非傍轴截断双曲余弦高斯光束的M2因子

基于功率密度的二阶矩方法,对非傍轴截断双曲余弦高斯(ChG)光束的束宽、远场发散角和M2因子进行了研究.数值计算结果表明,非傍轴截断ChG光束的M2因子不仅与截断参数δ、偏心参数α有关,而且与初始束腰宽度和波长之比w0/λ有关.在δ足够小时,M2因子可小于1.当δ→ 0时,远场发散角趋于渐近值63.435°.对于α=0(Ω0=0)和δ→∞的特例,我们的结果分别退化为非傍轴截断高斯光束和非傍轴无截断ChG光束的M2因子.     

非傍轴余弦平方-高斯光束的传输特性

基于功率密度的二阶矩方法,数值模拟研究了非傍轴余弦平方-高斯光束的束宽、远场发散角和M2因子.计算结果表明:1)束腰宽度W0(0)随w0/λ的增大而增大.当w0/λ较大(w0/λ≥0.5)时,束腰宽度随着偏心参数的增大而减小. 2)当w0/λ→0时,远场发散角趋于渐近值θ0max=63.435°,与偏心参数α无关.3)在非傍轴范畴,余弦平方-高斯光束的M2因子不仅与偏心参数α有关,而且还与初始束腰宽度和波长之比w0/λ有关.当w0/λ足够小时, M2因子可小于1.对给定的偏心参数α,M2因子随w0/λ的变化并非总是单调的.M2因子随w0/λ的增大而增大,当达到最大值后又逐渐减小,最后渐近趋于一稳定值.     

TE矢量高斯光束的二阶矩传输

运用光束传输的非傍轴矢量矩理论,对TE矢量高斯光束的传输进行了研究,给出了束腰、横向发散角和光 束传输因子的积分表达式。基于能流二阶矩定义的横向光束宽度在传输过程中服从简单的双曲线变化规律。数 值计算表明,在高度非傍轴情形下,由于TE偏振导致两个横向存在不同的光束传输特性,且最大的横向发散度超 过了非傍轴标量高斯光束的发散度极限63.43°,接近于90°,这与波动光学理论相符合,其中x方向上的发散度略 比y方向上的大。而对于傍轴情形,在非傍轴标量高斯光束傍轴化条件下,TE矢量高斯光束的传输可简化为横基 模傍轴标量高斯光束,稍有区别的是其光束传输因子始终保持略大于1,且永远不能精确地等于1。     

非傍轴双曲余弦高斯光束质量因子的研究

运用非傍轴标量光束的光强二阶矩理论,计算了非傍轴双曲余弦高斯光束的束腰半径、远场发散角、质量因子,并与傍轴双曲余弦高斯光束的质量因子进行了比较研究。数值计算表明:当双曲余弦高斯光束束腰半径较大时,傍轴与非傍轴理论计算的光束质量因子变化规律完全相同;束腰半径较小时,傍轴理论的计算结果有较大误差。     

非傍轴双曲正弦高斯光束质量因子M2的研究

在标量光场角谱衍射理论的基础上,应用精确光强定义下的非傍轴标量光束的光强二阶矩理论,计算了非傍轴双曲正弦高斯光束的束腰半径、远场发散角、质量因子,并与傍轴双曲正弦高斯光束的质量因子进行了比较研究。数值计算表明,当双曲正弦高斯光束束腰半径较大时,传统光强定义下的光强二阶矩理论近似成立,傍轴与非傍轴理论计算的光束质量因子变化规律完全相同;束腰半径较小时,傍轴理论计算的结果有较大误差,必须采用精确光强定义下的非傍轴光束质量因子的定义作修正。     

非傍轴截断余弦-高斯光束的轴上光强

基于瑞利衍射积分公式,以非傍轴截断余弦-高斯(CoG)光束为例,对非傍轴截断光束的两种光强表示式,即传统的光强定义和光强的精确表述进行了比较研究.数值计算结果表明,两种定义之间的差异与截断参数,偏心参数,wo/λ和z/λ有关,其中w0,λ和z分别别为束腰宽度,波长和传输距离.     

非傍轴厄米-正弦-高斯光束的特性

为了研究厄米-正弦-高斯(HSiG)光束在非傍轴情形下受参量影响的特性,基于光强二阶矩理论,经过一系列复杂的数学计算,得出了非傍轴厄米-正弦-高斯光束的远场发散角、束腰宽度以及光束传输因子的解析式,并通过数值模拟,得到了它们与离心参量的关系。结果表明,在束腰宽度与波长比取值逐渐减小时,随着离心参量趋于0,当阶数为奇数和偶数时.发散角分别趋于63.435°和73.898°。束腰宽度和光束传输因子随参量的增加呈现较大的起伏,非傍轴情形下的光束传输因子取值与傍轴情况有很大的不同,其受参量影响不仅可以小于1,甚至趋于0。     

一维会聚非傍轴高斯光束焦线附近的光场特性

傍轴近似常被用于光束传输理论的表达,数值计算常被用于非傍轴光束的传输特性分析。为了使一维会聚非傍轴高斯光束的传输特性更加简明,本文基于倾斜因子由观察方倾斜角余弦平方根表达的非傍轴衍射积分公式,给出了符合行波场辐射能守恒定律的一维会聚非傍轴高斯光束的焦平面光场分布表达,同时给出了焦点附近一维会聚非傍轴高斯光束的轴上点光强和相位特性表达。当一维会聚非傍轴高斯光束的最大倾斜角远大于高斯光束的远场发散角时,合理的观察方倾斜因子可将高斯光束传输特性从傍轴领域延拓到非傍轴领域。本文阐明了一维会聚非傍轴高斯光束的传输特性,并验证了用观察方倾斜角余弦平方根表达观察方倾斜因子的合理性。     

非傍轴旋转对称拉盖尔-高斯光束的远场发散角

基于功率密度的二阶矩方法,推导出了非傍轴旋转对称拉盖尔-高斯(LG)光束远场发散角的解析公式,并表示为伽玛函数的幂级数求和形式。计算结果表明,当初始束腰宽度和波长之比w0/λ趋于0时,对任意非傍轴旋转对称LG光束,远场发散角趋于渐近值63.435°,与阶数无关。对于p=0的特例,则退化为非傍轴高斯光束的结果。     

对激光光束质量一些问题的认识

从对激光光束质量研究进展开始，讨论了在傍轴和非傍轴范畴内激光光束质量的一些问题，主要是非傍轴光束的光束质量评价。光束传输的非傍轴矢量二阶矩理论可用于计算多种非傍轴光束的M2因子，但对M2因子的物理解释却有困难。例如，在非傍轴范畴，M2因子依赖于束腰宽度与波长之比，并可小于1。但远场发散角之值可趋于90°，这将导致很大的M2因子值。另一方面，若将公式中的光强用时间平均坡印廷矢量z分量代替，桶中功率(PIB)，或等价地，?茁 参数可推广用于评价非傍轴光束的远场光束质量。PIB表征了光束功率的可聚焦能力，是一种简明、直观评价不同激光光束的方法。然而，在?茁参数的公式中的束宽是按功率含量百分比定义的，因此双曲线传输规律不再严格成立。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.