超高清电视技术的专利申请分析

介绍了超高清电视的含义、超高清电视的中外发展状况和专利申请情况,利用中国国家知识产权局的专利检索与服务系统进行相关专利的检索和专利分析,主要从全球历年专利申请量、技术原创国申请量分布、重要申请人的历年专利申请量以及专利申请目标国分布几个方面来对相关专利进行定量分析,对超高清电视的过去、现在及未来的发展状况进行分析.     

虚拟环绕声技术的专利申请分析

介绍了虚拟环绕声的定义、虚拟环绕声技术的中外发展状况和专利申请情况,利用中国国家知识产权局的专利检索与服务系统进行相关专利的检索和专利分析,主要从全球历年专利申请量和技术生长率、技术原创国申请量分布、专利申请目标国分布几个方面来对相关专利进行定量分析,对虚拟环绕声技术的应用前景进行了解析.     

虚拟环绕声技术的专利申请分析

介绍了虚拟环绕声的定义、虚拟环绕声技术的中外发展状况和专利申请情况,利用中国国家知识产权局的专利检索与服务系统进行相关专利的检索和专利分析,主要从全球历年专利申请量和技术生长率、技术原创国申请量分布、专利申请目标国分布几个方面来对相关专利进行定量分析,对虚拟环绕声技术的应用前景进行了解析.     

网络电视机顶盒专利分析

网络电视机顶盒是网络电视系统的重要设备,当前网络电视的用户越来越多,网络电视机顶盒正在走进千家万户.为了探寻网络电视机顶盒的技术发展方向,透过专利的视角来追踪网络电视机顶盒技术的起源、发展及趋势,通过申请量、技术原创国、技术目标国、重要申请人、重要技术分支等方面的分析比较,梳理出网络电视机顶盒技术在国内外的专利布局情况,力求为国内相关产业的发展提供一些有益的帮助.     

IPTV机顶盒的中国专利申请状况分析

对IPTV机顶盒的中国专利申请状况进行了分析,从历年申请量、主要申请人、专利申请类型及技术领域分类等方面着手,探讨了IPTV机顶盒技术的发展现状,并根据检索结果进行了分析,最后对我国IPTV机顶盒行业的发展提出了建议.     

网络电视中内容管理相关技术的专利状况分析

近年来,随着网络通信技术的迅速发展,网络电视也获得了高速的应用和发展。各大企业和研究机构等纷纷展开了网络电视相关技术的专利部署。针对网络电视中内容管理相关技术的特点、专利申请情况、重要申请人的专利技术特点、专利发展趋势进行了详细的分析和研究。通过专利状况分析,希望对该领域的业内人士有所帮助。     

人脸识别领域中国专利申请现状分析

对智能识别领域中的人脸识别技术的中国专利申请进行检索,分析了历年专利申请量和申请趋势、申请人构成和地区分布、核心申请人状况,按照技术分支将其分为人脸检测、人脸跟踪、人脸表征、人脸识别及应用等,探讨我国人脸识别的专利发展趋势,为国内智能识别企业及研究机构提供专利信息和技术支持,确立专利申请的方向.     

“飞猫”技术的专利申请分析

近年来,“飞猫”技术得到了迅速的发展,与此同时,关于“飞猫”技术的专利申请也在迅速的增长。本文在构建专利数据集的基础上,针对“飞猫”技术在全球及国内的专利申请进行了专向检索,并对历年申请量变化趋势、主要技术原创国别（地区）、主要申请人情况进行了较为详细的分析,对国内企业相关产品的研发具有一定指导意义。     

基于ZigBee的家庭网络专利检索策略

智能家庭网络近年来发展迅速.以德温特数据库检索统计的数据为基础,从专利申请量、申请人国别分布和发明人所关注的技术内容多个角度分析了家庭网络的专利现状和发展趋势,并在此基础上提出了家庭网络相关专利的检索方法.     

可穿戴设备领域的中国专利分析

随着谷歌、苹果、三星以及微软等科技巨头相继推出可穿戴设备,该领域正成为研发热点,作为未来最具发展潜力的产业之一,可穿戴设备的相关专利布局早已展开.基于在中国申请的专利文献样本数据,针对可穿戴设备领域的特点、历年的专利申请量、应用领域及技术组成、主要专利申请人等方面对可穿戴设备领域中国专利申请状况进行了分析研究,希望对国内相关企业的技术发展起到一定的作用.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.