基于SOI工艺的二极管瞬时剂量率效应数值模拟

为研究SOI MOS器件中寄生PN二极管在瞬时剂量率辐射下产生的光电流效应,采用TCAD工具,对0.13μm SOI工艺的PN二极管进行建模,数值模拟了二极管光电流变化与不同瞬态γ剂量率辐照之间的关系。通过模拟PN+型、P+N型两种二极管结构在不同偏置电压、不同剂量率辐射下的抗瞬时剂量率辐射能力,可以得出当瞬时剂量率为1×1014rad(Si)/s时,二极管在辐照下产生的光电流增量为辐照前的20%左右。该结论为集成电路器件的抗瞬时剂量率设计与仿真提供了数值参考。     

阳极氧化法显示InSbPN结剖面

PN结深度是制备半导体器件的所需重要参数之一。要测量结深,通常须把结剖面显露出来;一般采用的化学染色法,对于很多半导体都是适用的,并已成功地用于PN结研究,但是很难显示InSb的结剖面。IuSb晶片在KOH、NaOH等电解液中阳极氧化时,其氧化速率与样品掺杂浓度密切     

β辐射伏特效应电池内建电场厚度设计

计算了放射源在半导体中沿厚度方向的能量沉积,并以此计算β辐射伏特效应电池的理想短路电流。通过对比实测短路电流和理想短路电流可以得到β辐射伏特效应电池PN结内建电场的扩散长度。在上述基础上,本文给出了β辐射伏特效应电池内建电场厚度设计原则： 放射源在半导体中能量沉积厚度和PN结内建电场中载流子的扩散长度两者中较小的应作为β伏特效应电池内建电场厚度设计值,如果沉积厚度远远大于载流子扩散长度,则说明多结结构较适合该类β伏特效应电池果,多结的结数应约为沉积厚度与载流子扩散长度的比。     

GT322型全金属化耦合封装InGaAs/InP平面PIN光电二极管

(一)简要工作原理当该光电二极管的光敏区受到一定波长的光照射时,半导体吸收层中便产生光生载流子。在 PN 结反向偏置时,光生载流子在电场作用下漂移通过耗尽层,在外电路中产生光电流,实现光电转换。     

短沟道无结柱状围栅MOSFET的解析模型

通过在柱坐标系下求解二维泊松方程,建立了短沟道无结柱状围栅金属氧化物半导体场效应管的电势模型,并推导了阈值电压、亚阈值区电流和亚阈值摆幅的解析模型。在此基础上,分析了沟道长度、沟道直径和栅氧化层厚度等参数对阈值电压、亚阈值区电流和亚阈值摆幅的影响。最后,利用Atlas软件对器件进行了模拟研究。结果表明,根据解析模型得到的计算值与模拟值一致,验证了模型的准确性。这些模型可为设计和应用新型的短沟道无结柱状围栅金属氧化物半导体场效应管提供理论基础。     

用LED做触摸开关

<正> 对于发光二极管——LED,如今可能连小学生都知道。但用 LED 做触摸开关,可能知道的人就不多了。本文就来详细介绍一下。基本原理最基本的原理是基于半导体 PN 结的光电效应。LED 虽然也有 PN 结,但它的用途主要是作为发光元件而不是光电池。因为其在光照时所能产生的光电流十分有限,所以一般都不把它应用为光电元     

正偏PN结光照实验

文献指出“理想PN结光照下的电流等于光生电流与无光照下的PN结正向注入电流之差。”Vs电压是光电流在Rs负载电阻上的压降,相当于PN结正向偏压。实验证明,这个结论不正确,应该修正。     

PN型半导体电特性分析

基于PN结半导体的理论知识,详细的介绍了PN结半导体的工作原理,通过实验描绘出了PN结伏安特性曲线,并利用基本理论知识对大学实验中＂非线性电阻元件＂的伏安特性进行解释。     

