基于Laguerre滤波器等价设计的IIR宽带波束形成

常规IIR宽带波束形成器可以获得比FIR宽带波束形成器更好的性能,但其需要多极点的自适应调整过程,存在稳定性无法保证,计算复杂度较高等问题.本文提出一种新的基于IIR滤波器的宽带波束形成算法.该算法基于高阶Laguerre宽带波束形成器,利用双线性变换和函数束方法设计相应的低阶等价IIR宽带波束形成器.仿真实验及理论分析表明,该方法无需常规IIR宽带波束形成器的多极点自适应调整过程,在保证算法稳定性的同时,减少了计算复杂度,并提高了输出信干噪比(SINR).     

基于IIR开环滤波的导航接收窄带滤波器设计

针对快变场景中的卫星导航接收窄带干扰抑制问题,结合自适应滤波原理,提出了一种基于开环滤波的自适应陷波器设计方法,实现了导航接收系统中的窄带干扰自适应抑制,解决传统时域滤波器计算量大或收敛速度慢的问题。仿真结果表明,该算法比最优维纳滤波器的运算量低,相比LMS算法收敛速度快、性能好、窄带强干扰抑制能力优于30 d B。     

基于空-时子带结构的宽带波束形成

提出一种基于空域嵌套复合阵和时域多率子带相结合的空-时宽带自适应波束形器。子带的实现以通用参数滤波器组为基础。每个子阵的宽带波束处理器采用同一组FIR滤波器来实现,大幅减少了加权数目,同时子阵实现了并行处理,每个子阵工作在最低的采样速率下,进一步降低了处理器的运算量。仿真结果表明,此结构的处理器不仅能实现宽带波束形成,而且还大大降低了波束形成器的数据运算量。     

一种改进的宽带自适应波束形成器

针对宽带空时自适应波束形成中,增加抽头延迟线（TDL）数目导致空时维度增大从而计算量增加的问题,提出了一种改进的宽带自适应波束形成器。此改进结构基于Frost空时自适应处理的线性约束最小方差（LCMV）准则,抽头数目为空时Frost结构的一半,将阵列分为两类通道,奇通道和偶通道,奇通道选择抽头奇数阶时延间隔,偶通道选择抽头偶数阶时延间隔,在保证具有相同干扰性能基础上可大大降低空时维度与运算量。在理论上进行了干扰抑制性能分析,证明了改进结构与Frost空时结构干扰抑制之后的输出期望功率相同,亦证明了在阵元数目满足大于等于4的偶数时,其抗宽带噪声干扰后干扰剩余功率也与Frost空时结构的相同,影响两种结构输出信干噪比（SINR）的只有噪声部分。最后对比仿真证实了此改进结构的性能与理论分析的正确性与一致性。此结构可应用于宽带空时自适应处理中,具有一定的高效性。     

基于传声器阵列的近场宽带波束形成方法

提出了一种适合于近场宽带传声器阵列处理的空时子带波束形成新方法。该方法通过将一个空域子带阵列和时域子带多速率滤波器组合并来同时获得空域和时域两种子带系统的优点。计算机仿真比较了其与全带自适应波束形成方法的性能,结果表明该方法对干扰有较强的抑制能力,改善了宽带波束形成频域不一致问题,并且能够并行处理,为实际语音通信系统的应用提供了一种有利途径。     

基于广义旁瓣对消器的Laguerre宽带波束形成

基于Frost 结构的Laguerre 宽带波束形成器可以获得比FIR 宽带波束形成器和IIR 宽带波束形成器更好的性能,但其需要单极点的最优求解过程,存在计算复杂度较高及收敛速度较慢等问题.该文提出一种基于广义旁瓣对消器(Generalized Sidelobe Canceller, GSC)的Laguerre 滤波器宽带波束形成算法.该算法首先建立基于GSC结构的Laguerre 宽带波束形成器模型,然后利用最小二乘方法给出一种低复杂度的极点求解方法,最后利用归一化最小均方根误差方法实现宽带波束形成.仿真实验及理论分析表明,该方法无需基于Frost 结构的Laguerre 宽带波束形成器单极点最优求解过程,在保证算法较高的输出信干噪比的同时,减少了计算复杂度,提高了收敛速度.      

最大稀疏稳健恒定束宽波束形成器设计

为了降低宽带阵列恒定束宽的实现复杂性,在分析宽带阵列稀疏性的基础上,构造了以阵元和抽头延迟线(TDL, tapped delay line)稀疏性的凸组合为目标函数,满足恒定束宽约束的波束形成器优化模型,降低了所需的阵元和TDL个数。引入重加权机制,通过序列凸优化,使稀疏性递增并收敛到最大值,证明了保证波束形成器稳健性的范数约束与最大TDL稀疏目标函数之间的等价性。仿真结果表明,可用较少的阵元及TDL个数获得相同的恒定束宽性能,具有工程实用价值。     

基于卫星导航定位系统自适应抗干扰控制

在全球卫星导航系统抗干扰问题的研究中,自适应波束形成技术很好地解决了与信号不同来向的干扰的抑制问题。但对与信号同向的窄带干扰抑制程度不够,同时会滤除部分导航信号。针对以上问题,提出了一种改进的自适应波束干扰抑制算法。首先,通过级联IIR格型陷波器预测并抑制与信号同向的窄带干扰,然后,利用基于直接数据域自适应波束形成技术抑制剩余的宽带干扰。该改进算法能够有效的滤除窄带和宽带干扰,提升卫星导航系统的抗干扰性能,并在实际卫星通信应用中更具处理的实时性。最后,通过仿真实验证明了该算法的可行性。     

一种稳健的自适应波束形成器

当信号噪声比超过一定的门限时,线性约束自适应波束形成器对天线的幅相误差有很高的敏感度,即使在误差很小的情况下,期望信号也会如同干扰一样被抑制掉。该文通过对广义旁瓣相消器的阻塞矩阵加以改进,提出了一种对阵列天线误差有良好稳健性的自适应波束形成器。该方法基于广义旁瓣相消器结构,可方便地进行部分自适应,降低运算量。     

面向二元麦克风小阵列改进的广义旁瓣抵消器语音增强算法

二元麦克风小阵列在手机、助听器等受空间、成本以及运算能力限制的设备中被广泛研究用以提高目标语音质量。二元麦克风小阵列中语音增强算法主要包括波束形成方法以及相干性滤波器方法。波束形成方法的思想是利用目标声源相对阵列的位置关系获取相应的时域和空域信息,可以保留目标声源方向的信号而抑制其他方向的干扰信号;相干性滤波器方法则通过阵元间不同信号的相关性进行噪音抑制。考虑这两种类型方法的优点,本文提出一种面向二元麦克风小阵列改进的广义旁瓣抵消器语音增强算法,通过在广义旁瓣抵消器的固定波束形成支路上使用相干性滤波器,提高固定波束形成输出信号的信噪比,然后在广义旁瓣抵消器自适应支路利用阵列的时域和空域信息对固定波束形成支路输出的信号中残余噪音进行估计,进而获得增强后目标输出信号。仿真和实际试验表明,本文提出的算法明显优于单独使用小阵列波束形成算法和相干性滤波器算法。      

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.