PMF温度稳定性的研究

光纤陀螺仪中的光纤环需要采用温度稳定性高的保偏光纤（PMF）。除了PMF预制棒的结构设计外,光纤内涂覆材料的性能对PMF温度稳定性也有重要的影响。讨论了内涂覆材料的参数、涂覆层的固化度对PMF温度稳定性的影响,并建议采用内涂覆层固化度控制的方法来获得温度稳定性良好的PMF。     

光纤陀螺光纤环温度瞬态效应的模拟仿真

对光纤陀螺(FOG)中的光纤环建立了三维柱坐标模型,通过ANSYS Workbench软件,结合实际检测到的光纤环温度,采用有限元分析法对光纤环在各种温度条件下的内部温度场分布进行了模拟仿真,得到光纤环中各层、各圈的时间-温度变化曲线;利用光纤环中温度场分布的仿真结果,及温度瞬态效应相关的热致非互易相位变化理论,编写相关算法,计算出光纤环由温度变化带来的温度漂移;将模拟仿真的温度漂移与陀螺实际输出进行对比,验证了所有模拟仿真工作的正确性,从而对绕环工艺起到理论指导的作用。     

基于光纤陀螺温度漂移误差补偿方法研究

惯性导航系统中光纤陀螺的漂移受温度变化影响显著,导致其在导航系统中的应用受到各种制约。该文提出了一种软件上的温度补偿法,建立基于光纤陀螺多参量联合多项式温度补偿模型,并设计相应的试验方法对陀螺仪的漂移进行了温度补偿。试验证明,提出的温度模型准确有效,可补偿因温度变化引起的光纤陀螺仪的漂移影响,达到提高系统的导航精度及温度适应性的目的。     

基于布里渊散射的保偏光纤环应力分布特性研究

保偏光纤环是光纤陀螺的核心部件,其性能受温度的影响较大,主要表现为热致互易相移,影响光纤陀螺的精度。针对该问题,提出采用应力分布法测量光纤环的温度非互易相移。通过对不同温度点的光纤环应力分布数据进行分析,建立光程对中数学模型,基于该模型对光纤环的尾纤进行适当调整,改进其光学对称性,降低由温度变化引起的非互易相移。通过陀螺整机实验表明:该方法能大幅提高光纤陀螺的精度,过程简单方便,对成品光纤环具有一定的修复作用,提高了成品率,实用性较好。     

强调原始创新,突出成果转化——贺《军医进修学院学报》创刊30周年

针对某型捷联惯导系统中光纤陀螺仪的输出信号随温度漂移严重的问题,使用径向基函数(RBF)神经网络建立温度补偿模型.神经网络的结构为输入层和输出层各有一个节点,中间隐层含有4个节点,隐层节点的聚类中心均匀分布在温度的变化范围之内.实验结果表明,该方法可有效地将光纤陀螺仪中的温漂误差减小1个数量级以上,补偿效果明显.     

FOG光纤环三维温度瞬态模型

提出了光纤陀螺光纤环三维温度瞬态模型解析式,用于求解先纤环径向、轴向和周向温度瞬态效应所致的非互易性相位、速率和角度误差.相比传统的二维光纤环模型只能分析均匀径向温度瞬态效应,此三维模型改善了求解能力,提高了准确性.采用有限元方法数值求解三维温度瞬态模型解析式,得到了不同温度激励下的热致速率和角度误差.最后进行了光纤环温度激励的相应实验,实验结果与光纤环三维温度瞬态模型数值计算结果一致,验证了光纤环三维模型的准确性.     

光纤陀螺温度补偿的实验研究

本文在理论分析光纤敏感环热致非互易特性的基础上,针对采用以ＱＵＡ方法 绕制的光纤敏感环的光纤陀螺,对于由外界环境温度变化而导致的光纤陀螺输出噪声进行数值模拟,并给出实施温度补偿的实验方案与相应结果。     

光纤陀螺环热扩散延迟响应模型及补偿技术研究

基于热扩散机理,研究了光纤陀螺中光纤环热扩散非互易相位误差导致的零漂的延迟响应特性,发现了延迟时间的温度相关性,获得了光纤环零漂延迟补偿模型。搭建高精度光纤陀螺实验系统,在不同温度段,采用近似"方波"形台阶温变激励,验证了热致非互易性相位误差的延迟特性,并获得了实验光纤环的模型参数。进行了光纤陀螺全温变零偏测试,实验结果表明采用改进模型可获得更好的零偏补偿效果,验证了新建模型的正确性和有效性。     

基于温度补偿高双折射光纤环镜的边缘滤波解调方法

提出了一种光纤光栅传感解调新方法。系统由1个3dB耦合器、1个传感光纤布喇格光栅、1个双折射光纤环镜和1个探测器构成,高双折射光纤环镜作为边缘滤波器。光纤光栅波长的线性解调带宽为3．6nm。对双折射光纤环镜的温度补偿进行了实验研究,实验表明,封装的高双折射光纤环镜能够补偿高双折射光纤环镜的温度漂移。补偿前的高双折射光纤环镜波长随温度漂移为2．3nm／℃,补偿后的双折射光纤环镜波长随温度漂移为0．005nm／℃,远小于未补偿的双折射光纤环镜波长随温度漂移。     

光纤陀螺技术及其应用

本文介绍了惯性仪表光纤陀螺仪的基本原理及其分类,分析了光纤陀螺仪的关键技术,同时,根据光纤陀螺仪在军用和民用领域的应用情况介绍了其发展状况。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.