加密方案安全性的必要前提。但是,在众多应用场景下解密密钥通常是无法保证绝对安全的。于是,许多密码专家都对入侵容忍加密方案进行了大量研究。通过对一个入侵容忍公钥加密(IRPKE)方案公钥分发机制的研究,提出了一种将IRPKE改为入侵容忍基于身份加密方案(IRIBE)的方法,在不改变原IRPKE方案的安全特性的情况下,解决了系统新增用户时公钥分发困难的问题,更好地满足了信息孤岛间交换信息的密码应用需求。     

密钥管理系统的入侵容忍设计

本文概要介绍了入侵容忍技术的特点、原理、应用现状和发展趋势,并具体分析了如何采用入侵容忍技术实现高生存强度的密钥管理系统。     

基于角色访问控制的入侵容忍机制研究

系统在受到入侵的情况下,如何仍能为用户提供规定的服务成为了当前网络安全技术中的一个重要问题.该文结合入侵容忍和基于角色的访问控制技术的特点,提出了一种基于角色访问控制的入侵容忍安全架构,给出了它的模型和基本组成.在网络分布式计算环境中,采用基于角色的访问控制技术的策略,从角色管理服务器、角色冒充、数据和应用服务器四个方面阐述了该架构的容侵机制,从而保证服务系统的安全性和可用性,实现整个系统的入侵容忍.     

入侵容忍数据库系统中选举方案的设计与实现

文章介绍入侵容忍数据库系统中选举方案的设计与实现，从入侵容忍的理论入手，论述了一种入侵容忍的数据库系统的设计方案和在该系统中进行选举的实现过程。     

一种具有自律特征的入侵容忍系统模型

针对当前入侵容忍系统缺乏自律性的问题,提出一种基于自律计算的入侵容忍系统模型.系统模型关键模块涵盖了入侵行为的检测评估、自律管理者的自主学习与自律容侵中心的容侵措施;同时通过检测评估中心构建进程危险函数,产生入侵行为的危险函数值,由自律管理者动态比较和调整危险函数值与入侵阈值的关系,实现了对入侵行为的自律容忍.最后通过实验分析了系统对入侵行为的自律容侵过程.     

一种入侵容忍系统的研究与实现

在信息系统存在入侵时,入侵容忍技术能够最大限度保障关键服务的运行。提出一种自适应容侵系统的体系结构,在节点和系统两个级别上实现入侵容忍,并研究攻击在线诊断及重定向技术,增强系统抵抗攻击的能力。实验结果表明,能够构建具有入侵容忍能力的连续服务系统,并能够在对响应时间要求不太严格但要求不间断运行的系统中得到应用。     

基于自适应入侵容忍的数据库安全体系结构

针对入侵容忍数据库系统中自适应能力较差的问题,提出了一种基于自适应入侵容忍的数据库安全体系结构。该结构采用了自适应重构技术和事务级入侵容忍技术,使系统即使在遭受到恶意攻击的情况下仍能提供自我稳定水平的数据的完整性和可用性,同时也降低了安全成本。     

基于入侵容忍的组播密钥管理研究

论文基于入侵容忍的组播协议所采用的秘密共享机制,对组播的结构进行了一定的改进,使得在组播成员的变动过程中,安全性得到了提高,降低了密钥更新的次数,节约了网络资源和系统资源。     

基于非确定有穷自动机的网络入侵容忍系统研究

入侵容忍技术是继防火墙、存取控制、入侵检测技术之后的网络信息安全技术。当一个网络系统遭受非法入侵后，入侵容忍系统仍能厦时自我诊断、恢复和重构，并能为合法用户提供所需的全部或者降级的服务。本文依据非确定性有穷自动机理论，模拟计算机受到攻击时入侵容忍系统的工作过程，为入侵容忍技术的发展提供了一种方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.