室温连续的新结构垂直腔面发射半导体激光器

本文报道了室温连续激射的ＧａＡｓ／ＧａＡＩＡＳ新结构垂直腔面发射半导体激光器的最新研究结果．该器件结构是采用钨丝掩膜四次质子轰击方法制备的，这种方法是目前报道的垂直腔面发射激光器制作工艺中最简单的．对于直径１５μｍ的钨丝，器件的最低阈值电流为１７ｍＡ，最大光输出功率达４ｍＷ，微分量子效率高达６５％．     

面向长距离通讯1550 nm垂直腔面发射激光器的研究

采用InP基衬底设计并制备了1550 nm垂直腔面发射激光器。采用混合镜面布拉格发射镜,其中顶部采用4.5对硅和二氧化硅的介电布拉格反射镜,同时采用隧道结的方式降低p层载流子吸收。制备出阈值电流在20 mA,室温直流下输出光功率为7 μW,激射波长为1554 nm,激射谱半高宽为3 nm的垂直腔面发射激光器。     

H型结构垂直腔面发射激光器

报道了一种结构新颖的Ｈ型垂直腔面发射激光器。器件是由钨丝掩膜一次质子轰击和选择腐蚀相结合制备的，实验已实现在脉宽为２０μｓ，占空比为１１０的脉冲电流条件下的室温激射。     

InGaAs量子阱垂直腔面发射激光器

报道了一种新型的具有ＩｎＧａＡｓ量子阱结构有源区的垂直腔面发射激光器，采用钨丝作为掩膜，通过两次垂直交叉Ｈ＾＋质子轰击工艺制备器件，初步实现了室温脉冲工作，最低阈值电流达２０ｍＡ，激射波长为９１５ｎｍ，器件的串联电阻最低达１２０Ω。     

室温连续可见光垂直腔面发射激光器

利用钨丝掩膜质子轰击工艺制造出一种室温条件下可连续工作的可见光垂直腔面发射激光器。激射波长为６５０ｎｍ，未装在热沉上时连续工作最大输出功率为８５μＷ。     

长波长面发射激光器的现状及其发展前景

回顾了适用于未来并联光通信系统的工作波长为１．３μｍ和１．５５μｍ的垂直腔面发射激光器在近年来的发展概况。讨论了改进上述激光器激射特性的关键问题，其中有高反射镜面、温控、电流限制结构等问题。     

980nm大功率垂直腔底发射激光器

报道980nm大功率底发射垂直腔面发射激光器的结构、研制及器件的阈值电流、输出功率和光谱特性．在室温(24℃)下，5A连续电流工作时，出光孔径400μm的器件激射波长为984．1nm，输出功率达到1．42W，是目前所能见到报道中最高的．研究了出光孔径600μm的器件在连续工作时，激射波长、光谱半高宽随注入电流的变化以及在重复频率100Hz，脉冲宽度50—1000μs条件下的输出功率、效率与注入电流的关系．     

多次外光反馈下垂直腔面发射激光器非线性动态特性理论研究

在SIMULINK平台下建立了垂直腔面发射激光器(VCSEL)动态仿真模型，利用该模型对多次外光反馈下垂直腔面发射激光器的非线性行为进行了研究。结果表明，短外腔时，光子密度随外腔长呈周期为半激射波长的余弦关系；长外腔时，随外腔长增加，垂直腔面发射激光器依次经历混沌、多周期、倍周期和单周期区域，增大外腔反射率时同样存在这些非线性区域，但出现顺序相反。进一步得出：考虑单次反馈时由于忽略了占有较多能量的高次反馈导致上述非线性效应偏弱；增大自发辐射因子或减小线性展宽因子可抑制系统的非线性行为。     

基于AlAs氧化法研制的垂直腔面发射激光器

结合垂直腔面发射激光器的制备,研究了AlAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射.     

微机械可调谐垂直腔面发射激光器调谐范围分析与设计

介绍了可调谐激光器的意义和它的基本调谐方法及调谐原理. 对影响微机械可调谐垂直腔面发射激光器调谐范围的因素做了重点分析，计算了空气隙的最大变化范围和由此引起的激射波长的调谐范围.     

Mesa-size dependence characteristics of vertical surface-emitting lasers

The vertical-cavity surface-emitting laser (VCSEL) is the most suitable light source for many optoelectronic applications because of its planar nature. The design of large VCSEL arrays requires accurate modeling of device characteristics. In this paper, we present a thermal model to analyze the dependence of VCSEL threshold current and light-output characteristics on aperture size. For both 850-nm and 980-nm VCSELs, a linear dependence of threshold current on device area is observed for oxidized aperture sizes with diameters between 5 μm and 25 μm. Good agreement between theoretical and experimental light-output characteristics is observed using a simple thermal model.     

长波长GaInNAs垂直腔面发射激光器

新出现的直接跃迁GaInNAs与具有高反射率的AlAs／GaAs分布布拉格反射镜相结合构成了GaAs基长波长(1．3—1．6μm)垂直腔面发射激光器(VCSEL)，将成为光纤通信、光互联和光信息处理等的关键元件。本文从材料的选取、外延技术和GaInNAs VCSEL国外和国内的发展状况等方面对长波长GaInNAs VCSEL进行了综合阐述。     

氧化孔径对高功率垂直腔面发射激光器温升的影响

为了在制作垂直腔面发射激光器(VCSEL)时选择合适的氧化孔径尺寸,以获得较好的光束质量和较高的输出功率,对具有不同氧化孔径的单管器件的热特性进行了实验研究。通过控制氧化时间,制作了氧化孔径分别为415、386、316μm的单管器件,台面直径和P型接触电极直径均为450μm和400μm。针对3种器件在室温连续工作条件下不同的输出特性,对它们的热阻进行了实验测量,发现氧化孔径越小时器件热阻越大。通过对比电流、波长及温度的关系,得到了由电流引起的自热效应给3种器件带来的温升情况。注入电流为1A时,氧化孔径为415μm的器件温度为32.4℃,氧化孔径为386μm的器件温度为35.2℃,氧化孔径为316μm时,器件的温度高达76.4℃。     

Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO₂/Ta₂O₅ distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range.     

Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm² are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.     

垂直腔面发射激光器热场特性分析

应用格林函数方法计算了增益波导垂直腔面发射激光器的热传导方程,分析了电流扩展、材料参数和工作条件对温度分布的影响。计算结果表明,电流扩展是影响这种激光器热场特性的主要因素,降低阈值电流是减小温升的有效方法。     

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.     

A linear array of 980 nm VCSEL and its high temperature operation characteristics

A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150 μm and 100 μm diameter ones at both sidesof the center with center to center spacing of 300/zm and 250 μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm~2 is obtained. The temperature dependent characteristics of the linear array axe investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz.     

Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm

Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 μm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multiquantum- well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 μs, 5 %) operation was obtained at room temperature for 35 μm-diameter devices with threshold current of 85 mA.