共查询到19条相似文献,搜索用时 328 毫秒
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对比分析了不同抛光垫的表面形貌、表面粗糙度、硬度以及涵养量对氧化镓晶片化学机械抛光过程中表面质量和材料去除率的影响规律,结果表明:在同一抛光参数条件下,Suba600无纺布抛光垫的材料去除率最大,为30.8nm/min,但抛光后氧化镓表面有明显的凹坑;Politex阻尼布、LP57聚氨酯抛光垫抛光后晶片表面形貌都较好,获得了镜面无损伤晶片表面,但LP57聚氨酯抛光垫的材料去除率为22.6nm/min,大于Politex阻尼布抛光垫16.4nm/min的材料去除率;LP57聚氨酯抛光垫更适合对单晶氧化镓晶片进行化学机械抛光。该研究为氧化镓化学机械抛光(CMP)提供了参考依据。 相似文献
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以带沟槽抛光垫多级粗糙间隙内的固液两相微流动为研究对象,基于计算机模拟生成多级粗糙表面,利用格子Boltzmman方法(Lattice Boltzmann method,LBM)计算微观流场,对抛光液在多级粗糙间隙内的流动过程以及固体颗粒的运动轨迹进行分析。探讨将这种新的抛光液两相微流动分析方法用于平坦化机理研究的可行性,并初步研究固体颗粒在多级粗糙间隙内的运动和碰撞过程,分析固体颗粒的运动特性。研究表明,多级粗糙表面的计算机模拟生成技术结合稀疏两相流模拟可以用来分析多级粗糙间隙内抛光液流动和固体颗粒运动轨迹。通过对抛光垫多级粗糙间隙内两相微流动的研究,有助于揭示晶片表面缺陷产生的机制,并提出减少缺陷的抛光垫微结构设计及修整方案。 相似文献
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抛光垫特性对抛光中流体运动的影响分析 总被引:1,自引:0,他引:1
抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。考虑抛光垫粗糙度和孔隙等对抛光液流动的影响,提出了一个初步的晶片级流动模型,并用数值模拟方法研究了不同参数条件(载荷和速度的变化等)下抛光液的流动特征。计算结果表明增加外载荷将导致粗糙峰的磨损概率增加,增加剪切速率则提高了剪切应力,均可导致高材料去除率。模型能较好理解材料去除机制和输运,从而有助于对化学机械抛光机制的了解。 相似文献
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《制造技术与机床》2020,(6)
无磨粒化学机械抛光是一种柔和的表面处理方法,可以有效去除磷酸二氢钾(KDP)晶体表面的小尺度飞切刀纹。在抛光过程中不使用磨粒,KDP晶体与抛光垫粗糙峰直接接触,两者之间相对运动,在表面接触应力的作用下,抛光垫对KDP晶体表面产生微机械作用,在实现材料去除和改善表面质量方面具有重要的作用。为了深入了解无磨粒化学机械抛光中微机械去除作用,文章通过研究表面接触应力分布和变化规律,对抛光过程中的微机械作用进行定量分析,建立了KDP晶体与抛光垫粗糙峰接触力学的数学模型并开展系统研究。根据Hertz理论对抛光过程中KDP晶体表面接触应力进行了计算与分析,研究了抛光压力、摩擦系数、抛光垫杨氏模量和抛光垫粗糙峰半径等抛光参数对微机械作用的影响规律,获得了不同抛光条件下最大许用抛光压力。结合实验结果,对KDP晶体与抛光垫之间的微机械作用进行了实验验证,进一步揭示了KDP晶体无磨粒化学机械抛光去除机理。 相似文献
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针对软脆碲锌镉晶片的传统加工工艺“游离磨料-抛光-化学机械抛光”存在的缺点,提出“固结磨料研磨-新型绿色环保抛光液化学机械抛光”新方法。固结磨料研磨工艺为:采用3000号刚玉防水砂纸,压力为17kPa,抛光盘与抛光垫转速均为80r/min,研磨时间为5min。新型绿色环保抛光液含有双氧水和硅溶胶,采用天然桔子汁作为pH值调节剂。化学机械抛光工艺为:采用自行研制的化学机械抛光液,绒毛抛光垫,抛光压力为28kPa,抛光盘与抛光垫转速均为60r/min,抛光时间为30min。试验结果表明,经过上述加工可获得超光滑的表面,表面粗糙度算术平均值、均方根值、峰谷值分别可以达到0.568nm、0.724nm、6.061nm。 相似文献
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Pei-Lum Tso Shuo-Young Ho 《The International Journal of Advanced Manufacturing Technology》2007,33(7-8):720-724
The primary consumables in the chemical mechanical polishing (CMP) process are the polishing pad and the slurry. Among those
consumables, the polishing pad significantly influences the stability of the process and the cost of consumables (CoC). Furthermore,
the small holes on the pad surface will be filled by the reactant from the CMP process, and the surface of the pad will deposit
hard glazing gradually. The glazing not only reduces the ability of absorbing slurry of the pad, but it also causes scratching
on the work piece. In order to maintain the stability of the CMP process and return to an ideal pad surface status, we must
condition the pad according to a regular time schedule. At the same time, if we use different pad conditioning factors, the
dressing rate of the CMP pad will be different. Most important of all, we have to decrease the pad material abrasion due to
the pad conditioning process. In conclusion, if we can understand the influence of the dressing rate and conditioning factors
effectively, it will be useful for maintaining CMP process stability, extending pad life, and reducing CoC and non-processing
time. 相似文献
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以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明:当抛光压力为48 265 Pa(7 psi)、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。 相似文献
