双层石墨烯电控开关设计

提出并设计了一种基于双层石墨烯结构的电控太赫兹波开关。该开关结构由棱镜-石墨烯-二氧化硅-石墨烯-锑化铟组成。太赫兹波从棱镜左侧以特定角度入射,棱镜右侧固定有太赫兹波探测器,通过外加电场改变石墨烯介电常数,影响等离子体波矢匹配,进而控制太赫兹波反射率,实现太赫兹开关目的。实验运用COMSOL软件对双层石墨烯电控开关进行仿真模拟,将1 THz的太赫兹波以35.42从棱镜左上方入射,在无外加电场时,太赫兹波反射率为2.63%,此时为太赫兹波开关的关状态。施加外加电场时,石墨烯的介电常数发生变化,太赫兹波反射率改变并达到93.01%,棱镜结构接近全反射,此时为太赫兹波开关的开状态。研究结果表明该结构具有良好的太赫兹波强度控制性能,电控太赫兹波开关消光比为15.5 dB。     

Spectroscopic Study on Ultrafast Carrier Dynamics and Terahertz Amplified Stimulated Emission in Optically Pumped Graphene

This paper reviews recent advances in spectroscopic study on ultrafast carrier dynamics and terahertz (THz) stimulated emission in optically pumped graphene. The gapless and linear energy spectra of electrons and holes in graphene can lead to nontrivial features such as negative dynamic conductivity in the THz spectral range, which may lead to the development of new types of THz lasers. First, the non-equilibrium carrier relaxation/recombination dynamics is formulated to show how photoexcited carriers equilibrate their energy and temperature via carrier-carrier and carrier-phonon scatterings and in what photon energies and in what time duration the dynamic conductivity can take negative values as functions of temperature, pumping photon energy/intensity, and carrier relaxation rates. Second, we conduct time-domain spectroscopic studies using an optical pump and a terahertz probe with an optical probe technique at room temperature and show that graphene sheets amplify an incoming terahertz field. Two different types of samples are prepared for the measurement; one is an exfoliated monolayer graphene on SiO₂/Si substrate and the other is a heteroepitaxially grown non-Bernal stacked multilayer graphene on a 3C-SiC/Si epi-wafer.     

Electro-optically Induced and Manipulated Terahertz Waves from Fe-doped InGaAs Surfaces

We demonstrate the presence of dual simultaneous nonlinear mechanisms: field-induced optical rectification (FIOR) and field-induced surge current (FISC) for the generation of terahertz (THz) pulses from p-type and n-type Fe:In_0.53Ga_0.47As surfaces upon excitation with femtosecond laser pulses centered at 800 nm wavelength. Experimental investigations of the dependence of the generated THz waves on the incident angular optical polarization, optical irradiance, and the direction and magnitude of applied electric DC fields give confirming results to the proposed THz generation mechanisms. Applying external DC electric fields in the plane of the incident optical field shows efficient capability in manipulating the direction and phase of the generated THz waves, and controlling the refractive index of Fe:In_0.53Ga_0.47As material in the THz range, in addition to enhancing the emitted THz power up to two orders of magnitude. The fast and reliable response of Fe:In_0.53Ga_0.47As to the changes in the direction and magnitude of the optical and electrical fields suggests its use in amplitude and phase modulators, and ultrafast optoelectronic systems.     

基于石墨烯超材料的三频段可调谐完美吸收器

为进一步降低太赫兹频率下高性能调控器件的结构复杂度,提出一种三频段可调谐超材料完美吸收器. 该吸收器由图案化的石墨烯层和经Si介质层隔开的Au接地平面组成,利用太赫兹下的石墨烯表面等离子体共振以及图案化石墨烯与电场耦合提供的电偶极子共振形成多个吸收峰. 数值仿真结果表明,在0.489 THz、1.492 THz和2.437 THz处实现了对入射波的共振吸收,各峰值处的幅值均大于99.9%. 由于吸收峰处的幅值可以通过外部施加的偏置电压改变石墨烯的费米能级进行控制,因而所提出的吸收器结构的工作状态可在反射器和吸收器之间灵活切换. 同时,通过对吸收器单元结构的对称设计实现了对极化角度的不敏感特性,且在宽入射角范围内仍能保持良好的吸收性能. 因此,所设计的基于石墨烯的太赫兹超材料功能器件在调制和传感方面具有巨大的潜力.     