基础元件介绍——晶体三极管

晶体三极管,是半导体基本元器件之一,具有电流放大作用,是电子电路的核心元件。三极管是在一块半导体基片上制作两个相距很近的PN结,两个PN结把整块半导体分成三部分,中间部分是基区,两侧部分是发射区和集电区,排列方式有PNP和NPN两种。从外表上看两个N区(或两个P区)是对称的,实际上发射区的掺杂浓度大,集电区掺杂浓度低,且集电结面积大,基区要制造得很薄,厚度约在几个微米至几十个微米。如图1从三个区引出相应的电极,分别为     

激光诱导掺杂

本文用N型硅片置于充有BBr_3蒸气的气室中,用308nm XeCl准分子激光垂直照射。BBr_3在紫外激光作用下分解得硼原子,沉积在硅片表面,并在激光热量作用下在晶格中扩散,形成PN结。对该激光化学掺杂过程的激光剂量、掺杂深度以及光电池的光电流密度与电压的关系、光电灵敏度光谱特性等一系列主要特性进行了研究。     

全色波段硅双结型色敏器件的研制

通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。通过选择不同的器件结构和工艺条件，得到了色敏器件对蓝紫光的响应，完成了金色波段硅双结型色敏器件的研制。     

一种新型偏置栅MOS 管漂移区表面电压 和电场的分析模型

本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种新的分析模型，借助数学推导得到该模型的计算方程，通过仿真曲线图能清楚地看到它们之间的变化关系，同时说明提高偏置栅MOS管击穿电压的方法。     

对"四论注入光敏器件的物理基础"一文的商榷

利用受光PN 结伏安特性方程,分别对受光PN 结的光电流输出、注入电流输出和零电流输出三种情况进行了讨论,进一步对注入光敏器件的物理基础进行探讨,并对一些实验问题进行讨论。     

双掺硅单晶及其P-N结研究

按照一定的掺杂比例制备了一种双掺硅单晶。单晶片经热处理后形成的P-N结具有结深浅、均匀、杂质浓度分布不同于扩散结和离子注入结等特点。本工作对P-N结形成的规律进行了理论和实验研究,结果十分吻合。对P-N结的基本特性和光学性能的研究说明:这种双掺硅形成的P-N结有可能用于制作光电器件、集成电路、太阳能电池和某些特殊器件。结果还有助于对硅表面反型的机构及界面问题的进一步认识。这项研究工作还提供了一种新的获取P-N结的工艺方法,这种方法在制造某些器件和集成电路时,工艺将大为简化。     

An analytic model for the MIS tunnel junction

A comprehensive analytic model describing current flow in the MIS tunnel junction under steady-state conditions is developed. The tunnel junction is viewed as imposing boundary conditions on the usual set of differential equations governing the electrostatic potential and carrier distributions within the semiconductor. These equations are then solved using the approximation techniques applied in conventional p-n junction theory. Full Fermi-Dirac statistics are used where necessary in the model, and surface states are treated using a Shockley-Read-Hall approach. In computing the band-to-metal tunnel currents, it is assumed that each valley in the conduction band and peak in the valence band can be assigned a single tunneling probability factor describing all transitions between that valley or peak and the metal. On making the above approximations, it is found that the state of the junction is described by two coupled nonlinear algebraic equations, which can be solved by routine iterative techniques. The model is applied to generate current-voltage characteristics for a minority-carrier AI-SiOx- pSi diode, operated both in the dark and as a solar cell, and for a negative barrier AI-SiOx-nSi contact exhibiting photocurrent multiplication. The results obtained are in good agreement with those predicted by more precise numerical methods.     

A normalized analytical solution for the capacitance associated with uniformly doped semiconductors at equilibrium

A normalized solution for determining the capacitance associated with uniformly doped semiconductors at equilibrium is presented here. The present formulation allows the application of this solution to both the MIS surface problem as well as PN step junction problem under equilibrium conditions, subject to Boltzmann approximation. For the surface case the results are in normalized analytic form in agreement with previous analyses. For the junction case a better estimation of the depletion layer thickness results in an analytic expression which performs better than that based on the depletion approximation.     