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Diamond conditioners or dressers are commonly used to dress polishing pads that are applied in the chemical mechanical polishing (CMP) of silicon wafers for integrated circuits. In this work the fundamental characteristics of dressing action on the polyurethane pad are investigated for dressing by a single diamond with various shapes (point-cutting, line-cutting and face-cutting), and the polishing rates of silicon dioxide by the resulting pad are studied. Experimental results reveal that a groove with ridges on both side walls is formed as the diamond is moved over the pad. The cutting action dominates when the point-cutting is responsible for dressing. On the contrary, the plowing action plays a major role under face-cutting. A large spring back reduces the protrusion of the diamond in contact with the pad surface as groove depth is smaller than dressing depth. The use of point-cutting is beneficial since it results in the least damage to the pad and a higher but less variable polishing rate. 相似文献
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J. Watanabe G. Yu O. Eryu I. Koshiyama K. Izumi K. Nakashima M. Umeno T. Jimbo K. Kodama 《Precision Engineering》2005,29(2):151-156
The surface waviness with concentric circular pattern is generated on highly-boron-doped Si wafer by chemical–mechanical polishing (CMP) with amine system polishing slurry. To investigate the generation mechanism of the waviness, the mechanical and chemical characteristics were clarified using the silicon crystal samples with various boron concentration level ranging from 2.9 × 1017 cm−3 to 1.3 × 1020 cm−3. The conventional silicon substrate used as epitaxial wafer has boron concentration of about 2.5 × 1018 cm−3, a region at which the radical change of etching rate is induced with amine system chemical reagent. The mechanical micro-hardness of highly-boron-doped Si is 30% higher than that of lightly-doped Si. It is found that SiB bond in crystal lattice is firmed up and stabilized for mechanical stress and chemical reaction. To cancel the difference in CMP rate based on boron concentration deviation, increasing the mechanical action in CMP was proposed and performed. The precision CMP was performed using the harder polishing pad and a smooth surface without waviness was obtained. 相似文献
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为了解决在化学机械抛光过程中抛光温度分布不均匀问题,使用叶序仿生抛光垫进行研究,并建立了抛光温度场模型。利用有限元分析软件ANSYS,对抛光温度场进行了仿真分析,获得了抛光垫的叶序参量对抛光温度分布的影响规律。通过对仿真结果进行分析发现,合理选择仿生抛光垫的叶序参数,能够使抛光温度变得更均匀。 相似文献
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利用三维格子Boltzmann法(LSM),对化学机械抛光(CMP)的润滑过程做了数值模拟,得到了不同晶片和抛光垫转速下的压力分布,并讨论了抛光液黏度对高压涡中压力最大值的影响.数值模拟结果表明,晶片自转是产生"双涡图"的主要原因,抛光垫旋转则主要产生"单涡图",抛光垫和晶片旋转的综合作用一起影响抛光效果,其中抛光垫的转速的改变对去除率影响较大.利用格子Bohzmann法模拟润滑问题,所得结果与求解Reynolds方程的结果一致,并具有计算效率高、几何直观等特性,能实现CMP过程的三维模型,且较容易实现对多相流的模拟. 相似文献
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Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale 总被引:2,自引:0,他引:2
No conclusive results have been proposed for the influence of the abrasive particle size on the material removal during the chemical mechanical polishing (CMP). In this paper, a mathematical model as a function of abrasive size and surface oxidizer concentration is presented for CMP. The model is proposed on the basis of the molecular-scale removal theory, probability statistics and micro contact mechanics. The influence in relation to the binding energy of the reacted molecules to the substrate is incorporated into the analysis so as to clarify the disputes on the variable experimental trends on particle size. The predicted results show that the removal rate increases sub-linearly with the abrasive particle size and oxidizer concentration. The model predictions are presented in graphical form and show good agreement with the published experimental data. Furthermore, variations of material removal rate with pressure, pad/wafer relative velocity, and wafer surface hardness, as well as pad characteristics are addressed. Results and analysis may lead further understanding of the microscopic material removal mechanism from molecular-scale perspective. 相似文献