一种内嵌于DSP2F0X的ECAN设计及其通讯系统实现

通过对ECAN 2.0协议的深入研究,通过发送状态机以及过滤状态机实现消息的传输,完成了ECAN模块的核心逻辑设计,并通过APB总线将ECAN内嵌于DSP2F0X上,完成了ECAN的ASIC电路设计及其通讯系统的实现。主要介绍了该系统的硬件模块、连接结构和实现通信的基本配置及自检测试程序的设计。该系统的硬件实现使用verilog语言描述,采用了tcbn55lpwc工艺,在Synopsys/syn14.12环境下综合,信号传输速率最高可达1 Mb/s能力。实验结果表明,该系统完全满足CAN总线通信要求,与以往基于单片机的CAN总线通信系统相比较,具有更高的通讯效率及可靠性,同时功能也更加完备。     

CAN总线智能检测仪的设计与实现

由于通信速率高,实时性好,可扩展性强,近年来CAN总线已经广泛应用于智能通信网络中。为了满足CAN总线通信速率与故障检测的要求,设计了一款CAN总线智能检测仪。系统硬件平台以AT91sAM7A3为核心,包括CAN模块、CAN接口、时钟芯片、SD卡以及上位机。系统软件设计中进行了CAN总线自动位速率跟踪关键技术设计,并用C#设计了上位机人机界面。通过测试表明,该检测仪具有较高的可靠性、稳定性和可扩展性。     

基于TMS570高安全通用总线接口模块设计

为了提高航电系统第三方子系统的扩展能力,文章基于TMS570芯片设计了一种高安全通用总线接口模块。该模块符合VITA48的3U标准尺寸,集成了RS422、RS232、ARINC429、CAN、FlexRay以及ETH总线接口。该模块具有高集成度、高综合化、高安全性、小型化等优点,应用于通用飞机航电系统,可以很好的满足通用飞机多种多样的信号接口种类和数量需求。     

基于Verilog HDL语言的CAN总线控制器设计及验证

在此利用Verilog HDL设计了一款CAN总线控制器,首先根据协议把整个CAN总线控制器划分为接口逻辑管理、寄存器逻辑和CAN核心模块3个模块,然后用Verilog HDL硬件描述语言设计了各个功能模块,并使用Modelsim软件对各个模块的功能进行了仿真,最后使用FPGA芯片对设计的CAN总线控制器验证,并连接了一个包含该FPGA CAN总线控制器的4节点CAN总线网络。测试结果表明所设计的CAN总线控制器能够完成设定的功能。     

基于TMS320F28335的CAN和以太网接口设计

浮点型DSP以丰富的外设,较高的主频在工业控制领域得到广泛的应用,CAN总线设备构成的现场总线与以太网构成的高速通信网络已成为工业控制领域的发展趋势。介绍了一种基于TMS320F28335的CAN总线与以太网互联系统的设计方法,给出了系统各组成部分的硬件及软件的设计与实现。控制部分采用TI公司的TMS320F28335,CAN总线接口模块采用TI公司的SN65HVD230,以太网接口模块控制芯片采用Realtek公司的RTL8019AS。该设计具有可扩展性好和性价比高的优点。     

基于SJA1000的雷达信号处理机接口设计

SJA1000芯片是Philips公司的一种有效支持分布式控制或实时控制的CAN总线控制器芯片.介绍了采用SJA1000芯片的雷达信号处理机接口的硬件设计和软件设计,给出了发送节点的程序流程.     

基于C8051F040的CAN总线通讯系统设计

作为一种很有前途的现场总线,CAN总线通信相对于一般的串行通信总线,他的实时性、可靠性和灵活性的特点更加突出。介绍了C8051F040内部集成的CAN控制器的使用方法,给出了以此芯片为核心的CAN总线智能节点通讯接口的硬件和软件设计,实际的运行验证了设计的正确性。其设计通用性好、可靠性高、性价比高,具有广泛的应用前景。     

基于C8051F040的高性能CAN总线节点模块设计

经过分析CAN总线节点的功能,提出了CAN总线节点模块设计方案,介绍了典型C8051F040的CAN总线网络结构和CAN控制器结构,在硬件电路设计部分中,对模块实现原理及设计要点进行了详细的介绍,软件部分阐述了CAN总线节点模块的固件程序。给出了以此芯片为核心的CAN总线节点模块的应用层软件。设计的CAN总线节点模块功能强、性能高效,目前已经运用于工业现场使用的测量系统中。     

多功能列车车辆总线通信网关研究

为了解决现代电子工程应用中带有CAN(Controller Area Network)接口和RS232接口的列车车载设备与多功能车辆总线MVB(Multifunction Vehicle Bus)网络的互联、互通问题,设计了一种基于自主化核心控制芯片的多功能车辆总线通信网关.该网关从硬件模块和软件模块两部分进行设计,硬...     

基于TMS320F2812和USBI00的CAN—USB总线通信系统设计

介绍了一种基于DSP的CAN控制器和USB芯片的USB总线和CAN总线的通信模块的设计,提出了一种使用USB接口实现CAN总线网络与计算机连接的方案。利用USBl00芯片可在不了解任何USB协议的情况下,完成计算机RS232串口升级为USB接口,同时CAN接口采用DSP片上CAN控制器,硬件设计极为简单。在DSP的控制下,PC机与CAN节点可以双向通信,通信波特率可高达1Mb／s,传输数据稳定,可靠。实验证明,运用TMS320F2812片上eCAN模块来构成CAN总线通信系统更为简单,实用。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.