横向双模双频滤波器设计

基于横向滤波器耦合结构,采用支节加载双模谐振器,设计了中心频率位于1.57 GHz(GPS应用)与2.4GHz(WLAN应用)的双频微带滤波器。由短路支节加载双模谐振器形成第一个通带,开路支节加载双模谐振器形成第二个通带,两个谐振器被输入/输出馈线隔离,每个通带的中心频率与带宽可以单独调节。测试结果表明:两个通带内的最小插损分别为2.18,1.35 dB,3 dB带宽分别为5.2%,6.8%,回波损耗均小于16 dB,三个传输零点分别位于1.28,2.08,2.71 GHz处。该滤波器具有尺寸小、带外选择性好等优点。     

一种新型的T型双模微带带通滤波器

提出了一种新型的T型双模微带带通滤波器结构,即在T型谐振器的两侧通过交叉耦合结构和加载开路支节,分别实现了在通带外的低阻带产生一个传输零点和高阻带产生了两个衰减极点,提高了阻带的抑制能力,同时保证了滤波器的小型化。该滤波器的仿真结果表明,通带的中心频率为3.1GHz,最大回波损耗优于-40dB,最小插入损耗为-0.1dB,实测和仿真结果相一致。     

基于嵌套缺陷地谐振器的紧凑型多通带滤波器*

根据双模缺陷地谐振器(DDGSR)在结构上易于嵌套实现多通带滤波器的独特优势,以及通过馈线中加上枝节线引入传输零点改善高频阻带特性的方法,提出了一种新颖的具有较陡边带和较宽高阻带特性的四通带滤波器。一节DDGSR 包含一个槽线谐振器(SLR)和一个缺陷地阶跃阻抗谐振器(DSIR),运用具有四节双模缺陷地谐振器的嵌套双模缺陷地谐振器结构,并通过仿真软件优化结构参数设计并制作了GPS(1.57GHz)、DCS(1.8GHz)、WLAN(2.4GHz)、WiMAX(3. 5GHz)频段的四通带滤波器。测试结果表明,四个通带中心频率分别为1. 58/1.8/2.42/3.58GHz,3dB 带宽为8.2/5/5.4/6.7%,带内插损最小值为1.2/1.6/1.6/2.6dB。设计与测试结果良好的一致性验证了理论的准确性。     

基于折叠双模谐振器结构的微带带通滤波器

设计了一种采用折叠双模谐振器结构的新型双模微带带通滤波器。通过在折叠双模谐振器两侧加载交叉耦合结构,使通带两端产生一对传输零点。实验结果表明,该滤波器具有结构紧凑,体积小,损耗低,带外抑制性能好等优点,且其中心频率为3.65GHz,通带为2.5~4.8GHz,最大回波损耗优于-33.5dB,最小插入损耗为-0.18dB,实测结果和仿真结果相吻合。     

基于折叠双模谐振器结构的微带带通滤波器

设计了一种采用折叠双模谐振器结构的新型双模微带带通滤波器。通过在折叠双模谐振器两侧加载交叉耦合结构,使通带两端产生一对传输零点。实验结果表明,该滤波器具有结构紧凑,体积小,损耗低,带外抑制性能好等优点,且其中心频率为3.65 GHz,通带为2.5～4.8 GHz,最大回波损耗优于-33.5 dB,最小插入损耗为-0.18 dB,实测结果和仿真结果相吻合。     

基于枝节加载环形谐振器的双频带滤波器

该文提出了一种新型的非对称枝节加载环形谐振器,并研究了该谐振器的性质。基于提出的谐振器设计了一款双频带通滤波器,并进行了测试。测试结果表明:滤波器的两个通带的中心频率分别为2.38 GHz和5.19 GHz,带宽分别约为140 MHz和90 MHz,带内插损分别小于1.7 dB和2.2 dB,回波损耗分别大于15 dB和12 dB。4个传输零点按频率由低到高分别为1.78 GHz,3.34 GHz,4.98 GHz和5.96 GHz,这些零点极大地提高了滤波器的选择性。     

新型差分三通带滤波器设计

基于T型支节加载均匀阻抗谐振器,设计了一款新型小型化差分三通带滤波器,并对该滤波器进行了改进设计。所设计滤波器的三个通带中心频率分别为2,6.4,9.2 GHz。-3 dB相对带宽分别为20%(1.85~2.25 GHz)、7%(6.21~6.71 GHz)、5%(8.98~9.44 GHz),通带内插入损耗小于1.5 dB。为了实现良好的共模抑制,在该滤波器中心对称处增加了开路支节,高频处的共模抑制得到显著提高。该滤波器结构简单,能够实现良好的性能,仿真结果与理论分析一致。     

基于T 型谐振器的新型可重构滤波器的设计

基于T 型谐振器结构,设计了一款新型小型化可重构滤波器。它可以通过开/ 关射频开关,实现三种滤波器的重新配置。这三种模式分别为带阻滤波器(BSF)、宽阻带带阻滤波器(WB鄄BSF)和双模带通滤波器(DB-BPF)。设计并制造了一款小型可重构滤波器实物(εr =2.65,h =1 mm)。其中,带阻滤波器的阻带中心频率为3.89 GHz,-3 dB相对带宽为90.9% (2.12 - 5.65 GHz);宽带带阻滤波器的阻带中心频率为3.54 GHz,-3 dB 相对带宽为137.85%(1.1～5.98 GHz);双模带通滤波器的两个通带中心频率分别为1.53 GHz 和6.89 GHz,-3 dB 相对带宽分别为17. 6%(1.4～1.67 GHz)和1.16% (6.85～6.93 GHz),两通带之间回波损耗优于15 dB。实物测试结果与仿真结果基本一致。     

基于枝节加载谐振器的新型三频带通滤波器设计

提出了一种新型平面三频带通滤波器,该滤波器由一个加载短路枝节的阶梯阻抗谐振器,一对加载开路枝节的背靠背E型谐振器,以及包含源负载直接耦合的馈电结构组成.所采用的枝节加载谐振器的多模工作特性使滤波器的体积大大减小,同时每个通带的位置及其耦合特性都能够独立调谐.另外,通过源负载直接耦合引入通带两侧的传输零点,实现了滤波器良好的频率选择性.最后设计并加工了一款高选择性小型化三频带通滤波器,其三个通带的中心频率分别为2.0GHz,3.95GHz和6.35GHz,插入损耗均小于2.5dB,带内回波损耗均优于14dB,实验结果与仿真结果吻合良好.     

应用于多模WLANs的紧凑SIR双频带通滤波器

提出了一种基于阶梯阻抗谐振器的紧凑、高选择性的微带双频带通滤波器,使用了两个发卡型阶梯阻抗谐振器交叉组成了伪交指结构谐振器,实现了小型化双频滤波器。采用0°馈电结构引入了三个传输零点,从而提高了频率选择特性。加工了微带双频带通滤波器实物,实测结果显示,两个通带中心频率分别为2.41GHz和5.26GHz,中心频率比大于2,带内插损分别为1.06dB和1.59dB,3dB相对带宽分别为22.8%、15.6%,仿真与实测吻合较好。与传统的分支加载、阶梯阻抗等双频滤波器相比,该滤波器具有设计简单、结构紧凑、低插入损耗及高频率选择特性等优点。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.