U-Boot在AT91RM9200上的移植及启动分析

采用U-Boot 1.1.2构建嵌入式系统的引导加载程序。在对U-Boot的启动工作机理和源码主要函数功能进行了简略分析后,针对基于AT91RM9200的目标板对U-Boot作了具体的修改和移植,并讲述如何设置环境变量,从而引导Linux内核启动。应用结果表明,移植后的U-Boot在目标板上运行良好,可成功引导Linux内核。     

基于PXA255的RedBoot启动分析及其移植

介绍了嵌入式处理器PXA255的结构特点和应用,研究了一种嵌入式系统引导、调试程序RedBoot。阐述了RedBoot／eCos的基本机构和特点,分析了它的原理和启动过程。并依据代码,详细分析了其在PXA255开发平台上的实现。研究了移植过程中的重点和难点问题,总结了移植的一般性方法,便于对Bootloader和PXA255的开发应用。     

U-Boot在基于ADSP BF533的嵌入式Linux系统上的移植

Boot Loader是嵌入式系统上电后运行的第一段代码,其性能的好坏直接影响到系统的稳定性、可靠性.以开放源码U-Boot为例,简要介绍了U-Boot启动机理.通过将其移植到基于BF533的开发板上,详细分析说明U-Boot的移植方法、过程,并验证了其在目标板上运行的可行性.     

U-Boot的分析与移植

介绍了嵌入式系统中U-Boot的基本工作原理,通过分析U-Boot的程序框架和重要数据结构,在JXARM9-2410-3嵌入式开发板上,实现了嵌入式系统中U-Boot的移植,能够完成嵌入式Linux系统内核的引导和文件系统的加载.     

U-Boot在S3C2440上的移植方法

Bootloader U-Boot功能齐全、应用广泛但移植到ARM微处理器S3C2440A上相对比较复杂.简介了常见的Bootloader,归纳了U-Boot的主要特征,分析了其运行过程,介绍了系统存储空间分布和基于S3C2440A微处理器为核心自主开发的嵌入式系统板硬件资源配置,给出了U-Boot在嵌入式系统板上的移植方法、移植过程和移植要点.最后对实验结果进行了测试.目前,U-Boot可以完成设计的功能并能够稳定的运行,为下一步移植Linux操作系统奠定了必需的基础.     

U-Boot在MPC8265平台上的移植与分析

如何根据开发板的硬件资源设计引导加载程序是嵌入式系统设计的重点与难点.为解决引导加栽程序的设计问题,针对一个基于MPC8265处理器的硬件系统平台,分析了U-Boot的源码结构组成和启动流程,并提出U-Boot的移植方法.该方法可广泛应用于其他处理器及嵌入式系统.应用结果表明,移植后的U-Boot-1.2.0在开发板上运行良好,可以成功稳定地引导Linux-2.6内核以及NFS根文件系统.     

U-Boot在基于S3C44B0开发板上的移植

Bootloader是嵌入式系统开发中的第一个环节,它将系统的软硬件紧密联系在一起,其性能的好坏对系统的稳定性有着至关重要的影响.U-Boot功能强大,可移植性好,适合作为S3C4480开发板上引导uCLinux的BootLoader.重点介绍了U-Boot的运行机理,结合代码详细分析了U-Boot的移植方法.并成功地将U-Boot移植到开发板上.     

基于ARM的嵌入式软件系统平台实现

ARM广泛应用于嵌入式处理领域,AT91RM9200是基于ARM920T构建的处理器芯片,该芯片支持片内引导和片外引导2种方式,通过片内引导完成U-Boot在目标平台的加载和运行。以U-Boot为基础,完成了VxWorks在目标平台上的移植和运行。通过U-Boot和BootRom两种方式分别实现了嵌入式软件系统平台的构建,并介绍了实现方法和步骤。     

U-Boot在ADSP-BF533上的移植

U-Boot是一个功能十分强大的Bootloader,目前已经运用到很多嵌入式系统中.ADSP-BF533处理器是ADI公司新推出的一款Blackfin系列DSP,详细介绍U-Boot在基于ADSP-BF533处理器嵌入式系统板上移植过程,并深入分析移植过程中的要点和难点:FLASH设备驱动、网卡设备驱动等.此次移植已经成功应用在企业产品的开发中,也可给相关工作的开发者提供参考.     

基于S3C2410A的嵌入式系统的U-Boot移植

嵌入式系统中Bootloader的设计与实现是非常重要的环节,而Bootloader的引导程序中最常用且功能最强大的就是U-Boot。详细分析U-Boot的基本工作原理和运行流程,着重讨论其基于S3C2410A芯片所搭建的在嵌入式系统上的移植。特别选取NAND FLASH作为硬件存储设备,并实现NAND FLASH上的直接启动,完成嵌入式系统中U-boot的移植和Linux系统内核的引导,有助于嵌入式系统的开发。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.