Ultra-compact 1 × 8 Channel terahertz Wave Power Splitter

Relying on 1?×?2 photonic crystal waveguide and photonic crystal resonator, a compact eight-channel terahertz wave power splitter is proposed. The mechanism of such a device is further theoretically analyzed and numerically investigated with the aid of the plane wave expansion method and the finite-difference time-domain method. With an appropriate design, the proposed power splitter can split the input terahertz wave energy equally into eight output ports at the frequency of 0.667 THz. Furthermore, the total size of the present device is of 4.33 mm?×?3.74 mm. Due to its small size, the multi-channel terahertz wave power splitter has practical applications in the terahertz wave integrated circuit fields.     

Progress of Terahertz Devices Based on Graphene

Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz （THz） optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.     

Monte Carlo simulation of THz maser based on optical phonon transittime resonance in GaN

The linear and nonlinear analysis of microwave power amplification and generation in the terahertz (THz) frequency range is carried out by the Monte Carlo method in bulk wurtzite GaN. It is shown that a dynamic negative differential mobility persists up to 80 K due to the transit-time resonance associated with optical phonons. The generation frequency depends almost linearly on the static electric field strength and can be tuned in the wide frequency range from 0.2 to 3 THz when the electric field varies from 1 up to 12 kV/cm. The optimum amplitude of the microwave electric field generated by bulk GaN is found to be of the order of the static electric field thus leading to a significant maximum efficiency of about 1 to 1.5% for microwave power generation in the THz frequency range     

Tunable,Grating-Gated,Graphene-On-Polyimide Terahertz Modulators

An electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth is presented and it is exploited to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal grating used as a gate electrode, with an HfO₂/AlO_x gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. The authors achieve 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9–2.7 THz range. The modulator is then integrated with a multimode THz QCL. By adjusting the modulator operational bandwidth, the authors demonstrate that the graphene modulator can partially compensate the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the operational range, with 98 equidistant optical modes and a spectral coverage ~1.2 THz. This paves the way for applications in the terahertz, such as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and metrological tools for spectroscopy at THz frequencies.     

Multilayer Graphene Broadband Terahertz Modulators with Flexible Substrate

Fabrication of terahertz modulators as simple devices with high modulation depth across a broad bandwidth is still very challenging. In this study, four different chemical vapor deposition grown multilayer graphene (MLG) modulators based on MLG/ionic liquid/gold sandwich structures have been investigated. Flexible substrates (PVC and PE) were chosen as host materials, and devices were fabricated with three different thicknesses. The resultant MLG devices can be operated at low voltages between 0 and 3.4 V providing nearly complete modulation between 0.2 and 1.5 THz with low insertion losses. Even with such low gate voltages, the devices have been doped significantly inducing 7–11-fold improvement in their sheet conductivities depending on device thickness. In addition, sheet conductivity has been improved more than three times as the graphene layer number increased from 30 to 100. With the demonstration of promising device performances, the proposed modulators can be potential candidates for applications in terahertz and related optoelectronic technologies.     

基于超材料的太赫兹幅度调制器设计

提出了一款基于超材料的太赫兹幅度调制器,其结构由开口"弓"形超材料结构、高电子迁移率晶体管、斜十字馈线和碳化硅衬底四部分构成."弓"形超材料结构开口处的连通和断开两种状态将对通过该结构的太赫兹波产生不同的响应.在开口处添加高电子迁移率晶体管可模拟开口连通和断开的效果.当对晶体管上的栅极不施加偏压时,超材料结构开口相当于导通,对太赫兹波透射系数高;当对晶体管上的栅极施加偏压时,超材料结构开口相当于断开,对太赫兹波透射系数低.仿真结果表明,在0.22 THz处,对晶体管栅极不施加偏压时,调制器的透射系数为0.579;对晶体管栅极施加偏压时,调制器的透射系数为0.040.通过公式计算得到其调制深度为93％,而且对x和y极化入射波具有不敏感的特性.同时,通过分析0.22 THz处的电场分布和表面电流分布研究了该太赫兹调制器的工作原理.所设计的太赫兹调制器具有调制深度高、结构简单和易于加工等特点,在太赫兹通信领域具有广阔的应用前景.     

