小型化高精度DRC/DSC模块开发研究

介绍ＤＲＣ／ＤＳＣ（自整角机／旋转变压器）模块的构成和基本工作原理，小型化高精度ＤＲＣ／ＤＳＣ模块的基本设计原理，应用及其注意事项。     

与自整角机/旋转变压器配套的数字转换器件

本文简要介绍了自整角机数字转换器件和旋转变压器、数字转换器的工作原理和主要特征参数，并概述了它们在失控系统中的工程应用。     

同步机／分解器-数字转换器的自动测试系统设计

本文介绍了同步机／分解器一数字转换器（自整角机／旋转变压器一数字转换器）的自动测试原理和方法，该自动测试系统是基于HPVEE软件平台和GPIB接口的一个应用实例。本文同时也对该产品人工测试与手动测试的误差进行了分析。     

减轻DSC／DRC负载的两种方法

介绍了数字－自整角机／旋转变压器的工作原理，详细阐述承实际应用中减轻ＤＳＣ／ＤＲＣ负载的两种方法，给出了一些计算公式以及使用中的注意事项。     

电子模块化雷达小功率伺服系统

简述了自整角机－数字转换器（ＳＤＣ）和数字－自整角机转换器（ＤＳＣ）的工作原理。给出了由ＳＤＣ和ＤＳＣ模块构成的电子模块化雷达天线方位控制小功率伺服系统和舰船摇摆复现系统。与机电式雷达小功率伺服系统相比，电子模块化雷达小功率系统具有体积小、可靠性高、性能稳定等特点，符合雷达模块化设计的发展方向。     

双通道伺服系统的数字化实现

介绍了双通道伺服系统的工作原理以及数字／自整角机转换器（DSC）在伺服跟踪系统中的应用。在双通道自整角机伺服系统的基础上，应用数字／自骜角机转换器实现了双通道伺服系统的数字化；给出了数字化双通道系统的硬件原理电路，并且利用软件实现数字信号的解码。仿真和试验表明这种数字化双通道系统工作可靠、非常适用于计算机对伺服跟踪系统的控制。     

三路旋转变压器／数字转换模块接口电路设计

介绍基于ISA总线的三路旋转变压器/数字转换模块接口电路的设计及应用.接口电路采用三个旋转变压器/数字转换模块分别控制三路测角信号的数字量转换,测角的时间周期短,精度高,且输出顺序不受硬件电路的限制,既可以三个角度同时准确输出,也可以某一个角度单路输出.接口电路已经成功应用在某平台惯导系统俯仰、横滚、航向三个姿态角的测量中,能够在平台惯导100 ms的控制周期内准确输出三个姿态角,测角精度达到10″.接口电路在测量精度和时间周期上都达到了要求.     

连续型双速自整角机/数字转换器的设计

介绍了连续型双速自整角机／数字转换器的设计方案．阐述了连续型双速自整角机／数字转换器的关键技术，并对组合型与连续型双速自整角机／数字转换器的特点进行了对比。     

航向数字显示器的设计

航向数字显示器是船用罗经与AIS的一种智能数字接口。文章介绍了航向数字显示器的设计,系统采用由单片机构成的控制器,能采集罗经自整角同步发送机或罗经信号转换箱输出的模拟信号,对此模拟信号进行衰减、鉴零、鉴相和整形等处理,能自动跟踪、显示和存储罗经的航向角度数值,能以RS-422(RS-485)通信方式向其他设备定时输出罗经航向的角度数据和ROT数据。     

轴角数字转换电路的软硬件设计

介绍了基于PC／104总线的超小型双通道自整角机一数字转换器接口电路的工作原理，阐述了其硬件设计和软件纠错的实现方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.