光开关的关键指标及其测试

随着光通信技术的发展，光开关已广泛地用于光网络系统的保护和恢复，路由选择，光交叉连接(OXC)，可配置光分插复用(COADM)，以及光纤通信系统中器件测试和网络通道监控等方面，为光网络系统提供光路自愈保护，路由选择等功能。     

智能光网络的路由技术

本文比较了传统IP网络和智能光网络路由技术的差别,介绍了满足QoS需求的智能光网络路由技术和适应智能光网络需要的路径选择算法的基本概念,设计基础,着重描述了在基于GMPLS扩展条件下约束最短路径算法的设计思路.     

智能光网络路由及其关键技术分析

分析了光网络路由不同于IP网络路由的显著特征,介绍了智能光网络分层多域的层次化路由体系结构,并对网络拓扑抽象、网络收敛等层次化路由中的关键技术进行了深入的讨论,最后介绍了目前光网络路由技术的标准化状况。     

WDM光网络中固定路由的优化算法

通过研究WDM光网络中固定路由策略的选取对网络性能的影响，提出了一种新的用于优化固定路由的算法-综合代价法。该算法综合考虑了链路负载和路由跳数这两个因素，以综合代价为策略进行路由优化。计算机仿真结果表明，针对不同的网络负载情况，综合代价法能够有效地降低网络的阻塞率，提高网络的性能。     

适用于Pbit/s光分组交换网络的丢包率下限模型

文章针对通过优化路由来改善光分组交换网络性能这一方法进行了深入地分析。文章认为在输出光缓存结构下可以计算出网络丢包率下限的理论模型,通过将该模型得到的丢包率下限与在已有路由算法下由仿真得到的丢包率进行比较,能够预测出最佳路由算法下的丢包率,从而进一步预测通过优化路由所能获得的最大性能提升。     

组播技术及其在光层的实现

带宽密集型的多媒体应用对现有网络提出了新的要求,组播技术有助于解决其在网络带宽和服务质量方面的问题,而在光层实现组播具有更简单、高效的特点.然而,光层组播由于光缓存、光分束和光波长变换等光器件的限制,呈现出和IP层组播不同的特点.对IP层和光层组播进行了讨论,分析了光层组播模型,并对稀疏光分束和稀疏波长变换的光网络组播路由提出了重路由到源和重路由到相关节点两种重路由方式.     

光网络的发展

本给出了光网络的概述。叙述了光网络的简介、它们的性能和特征，以及它们在当今通信技术中的地位，对组成光网络的各种部件都进行了分析研究。所研究的对象包括光纤的结构和操作、光发射机和光接收机，光放大器以及其它相关的光部件。并介绍了各类光网络，这里包括光链路网络、广播和选择网络、波长路由网络、光子包交换网络以及光脉冲交换网络。章最后还展望了光网络领域的发展趋势。     

WDM光网络中动态RWA算法仿真的实现

在WDM光网络中，在给定一组连接请求后，需要为之建立路由并分配波长，这被称为路由和波长分配问题（RWA）。由于当前光网络中的业务呈现爆炸式的增长，而光网络中的可用资源却是有限的，因此如何使用合理的RWA算法来优化网络资源的利用就显得尤为重要。目前已有很多文献提出了基于各种优化目标的RWA算法，也都通计算机仿真的方法测试和评估了算法的性能。计算机仿真是进行算法性能评估的主要手段，但是关于算法仿真的实现，—般的文献都涉及的很少，本文主要研究了WDM光网络中动态RWA算法计算机枋真的实现。     

智能OXC在ASON中的应用

IP与光技术的融合要求底层光网络具有高度的灵活性和可扩展性，产生了全新的ASON（自动交换光网络），智能OXC（光交叉连接）设备是ASON中的最关键的设备。文中简单介绍了智能自动交换光网络的概念、网络结构，详细分析了ASON中智能OXC矩阵硬件结构和OXC控制平面信令路由功能，最后讨论了智能OXC相关协议及扩展的GMPLS技术。智能OXC强大的光交换能力结合智能信息路由协议，必将与现有网络融合向全智能光网络发展。     

光分组交换网络结构

光分组交换技术日益成为世界各国研究的重点，光交换的结构设计是光分组交换技术的关键。文中详细介绍了目前正在研究的空间光开关、广播选择和波长路由三种光分组交换结构。随着光网络、光器件和光系统技术的发展，光分组交换必会走向实用化。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.