一种提高连续波雷达目标检测精度的方法

为线性调频连续波雷达在多个运动目标信息接近的情况下识别出目标,提出了一种利用FFT+CZT+相关系数的算法。由于线性调频连续波雷达本身存在距离 速度耦合的问题,在测量多个运动目标的情况下会出现大量的虚假信息。从而造成了目标误检率高的问题。该算法利用FFT+CZT将上下扫频差拍信号频谱进行细化,然后计算它们的相关系数,由相关系数确定频谱的相似程度,从而完成上下扫频差拍信号的频谱配对。同时对频谱进行CZT变换的处理,也提高了雷达多目标测距测速的精度。通过Matlab的仿真实验,结果表明提高测距测速精度的同时也降低了雷达的误检率。     

噪声对Chirp-Z变换的LFMCW系统测距算法的影响

本文介绍了用Chirp-Z变换提高液位测量精度的算法原理,然后仿真出线性调频连续波雷达(LFMCW)在快速傅里叶变换(FFT)和线性调频Z变换(CZT)给回波信号加一定噪声后的测距精度,同时分析并比较了两种测距方法对测距精度造成的影响。理论计算和数字仿真结果表明,Chirp-Z算法可显著提高计算效率和液面雷达的测距精度。     

一种提高数字化连续波雷达测距性能的新方法

通过对连续波双频测距与多频测距基本原理的分析,针对双频测距存在最大不模糊距离与测距精度相互矛盾的局限性,并考虑到多频测距对正确解模糊所需信噪比较高这一缺点,同时结合双频测距与多频测距的优势,提出了一种从多频到双频转换的连续波测距新方法。文中对这种新方法的测距步骤进行了详细论述,并进行了仿真分析,仿真结果证明了该方法的有效性。     

双频测距方法研究

建立了一个连续波极近程目标探测系统的模型,研究了双频连续波测距方法原理,对于高速近距离目标的探测进行了仿真,对双频测距和测速的精度做了统计和分析,验证了方法的稳定性和有效性,并对算法提出了一定的改进。     

多频连续波雷达两种测距算法研究

该文分析了连续波雷达参差多频测距算法的局限性,提出了多频连续波雷达的两种测距算法,即多频到双频测距法和二次相差法,并介绍了它们的基本原理。最后对两种方法进行了对比,并进行了仿真。仿真结果表明, 两种测距算法都达到了比较高的测距精度,在最后双频对应的最大不模糊距离相同的基础上,两种算法的测距精度相当。     

基于改进LFMCW雷达的多目标识别算法

线性调频连续波（LFMCW）雷达在单目标情况下可以根据上下扫频段的两个差频信号准确探测目标距离信息及其径向速度。在多目标情况下,上下扫频段的差频信号由于缺乏关联信息无法准确配对,导致虚假目标数目远大于真实目标数目。为准确识别真实目标,本文提出一种改进LFMCW波形,在LFMCW波形前加上两段频率值互异的恒频波段,两段恒频波段组成双频调制连续波（FSK-CW）,可得到运动目标的距离信息及其径向速度用于剔除虚假目标。仿真结果表明,基于该波形的雷达在多目标情况下能够准确识别目标,且测速和测距精度都较高。     

量化噪声对数字化多频连续波雷达测距性能的影响

对基于FFT数字比相技术的多频连续波雷达，量化噪声必然对雷达的测距精度具有一定的影响。文中推导出考虑量化噪声时多频连续波雷达测距误差均方根的计算公式，并通过理论分析与仿真结果，验证了量化噪声对测距精度的影响，指出在A／D输入信噪比一定时，高量化位数对测距精度的影响较小。     

基于二次差频的多频连续波测距方法研究

多频测距解模糊的实现方式通常有两种:二次差频和参差双频.二次差频测距具有原理简单、接收机和发射机设计相对容易等优点.本文对二次差频测距的基本原理进行了详细推导,并对正确解模糊对信噪比的要求给出了理论分析,最后通过仿真实验验证了该方法的有效性,为多频连续波测距雷达的设计提供了一定的理论依据.     

连续波战场侦察雷达

本文分析了连续波伪噪声雷达的测距测速性能以及作为战场侦察雷达的特点,文后并展望了连续波伪噪声雷达在战场侦察领域内应用的前景。     

LFMCW雷达数字化测距测速的工作参数设计

LFMCW雷达测距和测速的应用中,测量精度是主要考虑的因素.由于需兼顾距离和速度的测量精度要求,雷达系统参数和信号处理技术指标的设计就变得复杂.从雷达工作原理出发,在数字化信号处理中分析了时域的测距测速精度与频率分辨力的关系,着重讨论了距离分辨力与距离、速度测量精度要求的关系;提出了雷达系统工作参数设计的方法步骤,从而满足较高的测距和测速精度要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.