CuS纳米掺杂聚合物光伏器件中的电荷传输

制备了CuS纳米颗粒掺杂聚合物MEH-PPV的光伏器件.研究了3种MEH-PPV/CuS掺杂比例(1∶1.00、1∶1.25、1∶2.50)光伏器件的光电流响应谱与动态双脉冲光电流响应,结果表明:CuS良好的导电性可以改善器件中的载流子传输,从而提高光电流响应值;在较低的CuS纳米颗粒掺杂浓度下,MEH-PPV与CuS纳米颗粒间形成的界面有可能造成电荷积累,会直接影响到光电流响应值;在CuS纳米颗粒掺杂浓度较高时,电荷积累现象基本消失,这是因为高浓度时形成的聚集相改善了两种载流子的传输,抑制了MEH-PPV/CuS界面的电荷积累.     

Nd:YAG连续激光诱导下InP的Zn掺杂

Nd:YAG连续激光辐照在表面蒸有Zn薄膜的n-InP片上,用激光诱导的方法实现Zn在InP中掺杂。形成PN结。用电化学C-V方法和扫描电子显微镜对辐照后的样品进行分析研究,给出激光辐照功率、辐照时间等工艺参数对结深、浓度分布影响.在n-InP片表面得到受主浓度分布均匀、高掺杂（～1019cm-3）、浅结（～1μm）的P-InP。初步分析其掺杂机理是激光诱导下所形成的合金结过程。     

硅PIN光电二极管γ电离脉冲辐射的数值模拟

分析了γ电离脉冲辐射诱发硅PIN光电二极管产生光电流的机理.建立了硅PIN光电二极管的器件物理模型以及γ电离脉冲辐射效应模型;运用MEDICI软件,进行了辐射效应数值模拟计算.得出了γ电离脉冲辐射剂量率在10°～109Gy(Si)/s范围内,诱发硅PIN光电二极管光电流变化的初步规律.对比了辐射效应数值模拟结果与国外相关文献给出的辐照实验结果.

Abstract：

The mechanism of photocurrent of Si PIN photodiode induced by γ ionization pulse radiation is analyzed.The device physics and γ ionization pulse radiation models are established to simulate photocurrent of Si PIN photodiode by MEDICI software.The primary regularity of photocurrent of Si PIN photodiode is concluded by γ ionization pulse radiation with the dose rate of 10~0～10~9 Gy (Si)/s.The Simulation results are in agreement with the experimental results given in correlative literatures.     

Direct Laser Patterning of a 2D WSe2 Logic Circuit

Carrier doping is the basis of the modern semiconductor industry. Great efforts are put into the control of carrier doping for 2D semiconductors, especially the layered transition metal dichalcogenides. Here, the direct laser patterning of WSe₂ devices via light-induced hole doping is systematically studied. By changing the laser power, scan speed, and the number of irradiation times, different levels of hole doping can be achieved in the pristine electron-transport-dominated WSe₂, without obvious sample thinning. Scanning transmission electron microscopy characterization reveals that the oxidation of the laser-radiated WSe₂ is the origin of the carrier doping. Photocurrent mapping shows that after the same amount of laser irradiation, with increasing thickness, the laser patterned PN junction changes from the pure lateral to the vertical-lateral hybrid structure, accompanied by the decrease in the open circuit voltage. The vertical-lateral hybrid PN junction can be tuned to a pure lateral one by further irradiation, showing possibilities to construct complex junction profiles. Moreover, a NOR gate circuit is demonstrated by direct patterning of p-doped channels using laser irradiation without introducing passive layers and metal electrodes with different work functions. This method simplifies device fabrication procedures and shows a promising future in large scale logic circuit applications.