共查询到18条相似文献,搜索用时 286 毫秒
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讨论了谐振腔中的DBR对InGaAs/GaAs多量子阱SEED面阵光反射特性的影响.采用InGaAs/GaAs作为多量子阱SEED器件的有源区,从而获得了980nm工作波长.设计和分析了InGaAs/GaAs多量子阱SEED中的一种用于倒装焊的新型谐振腔结构.多量子阱材料是用MOCVD系统生长,利用微区光反射谱、PL谱以及X射线双晶衍射对多量子阱材料进行了测量和分析,测量结果表明多量子阱材料具有良好的质量,证明了器件结构的设计和分析是准确的. 相似文献
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讨论了谐振腔中的 DBR对 In Ga As/ Ga As多量子阱 SEED面阵光反射特性的影响 .采用 In Ga As/ Ga As作为多量子阱 SEED器件的有源区 ,从而获得了 980 nm工作波长 .设计和分析了 In Ga As/ Ga As多量子阱 SEED中的一种用于倒装焊的新型谐振腔结构 .多量子阱材料是用 MOCVD系统生长 ,利用微区光反射谱、PL 谱以及 X射线双晶衍射对多量子阱材料进行了测量和分析 ,测量结果表明多量子阱材料具有良好的质量 ,证明了器件结构的设计和分析是准确的 相似文献
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我们分析了 Ga As/Al Ga As半导体多量子阱 (MQW)光开关器件的室温激子吸收行为及光调制特性 ,优化设计了多量子阱结构 ,研制出常通型和常关型两种类型光开关器件 ,并对器件的光调制特性进行了测量与研究。实验得出的结论与理论计算相符合 ,常通型器件对比度约为 10∶ 1;常关型器件对比度约为 4∶ 1。 相似文献
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综述了近年来新发展的量子阱生长后置无序的无杂质空穴扩散诱导量子阱部分无序的工艺技术,量子阱部分无序的机理,并分析了它在量子阱光电器件中的应用和使用该技术制出的光集成器件的最新结果。并对它的应用前景作了初步展望. 相似文献
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本文采用光学传输矩阵元的方法设计了一种集成型反射式多量子阱器件,并给出了理论计算结果。采用MOCVD生长方法制作了该器件,它由n型多层增透介质膜、i型多量子阱、p型多层高反射率介质膜所组成。测试了该器件的光电流谱和反射率谱,并与理论结果作了比较,二者附合得很好。这种器件可以发展成兼具调制、开关、双稳复合功能的反射式集成器件。 相似文献
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Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode
推导了AlGaInP多量子阱LD器件暗电流RTS 噪声与缺陷相关性模型,实验结果表明暗电流RTS 噪声由有源区异质结界面载流子数涨落引起。根据相关性模型,确定了缺陷类型,定量确定了缺陷能级。分析了暗电流RTS 噪声功率谱密度的转角频率。实验结果和理论预测一致。本文结论提供一种确定AlGaInP多量子阱LD器件有源区深能级的有效方法。 相似文献
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A rate equation model for static and dynamic behavior of 1.55 μm InGaAsP multiquantum-well (MQW) semiconductor lasers has been developed. A three level scheme for the rate equations has been chosen in order to model carrier transport effects. The introduction of quasi-two dimensional (quasi-2-D) gateway states between unbound and confined states has been used to calculate, for each well independently, carrier density and gain, allowing to take nonuniform injection into account. Starting from the formal identity between a rate equation and a Kirchoff current balance equation at a capacitor node, the model has been implemented on a SPICE circuit emulator, SPICE has granted an easy handling of parasitics and opens the possibility of integration with electrical components. The model's parameters have been directly derived from a complete set of measurements on real devices. Thanks to this characterization and the model accuracy, we have obtained good agreement between simulations and experimental data. The model was finally used to improve both static and dynamic properties of MQW devices. Based on this optimization, compressive strained InGaAsP-InP MQW Fabry-Perot lasers were realized, achieving low threshold current, high efficiency, and more than 10 GHz of direct modulation bandwidth 相似文献
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Skagerlund J. Pusa F. Sahlen O. Gillner L. Schatz R. Granestrand P. Lundqvist L. Stoltz B. Terlecki J. Wahlin F. Morner A.-C. Wallin J. Oberg O. 《Quantum Electronics, IEEE Journal of》1998,34(1):141-146
Distributed feedback (DFB) laser parameters such as grating coupling coefficient, effective indices, facet reflectances, and the phases of facet reflectances have been determined using a method based on least-square fitting of theoretical spectra to measured, subthreshold DFB laser emission spectra. The only inputs needed are geometrical parameters such as length, grating period, and internal grating phase shifts. A larger number of devices have been successfully characterized, and consistent results have been obtained in both 1.3-μm multi-quantum-well (MQW) DFB lasers with both facets as-cleaved, and in 1.55-μm MQW DFB lasers with no, one, or two facets as-cleaved 相似文献
