红外光学材料硫化锌衬底上沉积金刚石膜的研究

采用微波等离子体化学气相沉积法,在预镀陶瓷过渡层的硫化锌衬底上沉积金刚石膜。在以前的实验中,我们发现在陶瓷过渡层上沉积金刚石膜极其困难,但采用金刚石诱导形核方法后,我们已经在过渡层／硫化锌试样表面获得了很小面积（约1mm宽的环状区域）的金刚石形核。本文对前期的诱导形核工作进行了一定改进,目前已经使形核生长范围大大增加,沉积面积超过原来10倍。此外,本文对金刚石／过渡层／硫化锌试样的红外透过特性以及金刚石膜质量等进行了评价。     

SiC/DLC过渡层对类金刚石薄膜力学性能的影响

采用等离子体浸没离子注入及沉积技术在钛合金(Ti6Al4V)表面制备了类金刚石薄膜和含有SiC/DLC过渡层的类金刚石薄膜。采用拉曼光谱及扫描电子显微镜分析了薄膜的成分和结构,并利用超显微硬度计、薄膜结合力测试仪和往复式摩擦实验机研究了薄膜的硬度、韧性、膜/基结合力和耐磨性。研究结果表明,SiC/DLC过渡层可以提高钛合金(Ti6Al4V)表面类金刚石薄膜的韧性及膜/基结合力,与未制备过渡层的类金刚石薄膜相比,含有SiC/DLC过渡层的类金刚石薄膜的耐磨性明显提高。     

金钢石薄膜与基材之间过渡层技术的研究

通过TEM观察发现在金刚石膜与单晶硅片、金刚石膜与A1N陶瓷之间存在一层过渡层，过渡层的存在为金刚石的形核及生长提供了有利的条件，受此启发，为了改善金刚石与基材的结合强度，采用磁控溅射、空心离子镀、真空蒸镀等方法在MO片上沉积TiC、TiCN（C／N=1／2）、TiCN（C／N=1／10）等薄膜，研究了它们对金刚石膜与基材的结合强度的影响．     

Si过渡层对梯度影响类金刚石薄膜结合力的影响研究

实验利用双放电腔微波-ECR等离子体源设备,采用复合PVD（physical vapor deposition）和PECVD（plasma enhanced chemical vapor deposition）的方法, 先后在NiTi基体上沉积Si和Si/α-C∶H过渡层,然后制备类金刚石薄膜.Raman光谱和透射电镜表明制备的梯度薄膜是典型的类金刚石薄膜,划痕的测试结果表明, Si过渡层沉积时间影响着梯度类金刚石薄膜与NiTi合金基体之间的结合强度,当沉积时间在60min左右时可获得具有最好结合强度的梯度薄膜,而超过或低于这个时间值会导致膜基结合强度降低.     

金刚石薄膜与基材之间过渡层技术的研究

通过ＴＥＭ观察发现在金刚石膜与单晶硅片，金刚石膜与ＡｌＮ陶瓷之间存在一层过渡层，过渡层的存在为金刚石的形核及生长提供了有利的条件，受此启发，为了改善金刚民基材的结合强度，采用磁控溅射，空心离子镀，真空蒸镀等方法在Ｍｏ片上沉积ＴｉＣ，ＴｉＣＮ（Ｃ／Ｎ＝１／２）ＴｉＣＮ（Ｃ／Ｎ＝１／１０）等薄膜，研究了它们对金刚石膜与基材的结合强度的影响。     

含钨类金刚石薄膜的制备与性能研究

为了满足制备较厚低摩擦系数类金刚石薄膜（DLC）耐磨镀层的实际需求，对在等离子增强化学气相沉积的类金刚石薄膜（W—DLC）中掺钨进行了系统研究。研究结果表明，类金刚石薄膜掺入钨，在较宽的工艺条件范围内，都可以沉积厚度超过5μm的薄膜而不发生剥落。适当控制工艺条件和膜中钨的含量可以提高薄膜的硬度，降低磨损率，且保持低的摩擦系数和较高的沉积速率。     

不锈钢基体预处理对合成类金刚石碳膜的影响

本文研究了在射频等离子体增强化学气相沉积工艺中不同的预处理方法对不锈钢基底上类金刚石碳膜生长的影响。所沉积的碳膜的结构和形貌分别用激光Raman光谱和扫描电子显微镜进行了分析，薄膜与基底的结合力通过划痕实验进行了表征。实验结果表明，通过采用合适的过渡层能显著提高类金刚石碳膜与基底的结合力，而通过化学腐蚀的方法对提高结合力的帮助不大。     

