基于激光技术先进光电系统顶层布局发展分析

研究了国际先进光电系统布局的历史进程、技术分析和阶段研发成果。基于发展中的激光技术进展和工程应用,重点分析了光电探测、态势感知、光电对抗和隐身技术及其对光电装备研发的综合影响。主要涉及系统研发定位、顶层布局考虑、重要理论支撑和关键技术攻关等方面。给出了应对挑战的建议。     

智能电视操作系统全球专利分析

通过对智能电视操作系统相关专利进行检索,研究分析了智能电视操作系统总体技术发展趋势、专利布局、专利技术国家分布,重点对全球主要创新机构及创新人才进行介绍,特别是主要专利权人三星、LG的专利情况,进而得到全球主要智能电视操作系统应用情况及发展趋势的结论,以期对我国相关企业了解主要竞争对手专利情况、明确研发方向提供依据和参考.     

裸眼3D液晶透镜技术专利分析

液晶透镜技术是裸眼3D显示的前沿技术之一。从专利申请态势、技术及申请人的专利实力等角度对液晶透镜进行分析。对检索获得的专利文献进行人工标引、分析,梳理出该技术的发展脉络,绘制出技术功效图,为企业的技术研发、专利布局提供重要参考。     

全球激光焊接专利技术研究进展

通过对全球激光焊接技术领域的专利数据进行统计分析,结合对具体专利内容的解读,从专利申请趋势、区域市场布局、研发机构实力、热点技术主题等角度揭示全球激光焊接技术的研究进展。近10年来中国激光焊接专利技术高速发展,研发热情依然高涨,但国内专利整体缺乏海外市场布局;激光复合焊接工艺与方法、智能激光焊接技术与设备、非金属材料激光焊接是当前激光焊接领域的技术研发热点;未来可重点关注焊接过程的实时监测与质量控制、新型传感器技术、多功能自动化焊接设备、异种和复合焊接材料等技术领域的研发动向。     

透过专利看微处理器的技术发展（七）——Intel早期多级Cache专利技术分析

本文在调研大量专利文献的基础上,通过跟踪Intel早期多级高速缓存（Cache）技术专利,对几篇重要多级Cache专利技术进行了深入分析。通过申请年代分析、引证分析、衍生专利分析等手段,揭示了早期Intel多级Cache的技术重点和研发趋势,为产品研发提供线索和思路。     

纳米压印技术在太阳能电池中应用的研究进展

对纳米压印技术原理、分类和不同领域的应用进行了简单阐述。总结了纳米压印技术在不同类型的太阳能电池,如晶硅太阳能电池、薄膜太阳能电池、聚合物太阳能电池及其他新型太阳能电池中的应用,并重点阐述了纳米压印技术在制备太阳能电池减反膜、图案化衬底、图案化活性层和图案化电极等有效减少太阳能电池表面太阳光反射和大大提高太阳能电池光电转换效率方面的研究进展。最后,针对纳米压印技术在产业化中所面临的困难进行了分析和总结,并提出了纳米压印技术在太阳能电池领域未来的研究重点和发展方向。     

裸眼3D显示技术专利分析

随着3D显示技术领域的发展,裸眼3D显示技术成为其中一个重要的研究方向和未来的发展趋势.通过研究国内外裸眼3D显示技术的发展现状,对该领域的专利进行统计,从全球及中国的专利申请趋势、来源国和目标国申请分布以及技术构成等方面对裸眼3D显示技术的总体专利态势进行分析.     

全球LED产业技术专利检索分析

选择"七国两组织"专利数据库,采集1985年1月1日至2008年12月31日期间的全球LED技术专利文献,建立专利数据库.再选择广东专利信息服务平台分析系统分别从专利申请总量、重点专利技术和重点专利持有人等方面,对LED产业技术专利进行了深入分析,并分析了国际LED产业技术专利现状,提出了发展我国LED专利的策略.     

基于专利地图的智能电视遥控技术竞争态势研究

利用Thomson Innovation专利数据库,对触摸板、惯性传感、超声定位和基于便携终端的遥控等四类智能电视遥控技术的全球专利进行检索,并借助TDA和Innography专利工具,分析智能遥控技术的总体发展趋势、技术分支发展态势、全球区域布局、主要创新机构以及综合竞争力,绘制专利地图。结果显示智能电视遥控技术已进入技术成熟期,并形成了两大主流技术方向;日本、美国、中国、韩国是主要专利来源国;日本企业占据全球智能遥控主要创新机构的半壁江山;三星电子综合竞争力最强,松下、索尼、夏普、UEI等公司也具有较强竞争优势。     

智能电视关键技术发展研究

基于德温特专利数据,综合运用TDA、Innography等分析工具,对智能电视关键技术国际及国内发展态势进行分析,对比研究了美国、日本、韩国、中国的关键技术构成、专利申请趋势及技术发展重点.结果显示,中国在智能电视核心技术、专利数量和质量、人才团队规模与实力等方面还存在不足.最后,基于专利分析结果,提出了发展智能电视关键技术的对策建议.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.