基于最小二乘支持向量机的衰落信道预测算法

该文探讨了利用相空间重构和支持向量机进行衰落信道非线性预测算法。该算法基于多径衰落信道具有混沌行为,利用坐标延迟理论,重建衰落信道系数的相空间,再根据混沌吸引子的稳定性和分形性,在相空间中通过递归最小二乘支持向量机(RLS-SVM)进行预测。该算法对原始数据可以进行更平滑的处理,在噪声环境下预测的时间范围更长。对时间跨度为63.829ms的衰落系数进行了预测,仿真结果表明,在信噪比为15dB时,预测结果优于AR算法。     

一种新型衰弱信道预测算法

提出了一种基于支持向量机的衰落信道预测算法.在相空间中构建学习样本,然后借助支持向量机的学习与判决能力实施预测.对Jakes衰落信道的预测实验表明,该算法是有效的.同时也表明嵌入维数对预测准确度有着较大影响.     

基于FDTD方法的无线信道衰落特性模拟研究

为了表述无线信道衰落的时变及远区分布特性，提出了利用时域有限差分(FDTD)方法研究由多径效应引起的时变无线信道衰落的方法。在此将无线信道的衰落建模为随机过程，而不是通常的确定性随机变量。首先基于Clarke统计模型，利用FDTD方法研究了时变无线信道的小尺度平坦衰落特征；然后利用Monte Carlo方法和FDTD方法产生了具有信道多普勒功率谱特性的色高斯随机过程，再基于无线信道的时变统计特性建模，用Suzuki模型研究了时变无线信道的快衰落；最后将无线信道衰落特性分布和理论分布做了比较，验证了方法的有效性。     

衰落信道下基于支持向量机的调制识别方法

本文以四阶累积量为特征参数,采用支持向量机(SVM)将分类特征值映射到高维空间中,并构建最优分类超平面,实现对QPSK、16QAM、64QAM和OFDM四种信号的自动调制识别。分析了AWGN信道、Rayleigh衰落信道和Nakagami衰落信道对四阶累积量的影响,推导并给出了经过衰落信道后四阶累积量的表达式。基于支持向量机的调制识别方法解决了特征样本在低维空间的不可分问题,仿真结果表明,在SNR低于10dB时,该方法的性能明显优于决策树方法,信噪比大于等于0dB时,各种信号的调制识别率在90%以上。      

无线接入信道损耗特性分析

小尺度衰落中的瑞利衰落和莱斯衰落是2种最为常见的无线接入信道衰落。从工程设计角度出发,重点分析了莱斯和瑞利信道条件下的2个重要指标——衰落深度和衰落速度,推导了相应的计算公式,特别是莱斯和瑞利信道条件下的衰落中值进行分析和计算。给出了在瑞利和不同莱斯因子条件下的PSK误码性能,为进行多径衰落无线接入信道的系统工程设计提供了参考。     

支持车联网的无线光信道副载波调制方法

传统载波调制方法存在较高的误码率缺陷,为此提出了支持车联网的无线光信道副载波调制方法。首先建立车联网环境下的无线光信道模型,从频率和时间两个方面分析无线光信道的选择性衰落特性,然后设计无线光信道副载波调制框架,以子符号加和的方式,调制无线光信道副载波信号,支持车联网运行。实验结果:相对对比方法,在不同信道信噪比条件下,所提方法的误码率均值较三组对比方法分别减小0.000 079 5 bit/s、0.000 044 5 bit/s、0.000 002 bit/s;在不同副载波调制阶数和传输速率条件下,所提方法的无线光信道通信时具有较小的误码率。     

网络级外场无线信道复现模拟技术及实现

外场无线网络信道在室内重现的复现技术,将会对无线技术研究和产品验证的方式产生很大影响。本文把无线信道分为单路信道和网络信道,首次对复杂无线网络信道实时控制技术、总体结构、外场采集信道和模型信道结合等技术进行关键技术研究。通过这些关键技术解决了支持不同MIMO信道、多基站多终端下的复杂多变的干扰关系、支持外场复杂衰落、支持外场采集信道和模型信道、信道可控性等问题,最后本文给出了典型的无线网络信道仿真应用。     

无线视频通信中信道特性的研究

在无线视频通信中，无线信道环境的好坏将直接影响到通信质量，信号传输中的带宽．波动、高误码率和接收的异种性为视频通信系统的设计带来了极大的困难。讨论了无线信道电波传播的特性，给出了无线时变衰落信道的模型并分析了视频传输的信道失真，为复杂无线环境下的视频通信系统的设计提供了理论依据。     

室内X波段离体信道传播特性的测量与建模

研究了在X波段以人体为中心环境的无线信道衰落模型建模方法，围绕可穿戴天线在体表不同部位的无线信道进行了实验和分析.分别在离体与无体场景下测量视距（line-of-sight, LoS）和非视距（non-lineof-sight, NLoS）两种路径的信道衰落，对比分析人体不同部位的阴影效应和穿透损耗，结果表明改变天线穿戴部位，信道衰落曲线的损耗指数和截距均会发生变化；人体穿透损耗与信道频率、收发端天线之间的距离无关.基于现有的模型对实验数据进行拟合，提出一种与人体不同部位相关的带有体表阴影效应、穿透损耗修正因子的离体信道衰落模型.该模型细化了人体不同部位的信道特性，与通用模型相比能更加精地确描述离体信道传播环境.     

一种无线通信信道的设计与算法仿真

无线信道在实际中难以测试,但信道仿真可以解决这一问题。文中给出了一种灵活且适应性强的无线移动信道模型,并给出了该模型中的衰落信道模型及算法,运用该算法对衰落信道进行仿真,给出衰落信号的仿真结果以及输入信号经衰落信道处理后的结果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.