Windows2000环境下的串口通信

对windows 2000环境下串口通信的开发方法进行了阐述,对每种方法的编程实现进行了介绍,比较了各自的优缺点,并根据具体使用要求,选择了合适的开发方法.对串口通信特别是串口数据处理以及串口通信模块封装进行了研究.介绍了环形缓冲区数据处理方法和动态链接库(DLL)封装串口通信模块的方法,并通过Visual C++编写...     

串口联网技术在远程设备控制中的应用

简单讨论了串口设备联网技术目前的发展现状,分析了几种常见方案的特点及可行性。重点介绍了在某个综合视频监控系统中基于串口联网模块进行多个串口设备联网的系统解决方案,实现了通过网络与远程串口设备的控制和通信。采用Socket通信模式开发系统应用软件,对系统软件实现的关键部分作出了详细的说明。     

基于嵌入式系统ZigBee网与互联网网关设计

为实现互联网与无线传感网络ZigBee互通,提出了一种基于嵌入式系统网关设计方案。介绍了ZigBee与TCP/IP协议的分层结构及作用,网关硬件以TI AM335X与CC2530F256芯片为核心组成,模块间以串口进行通讯。在网关中TCP/IP与ZigBee协议的解析由各自模块实现,网关通信采用C/S结构,通过串口实现在应用层互联网信息与ZigBee信息交互。该方案具有实现结构简单、对用户透明,但无线传感网络规模受限。     

基于GSM/GPS列车监控报警车载终端的设计

本文在探讨以C8051F340单片机为微控制处理器的软硬件结构基础上,根据实际列车监控报警车载终端系统的需求,合理的设计了列车监控报警车载终端的硬件部分,对GPS模块获得的列车当前运行的位置、速度、运行方向等相关信息进行分析,运用GSM模块进行数据通信。软件部分采用模块化的结构设计,运用C语言进行编程,为了避免通信拥塞,保证数据传输的可靠性,GPS模块是通过串口中断来接收数据,实现接收GPS模块列车当前运行的位置、速度、运行方向等相关信息,GSM模块也是通过串口中断来发送数据,把信息安全可靠地传到监控中心。     

基于虚拟仪器的PLC监控系统设计

将虚拟仪器技术与PLC相结合,通过串口实现上位机与现场PLC监控网络的通信。详细阐述了LabVIEW实现串口通信的过程,开发了通信软件系统,实现基于虚拟仪器的PLC监控系统。     

IP／B—ISDN网关媒体流传输格式转换的分析和实现

网关为不同的通信网络和通信协议提供一个接口,通过翻译通信格式和通信过程完成不同网络设备的互通。主要研究了H．323终端在IP网络中的媒体流格式和H．321终端在B－ISDN中的媒体流格式,并编程来实现两终端在网关中的数据流转换。     

波特率连续可调的串口通信技术

在基于PCI接口波特率连续可调的串口通信技术中,串口通信模块作为整个PCI接口功能的本地模块,是实现PCI接口模块与外部串口信息的沟通。文中介绍了波特率连续可调技术的实现原理和方法,并基于PCI接口和FPGA技术完成通信模块的实现与测试验证。其具有设计的灵活性和应用的广泛性     

STM32与虚拟仪器串口通信的研究

利用虚拟仪器Lab VIEW图形化软件实现PC机与STM32之间的串行通信。PC机与STM32串口通信的实现方法,其中重点介绍了VISA实现串口通信以及编程的注意事项,利用STM32强大的数据处理和实时性等功能,最后在上位机监控软件对下位机实时监控的应用背景下利用Lab VIEW实现了双机通信.Lab VIEW与ST M 32串口通信达到了期望的效果。由实验结果可知,虚拟仪器功能强大,使用方便,有较好的可扩展性和可移植性。     

无线通信的远程监控系统设计

随着移动通信技术的快速发展,具有远程无线控制功能的监控系统得到广泛应用。设计了一种基于GPRS通信网络的远程监控系统,详细介绍了系统的硬件结构及软件设计。该系统采用单片机通过串口连接GPRS通信模块和图像捕获模块,并扩展红外探测模块,在接收到来自于远程控制中心或红外模块探测的控制指令后启动图像捕获模块,并将所拍摄的图像自动传至指定手机,实现对现场的实时监控。该系统成本低廉,稳定性好,是一种高性价比的远程监控解决方案。     

基于DSP的电动舵机用高速串口通信设计

介绍一种基于DSP的高速串口通信方法,利用DSP芯片内部SCI模块与外部驱动电路连接,采用RS422通信协议,实现高速串口通信。DSP采用C语言对通信数据进行打包、收发、解析等编程处理;上位机采用LabVIEW图形化的编程语言简化底层驱动编写,实现串口通信应用程序的开发。实验结果表明,通过上位机发送指令,利用RS422通信电路能实时、有效实现电动舵机控制。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.