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J.-W. Shi H.-Y. Huang J.-K. Sheu C.-H. Chen Y.-S. Wu W.-C. Lai 《Photonics Technology Letters, IEEE》2006,18(15):1636-1638
We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the In/sub x/Ga/sub 1-x/N-GaN-based multiple-quantum-well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW. 相似文献
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We have developed a new scanning probe microscopy-based technique, scanning differential spreading resistance microscopy (SDSRM), which enables the determination of free carrier distribution inside operating electronic and optoelectronic devices. The results of our SDSRM study of multiquantum-well (MQW) buried heterostructure (BH) lasers under zero and forward biases are reported. Individual QW-barrier layers can be resolved in high-resolution SDSRM. The SDSRM results show different internal carrier distribution within the MQW active region in BH lasers with and without biases and provide direct experimental evidence of electron overbarrier leakage. Our results demonstrate the utility of SDSRM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional devices such as MQW BH lasers under operating conditions, in which traditional probing such as secondary ion mass spectroscopy, scanning spreading resistance microscopy, and electron beam-induced current microscopy can either apply only to devices under zero bias or provide only qualitative pictures. 相似文献
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K. Ikossi W. S. Rabinovich D. S. Katzer S. C. Binari J. Mittereder P. G. Goetz 《Microelectronics Reliability》2002,42(7)
Multiple quantum well (MQW) optical modulators have a wide range of applications in fiber-optic and remote communication systems. One of the challenges in producing reliable devices is maintaining the necessary PIN electrical characteristics while having large areas of complex MQW structures for optical processing. We report the first direct correlation between crystalline material imperfections and reverse bias behavior in MQW PIN devices. Molecular beam epitaxy grown GaAs/AlGaAs and strained InGaAs/AlGaAs MQW PIN structures are examined. Defects originating in the epitaxial material provide a conducting path along the PIN junction degrading the device performance and lowering the yield. Defectectomy, a method of eliminating the crystalline defects and restoring the device characteristics and improving the yield is described. 相似文献
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Pathak R.N. Goossen K.W. Cunningham J.E. Jan W.Y. 《Photonics Technology Letters, IEEE》1994,6(12):1439-1441
We report growth of In0.53Ga0.47 As-InP multiple quantum well (MQW) modulators operating at 1.55 μm for fiber-to-the-home applications. By employing a 200-period InGaAs-InP MQW stack in the intrinsic region of a p-i-n structure and working in reflection, we have been able to realize surface-normal modulator devices that exhibit better than an 8:1 contrast ratio. This is the highest contrast ratio reported to date for this type of device working at this wavelength 相似文献
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Hasenberg T.C. Miles R.H. Kost A.R. West L. 《Quantum Electronics, IEEE Journal of》1997,33(8):1403-1406
Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW 相似文献
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Optoelectronic smart pixels with hybrid integration of GaAs/AlGaAs multiple quantum well (MQW) detectors and modulators arrays have beed made,which are flip-chip bonded directly on the top of lμm silicon CMOS circuits,as enables an achievement of Optoelectronic Integrated Circuits (OEIC) as well as does the design and optimization of CMOS circuits and GaAs/AlGaAs MQW devices to proceed independently. 相似文献