用EACVD方法合成金刚石薄膜

本文报道了用电子助进化学气相沉积（ＥＡＣＶＤ）方法合成金刚石膜的结果．用ｘ射线衍射喇曼散射和扫描电子显微镜等对合成的薄膜的性质及形貌进行了鉴定和观察，给出合成金刚石膜的工艺参数范围并简要讨论了工艺条件对膜合成的影响。主题词；电子助进化学气相沉积（ＥＡＣＶＤ）低温等离子体　金刚石膜国家自然科学基金资助课题     

CVD金刚石表面金属化Cr/Cu/Ni/Au的研究

用化学气相沉积（CVD）金刚石表面金属化，制备了多层膜Cr／Cu／Ni／Au，膜层与CVD金刚石基体间的附着强度高。运用X射线衍射（XRD）、扫描电镜（SEM）和差热分析（DTA）对Cr／CVD金刚石界面进行了分析，发现在金属化温度低于300℃时，Cr与CVD金刚石之间无化学反应，并对附着机制进行了探讨。在对Cr／CVD金刚石进行热处理时发现，在474．6～970℃之间，DTA曲线有明显的吸热效应，即界面有化学反应产生。在经900℃左右热处理后，XRD分析界面有Cr3C2和Cr7C3生成。     

Ti/TiN/TiC/DLC固体膜润滑特性实验研究

提出一种新型复合固体润滑膜,并讨论了该复合膜的结构和作用机理.复合结构的基本组成是传统硬质涂层TiN和TiC的结合,最上面的固体润滑膜是用射频等离子体增强化学气相沉积（RFPECVD）方法沉积的类金刚石（DLC）膜.分别用紫外拉曼光谱仪和扫描电子显镜分析薄膜的显微结构和表面形貌,用摩擦磨损实验机测定薄膜的摩擦学特性.结果表明,所制备的薄膜为类金刚石膜,薄膜表面含有大量的类石墨的sp2,能有效的担负固体润滑膜的功能.摩擦过程中产生的转移层也有助于减摩功能的实现.     

铜上采用镍过渡层化学气相沉积金刚石薄膜的研究

采用镍过渡层研究了铜基片上金刚石薄膜的化学气相沉积．镍过渡层与铜基底间在高温退火条件下形成的铜镍共晶体明显地增强了金刚石薄膜与铜基片之间的结合力．用扫描电子显微镜和激光Ｒａｍａｎ谱研究了薄膜的形貌和质量;采用高温氢等离子体退火工艺在基片表面形成的铜镍碳氢共晶体上抑制了无定形碳和石墨的形成,有利于金刚石薄膜的生长．金刚石薄膜的均匀性受到共晶体的均匀性的影响．     

类金刚石薄膜中杂质Fe对其力学性能的影响

描述了利用射频等离子体溅射法采用不同阴极在衬底Ｓｉ片上形成类金刚石薄膜的杂质含量及杂质对厚度和硬度的影响分析与结果,比较了ＤＬＣ膜的力学性能在有无金属杂质情况下的异同,分析和计算了其硬度与硬度与制备参数间的关系,得出利用石墨作电极能制备出质量较好的ＤＬＣ膜,初步探讨在Ｓｉ衬底上沉积高硬度和强附着度类金刚石薄膜的有关工艺条件,并在理论上对这一结果进行了解释。     

采用钛-铝-钼过渡层在铜基底上沉积金刚石薄膜的研究

采用钛-铝-钼过渡层研究了铜基片上金刚石薄膜的化学气相沉积.用SEM和Raman谱研究了薄膜的形貌和质量.用XRD分析了膜基间形成的化合物的成分,并进一步分析了铝的存在对膜基结合力的影响.实验证明,钛-铝-钼过渡层的存在显著提高了金刚石薄膜与铜基底的结合力.     

基于RFPECVD方法不锈钢上沉积类金刚石薄膜的机械与摩擦特性

讨论用射频等离子体增强化学气相沉积(RFPECVD)工艺,在室温下实现在1Cr18Ni9Ti不锈钢基底上镀类金刚石(DLC)膜.为提高DLC膜的结合力,首先在不锈钢基底上沉积Ti/TiN/TiC功能梯度膜.借助所设计的界面过渡层,成功地在不锈钢基底上沉积了一定厚度的DLC膜.通过优化沉积参数,所沉积的DLC膜在与100Cr6钢球对磨时摩擦系数低于0.020.在摩擦过程中DLC膜的磨损机制借助SEM、Raman分析进行了研究.     

The effects of plasma pre-treatment and post-treatment on diamond-like carbon films synthesized by RF plasma enhanced chemical vapor deposition

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition and the effects of plasma pre-treatment and post-treatment on the DLC films were investigated. Experimental results show that the surface roughness of the substrate, ranging from 0.2 to 1.2 nm, created by the plasma pre-treatment, will affect the surface roughness of the DLC films deposited using methane as the carbon source. However, the film surface roughness (0.1-0.4 nm) is much smaller than that of the substrate. Raman analysis and hardness measurement by nanoindentation indicate that the structure and the hardness of the DLC films are relatively unchanged for the film surface roughness investigated. For the argon or hydrogen plasma post-treatment of the DLC films deposited using acetylene as the carbon source, it is found that surface roughness decreases with the post-treatment time. Although the hardness decreases after post-treatment, it remains relatively constant with increasing post-treatment time.     