宽带调谐光子晶体光纤多功能太赫兹器件

基于液晶分子的指向矢随外加电场改变而变化的特点,设计了一种新型电场调制液晶太赫兹器件。利用全矢量平面波展开法和光束传播法分别研究了光子晶体光纤的带隙位置和传输光谱的电场分布。同时,利用时域有限差分法计算了液晶分子指向矢随外电场的变化关系。结果显示该器件不仅可以在0.55 THz的宽带范围内实现开关功能,且具有耦合损耗低、消光比高等优点,消光比为30.78 dB。当太赫兹波的入射频率满足光纤的单偏振条件时,该器件还具有偏振控制功能,能够改变传输模式的偏振状态。     

飞秒等离子体间非线性作用对超高频电磁波影响的研究

主要研究了飞秒等离子间相互的非线性作用对超高频电磁波——太赫兹波产生的影响。国内外许多研究机构已经证实,在太赫兹波产生的过程中,等离子体间的相互非线性作用会对太赫兹波产生影响。笔者结合理论分析设计并搭建一种了双束等离子体重合产生太赫兹波的测试系统,研究发现等离子体间相互非线性作用时,会产生三阶非线性光学效应,等离子体的折射率和相位发生变化形成非均匀场导致了太赫兹波辐射能量的降低,并在实验测量研究中发现随着等离子体波长双束等离子波长的增加,等离子体密度增加,导致太赫兹波的辐射能量的降低现象更加明显,另外,等离子体功率越大,太赫兹波吸收越大。同时,研究发现等离子体周围惰性气体分子质量影响太赫兹降低程度,气体分子质量决定着飞秒激光聚焦空气电离出的等离子体所形成的电场强度,分子质量越高,所形成的电场强度越强,双束等离子体重合时对太赫兹波降低的辐值越大。这些为研究等离子体间非线性作用对太赫兹波的影响提供了更加全面的理论支撑,有助于推动太赫兹波技术在军事及民用领域的快速发展。     

基于场效应晶体管的太赫兹探测器中天线设计的一种有效方法

在场效应晶体管太赫兹探测器中,合理的天线设计可以增强晶体管和太赫兹波之间的耦合效率,从而提高太赫兹探测器的响应度.提出一种基于晶体管栅极边缘沟道电场的仿真来设计平面天线的方法.这种方法尤其适用于太赫兹波段晶体管输入阻抗不容易得到的情况.通过流片完成的基于氮化镓高电子迁移率晶体管的太赫兹探测器的响应度测试证实了这种方法的有效性.集成碟形天线和双偶极子天线的太赫兹探测器最大响应度分别在170.7 GHz(1568.4 V/W)和124.3 GHz(1047.2 V/W)频点处测得,这个测试结果接近基于晶体管栅极边缘沟道电场的仿真结果.     

Calculation and Study of Graphene Conductivity Based on Terahertz Spectroscopy

Based on terahertz time-domain spectroscopy system and two-dimensional scanning control system, terahertz transmission and reflection intensity mapping images on a graphene film are obtained, respectively. Then, graphene conductivity mapping images in the frequency range 0.5 to 2.5 THz are acquired according to the calculation formula. The conductivity of graphene at some typical regions is fitted by Drude-Smith formula to quantitatively compare the transmission and reflection measurements. The results show that terahertz reflection spectroscopy has a higher signal-to-noise ratio with less interference of impurities on the back of substrates. The effect of a red laser excitation on the graphene conductivity by terahertz time-domain transmission spectroscopy is also studied. The results show that the graphene conductivity in the excitation region is enhanced while that in the adjacent area is weakened which indicates carriers transport in graphene under laser excitation. This paper can make great contribution to the study on graphene electrical and optical properties in the terahertz regime and help design graphene terahertz devices.     

Graphene-Based\ Waveguide Terahertz Wave Attenuator

We design an electrically controllable terahertz wave attenuator by using graphene. We show that terahertz wave can be confined and propagate on S-shaped graphene waveguide with little radiation losses, and the confined terahertz wave is further manipulated and controlled via external applied voltage bias. The simulated results show that, when chemical potential changes from 0.03 into 0.05 eV, the extinction ratio of the terahertz wave attenuator can be tuned from 1.28 to 39.42 dB. Besides the simplicity, this novel terahertz wave attenuator has advantages of small size (24?×?30 μm²), a low insertion loss, and good controllability. It has a potential application for forthcoming planar terahertz wave integrated circuit fields.     

