一种适用于安全多播的加密算法及密钥管理方案

为了避免安全多播中的密钥更新，强化密钥管理和提高安全多播的效率，在分析安全多播需求的基础上，提出一种适用于安全多播的加密算法和相应的安全多播密钥管理模型，实现了无需更新密钥就可满足前向和后向加密的抗同谋破解的安全多播。分析表明，给出的加密算法拥有良好的加密强度和加密速度。这种无需更新密钥的安全多播可以应用在各类多播环境中。     

安全多播准入控制系统的研究与实现

安全问题一直是多播技术发展中一个亟待解决的问题,而在所有的安全问题中,安全多播准入控制是研究的焦点.研究了国内外现有的典型多播准入控制方案,对它们的优缺点进行了分析和比较研究.结合各种多播准入控制方案的优点,给出了一个基于IGMP协议的安全多播准入控制方案.实验表明该安全多播准入控制方案具有安全性高、稳定性好、扩展性好、易于迁移到IPv6环境和便于部署等特点,有较高的实际应用价值.     

对DVB—RCS安全多播的改进

讨论了DVB-RCS标准的安全规范,并针对现有规范在多播安全性上的缺陷,提出了改进方案.通过扩展MKE,QKE和EKE消息发送密钥改进发送与更新多播密钥方案,达到了提供安全的多播卫星服务的目的.     

基于数字证书的树型结构安全多播方案

该文提出一种基于数字证书的安全多播方案，采用树型的多播拓扑结构。多播树中的每个节点都有一个标识其身份的数字证书，除了成员身份认证外，还可以安全地分发会话密钥和实现会话数据的认证，因而减少了多播群密钥管理的复杂度；由于采用分层的树型多播结构，成员加入和退出有了更大的可扩展性。     

一种基于时间结构树的多播密钥管理方案

随着Internet的发展,多播通信技术得到了广泛的应用.其中组密钥管理是多播安全的核心问题.文中在分析已有研究的基础上,提出了一种基于时间结构树的密钥管理方案,采用周期性的密钥更新机制,通过安全滤波器分配新的组密钥,大大减少了密钥更新时的传输消息,提高了密钥更新的效率,实现密钥更新的可靠性.     

一种基于多载波的多播系统物理层安全方案

受限于发送方天线数目,无线多播系统整体信道通常不存在零空间,无法利用传统的物理层安全技术保证其安全传输。针对这一问题,该文提出一种基于多载波的多播系统物理层安全方案。首先,建立了多载波多播系统物理层安全通信模型;之后,通过分配载波产生合法用户的信道零空间,在零空间内引入人工噪声保证系统的安全传输;最后,以最大化保密传输速率为目标,在系统总功率受限情况下,利用Kuhn-Tucher条件对各子载波功率进行了优化。仿真结果表明:该方案不受限于发送方天线数目,并且所提功率分配方法的系统保密传输速率比等功率分配方法提升约2 bit/(s Hz)。     

3G系统演进中的安全问题

移动通信中的安全非常重，文章介绍了3G移动通信系统演进中与用户终端相关的安全问题，对截获IMSI、跟踪UE、强制切换、未加保护的自启动和多播等进行了分析，并指出了移动通信中安全的发展方向。     

IP网络安全多播控制机制的设计与实现

多播的安全问题不单单只包括多播分组数据的安全性。利用多播的安全隐患发起拒绝服务攻击现象在网络环境中越来越多。多播的安全隐患根源是多播的开放组模式。通过研究现有多播控制协议的安全问题，总结恶意攻击的特性并提出一种多播安全控制的解决方案，用于缓解多播安全漏洞对多播传输造成的危害。该方案可以使网络管理员按照网络应用的具体要求有效的控制和管理多播分组。并且在Linux平台下实现了该方案。     

多组多播集中式大规模MIMO系统的安全性能分析

分析了主动攻击下的多组多播集中式大规模多输入多输出(Multiple-Input Multiple-Output,MIMO)系统的安全性能。基于上行导频训练估计的信道状态信息,系统采用功率限制下的共轭波束成形方案实现下行多播传输。通过分析合法用户安全速率的下界和窃听者信息速率的上界,得到了系统安全速率下界的闭合表达式。进一步,推导出基站天线数趋于无穷大情况下此安全传输系统能获取的极限安全速率。实验仿真验证了所得结果的正确性。     

一种基于时间流的安全多播密钥更新机制的研究

基于Internet网的多播业务的广泛应用推动了人们对安全多播的研究,其中,对于密钥更新 机制的研究是一个热点也是难点。该文设计了一种变长输出摘要和变长密钥的单向散列函数用于所提出的一种基于时间流的密钥更新协议,并分析了该协议的各种性能。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.