CVD of hard DLC films in a radio frequency inductively coupled plasma source

Chemical vapor deposition (CVD) of hard diamond-like carbon (DLC) films on silicon (100) substrates from methane was successfully carried out using a radio frequency (r.f.) inductively coupled plasma source (ICPS). Different deposition parameters such as bias voltage, r.f. power, gas flow and pressure were involved. The structures of the films were characterized by Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy. The hardness of the DLC films was measured by a Knoop microhardness tester. The surface morphology of the films was characterized by atomic force microscope (AFM) and the surface roughness (R_a) was derived from the AFM data. The films are smooth with roughness less than 1.007 nm. Raman spectra shows that the films have typical diamond-like characteristics with a D line peak at 1331 cm⁻¹ and a G line peak at 1544 cm⁻¹, and the low intensity ratio of I_D/I_G indicate that the DLC films have a high ratio of sp³ to sp² bonding, which is also in accordance with the results of FTIR spectra. The films hardness can reach approximately 42 GPa at a comparatively low substrate bias voltage, which is much greater than that of DLC films deposited in a conventional r.f. capacitively coupled parallel-plate system. It is suggested that the high plasma density and the suitable deposition environment (such as the amount and ratio of hydrocarbon radicals to atomic or ionic hydrogen) obtained in the ICPS are important for depositing hard and high quality DLC films.     

Optimization of the Deposition Parameters of DLC Coatings with the IC-PECVD Method

Amorphous carbon film, also known as diamond-like carbon (DLC) film, is a promising material for tribological application. It is noted that properties relevant to tribological application change significantly depending on the method of preparation of these films. These properties are also altered by the composition of the films. In view of this, the purpose of the present study was to determine the optimal values of selected deposition parameters of hydrogenated DLC films on high-speed steel tool substrates with the inductively coupled plasma enhanced chemical vapor deposition (IC-PECVD) method. To optimize the deposition parameters for hydrogenated DLC films, Taguchi's method was used. Deposition parameters (bias voltage, bias frequency, deposition pressure, and gas composition) were optimized with consideration to hardness of the film. Based on the experimental results, the optimal parameter setting are ?50 V, 500 Hz, 4 µbar, and 90:10 for achieving maximum value of hardness. It was found that bias voltage has greater influence on hardness. At the optimum conditions, the conformance run resulted in a hardness value of 1580 KHN. Atomic force microscopy images showed that the DLC films are smooth with an average roughness (Ra) of 1.24 nm on silicon substrate.     

利用前后处理技术改进钛／硅基板上的类金刚石场发射特性

采用微波等离子体化学气相沉积系统存钛/硅基板上沉积类金刚石薄膜,并利用拉曼光谱仪、扫瞄式电子显微镜及原子力显微镜研究了氢等离子体前处理及快速退火后处理对类金刚石薄膜场发射特性之影响.在沉积类金刚石薄膜之前,钛/硅基板使用了两种前处理技术:第一种为研磨金刚石粉末,第二种为研磨金刚石粉末后外加氢等离子体刻蚀处理.成长类金刚石薄膜后进行快速退火处理.发现不论是氢等离子体前处理还是快速退火后处理皆能改善场发射特性,其中经退火后处理的场发射特性比氢等离子体前处理的场发射特性改善更明显.其因之一在于快速退火后处理可在类金刚石薄膜表而形成sp2丛聚,提供了很多的场发射子,也同时增加了表面粗糙度;另一个原因可能是在快速退火后处理期间会使类金刚石薄膜进一步石墨化,因而提供了许多电子在通过类金刚石薄膜时的传输路径.研究结果表明:利用适当的前后处理技术可改进类金刚石薄膜的场发射特性,进而做为冷阴极材料之应用.     

Characteristics of DLC films by DC magnetron sputtering incorporated with cesium

Diamond-like carbon films were deposited by planar DC magnetron sputtering with cesium vapor. The electrical properties of the plasma were investigated by the I-V measurement of the discharge. The increase in the plasma density and the generation of the negative carbon ions were observed from the I-V curves and deposition rate with different substrate biases. The deposited DLC films were examined by Raman spectroscopy and plasmon energy loss analysis in order to assess their structures. The DLC film obtained with Cs vapor contained a higher sp³ fraction than that without Cs vapor. This result implied that the negative carbon ions produced by Cs vapor participated in the deposition through the subplantation process. From experimental results, it is expected that Cs vapor addition to conventional magnetron sputtering system makes possible the deposition of higher quality DLC as well as large area deposition.