二维材料异质结增强的硅基太赫兹光调制器

研究了石墨烯/氮化硼二维异质结增强的硅基太赫兹波光调制器。利用太赫兹波时域谱系统和实验室自主搭建的太赫兹波动态测试系统分别测试了808 nm激光对太赫兹波的静态和动态调制。当照射在太赫兹波调制器上的激光功率从0增加至500 mW时,平均太赫兹波透过率从58%下降到13%,静态调制深度最高达到76%（500 mW）。动态测试获得的最大调制速度为15 kHz (100 mW)。实验结果表明,与单层石墨烯增强的硅基调制器相比,石墨烯/氮化硼异质结可以更大地提高硅对于太赫兹波的调制深度,并提升调制速度。     

Tunable,Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators

We propose and investigate in detail a novel tunable, compact, room temperature terahertz (THz) emitter using individual microdisk resonators for both optical and THz waves with the capability of radiating THz field in 0.5–10 THz range with tuning frequency resolution of 0.05 THz. Enhanced THz generation is achieved by employing a nonlinear optical disk resonator with a high value of second-order nonlinearity (χ ⁽²⁾) in order to facilitate the difference-frequency generation (DFG) via nonlinear mixing with the choice of two appropriate input infrared optical waves. Efficient coupling of infrared waves from bus to the nonlinear disk is ensured by satisfying critical coupling condition. Phase matching condition for efficient DFG process is also met by employing modal phase matching technique. Our simulations show that THz output power can be reached up to milliwatt (mW) level with high optical to THz conversion efficiency. The proposed source is Silicon on Insulator (SoI) technology compatible enabling the monolithic integration with Si complementary metal-oxide-semiconductor (CMOS) electronics including plasmonic THz detectors.     

基于石墨烯的太赫兹光电功能器件研究进展

作为一种新型光电材料,石墨烯独特的能带结构和电子输运特性,使其与太赫兹科学有着密切的内在关系：石墨烯内部的等离子体振荡频率在太赫兹频段;人为调谐石墨烯的禁带宽度在0~0.3 eV时,正好覆盖太赫兹频段;光电导率的外部可控性等,这些特点使得石墨烯有望成为太赫兹频段新一代高性能设备研制的基础。最近的研究显示,石墨烯在太赫兹波产生、调控、检测等光电功能器件的研制中取得了很好的成果。重点介绍了基于石墨烯的太赫兹光电功能器件,包括太赫兹源器件、可控调控器件及检测器研究的最新进展,并对这一快速发展的研究领域进行了展望。     

基于石墨烯的太赫兹透明吸波器设计

透明太赫兹吸波器既可在太赫兹波段实现吸波功能,又对可见光透明,隐蔽性高,因此其在电磁隐形等领域具有广泛应用。文中设计了一种基于石墨烯的太赫兹双频吸波器,它由方形加枝节的石墨烯上层宽带吸波结构和石墨烯-ITO 嵌套形下层窄带吸收结构构成,实现了独立可调的双频吸波功能。经仿真调试,该吸波器能够通过改变石墨烯费米能,分别在1.98~3.64 THz 范围内调节实现90%以上宽频带吸收率和在4.6~4.9 THz 范围内调节实现96%以上吸收率。经验证,该吸波器具有极化不敏感、宽入射范围等优点。     

蝶形天线增强的HEMT室温太赫兹探测器

介绍了一种基于GaN/AlGaN高电子迁移率晶体管(HEMT)的高速、高灵敏度室温太赫兹探测器。在太赫兹波辐射下,HEMT源漏端产生直流光电流,并能被栅压灵敏地调控。探测器中新颖的蝶形天线设计使接收到的太赫兹电场得到显著增强,提高了探测器的响应度。通过测量探测器对不同偏振方向的太赫兹光的响应,有效验证了蝶形天线对太赫兹电场的增强作用。室温下,探测器的等效噪声功率约为5×10-10W/Hz21,平均响应度达42mA/W。实验结果表明,光电流的产生与二维电子气沟道的场效应特性和入射太赫兹波电场在电子沟道中的分布密切相关。自混频理论能很好地描述实验结果。