多孔硅中电子光跃迁过程的研究

用硅-氧化硅复合纳米材料的能带混合模型研究了多孔硅中的各类电子状态。分析了各种状态的能带属性及其量子限制特性，从而解释了实验中观察到的量子限制态和非量子限制态。在有效质量理论框架下计算了不同能级间的光跃迁矩阵元，得出了带内和带间状态间的跃迁选择定则。运用所计算的结果较好地解释了实验中观察到的PL和CL光谱中的量子限制态、非量子限制态、元激发陷阱以及各种不同的谱峰。最后从多孔硅发光特性与半导体材料及杂质、缺陷发光的对比中阐明了这种纳米发光材料的特征。由此笔者提出了研究硅一氧化硅复合纳米材料来开发新的硅基发光材料、器件和集成电路的新途径。     

生长温度对InGaN/GaN多量子阱LED光学特性的影响

利用低压MOCVD系统,在蓝宝石衬底上外延生长了InGaN/GaN多量子阱蓝紫光LED结构材料.研究了生长温度对有源层InGaN/GaN多量子阱的合金组分、结晶品质及其发光特性的影响.结果表明当生长温度从730℃升到800℃时,LED的光致发光波长从490nm移到380nm,室温下PL谱发光峰的半高全宽从133meV降到73meV,表明了量子阱结晶性的提高.高温生长时,PL谱中还观察到了GaN的蓝带发光峰,说明量子阱对载流子的限制作用有所减弱.研究表明,通过改变生长温度可以对LED发光波长及有源层InGaN的晶体质量实现良好的控制.     

GaN基绿光LED材料蓝带发光对器件特性的影响

分析比较了在不同外延生长条件下GaN基高In组分绿光LED材料室温和低温10K下光致发光谱中蓝带发光峰,研究了外延结构中p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响.结果表明:通过优化p型层的外延生长条件,可有效降低和消除其蓝带发光峰较之多量子阱主峰的相对强度,有利于提高LED器件特别是高In组分绿光LED器件在同等注入电流条件下的发光功率.     

GaN基绿光LED材料蓝带发光对器件特性的影响

分析比较了在不同外延生长条件下GaN基高In组分绿光LED材料室温和低温10K下光致发光谱中蓝带发光峰,研究了外延结构中p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响.结果表明:通过优化p型层的外延生长条件,可有效降低和消除其蓝带发光峰较之多量子阱主峰的相对强度,有利于提高LED器件特别是高In组分绿光LED器件在同等注入电流条件下的发光功率.     

氧分压对PLD法生长Si(111)基ZnO薄膜性能的影响

在不同氧分压下用脉冲激光沉积(PLD)法在n型硅(111)衬底上生长ZnO薄膜。通过对其进行XRD、傅里叶红外吸收(FTIR)和光致发光谱(PL)的测量,研究了氧分压对PLD法制备的ZnO薄膜的结晶质量和发光性质的影响。XRD显示,氧分压为6.50Pa时可以得到结晶质量最佳的ZnO薄膜。PL谱显示,当氧分压由0.13Pa上升至6.50Pa时,位于380nm附近的主发光峰的强度最大。当氧分压进一步上升至13.00Pa时,主发光峰减弱,与氧空位有关的发光峰消失,显示出ZnO薄膜的PL谱和氧分压的大小密切相关。     

不同厚度未掺杂GaN薄膜的特性分析

对厚度不同的样品进行了XRD和PL谱测量,由(0002)面、(30—32)面的摇摆曲线的半峰宽值和GaN(0002)衍射峰位置计算了样品的刃位错、螺旋位错的密度以及C轴应变,实验结果表明厚度增加后Gain薄膜中的刃位错、螺旋位错密度及C轴薄膜应力均得到减小,而PL谱带边峰和蓝带强度显著增强。分析认为：厚度增加后,位错减少是由材料生长过程中位错的合并和湮灭作用造成的;样品PL谱的带边峰和蓝带强度显著增强是因为位错引入的非辐射性复合中心数目减少。     

一种新结构中ZnSe薄膜电致发光特性研究

用电子束蒸发的方法制备了一种新的ITO／SiO2／ZnSe／SiO2／Al薄膜电致(TFEL)发光器件。在交流电压驱动下,其有2个发光峰,分别位于466nm和560nm。通过研究器件(PL)激发(PLE)谱、光致发光、EL发光以及EL发光强度随驱动电压和频率的变化发现,器件的发光来源于ZnSe的带边发射和自激活发光中心。器件的发光机理与一般的无机电致发光有所不同。这里,SiO2作为电子加速层,ZnSe作为发光层,电子在SiO2层中的高电场作用下被加速到很高的能量,然后直接碰撞激发ZnSe分子使其发光。这种发光现象被称为固态类阴极发光。     

低压MOCVD生长ZnO单晶薄膜的制备与性质

利用 LP-MOCVD生长技术 ,采用 Zn(C2 H5) 2 作 Zn源和 CO2 作氧源 ,在 (0 0 0 2 )蓝宝石衬底上获得了沿 c轴取向高度一致的 Zn O单晶薄膜。通过对其吸收谱的曲线拟合 ,得到室温下 Zn O薄膜的光学带隙为 3 .2 45e V。在样品的室温光荧光谱 (PL)中观察到对应于带边发射的较强的发光峰 ,对样品中蓝带的产生原因进行了讨论     

芴类衍生物有机电致发光器件中的激基复合物

利用紫外-可见光吸收光谱和荧光发光(PL)光谱,研究了新型芴类小分子材料2,3-bis(9,9-dihexyl-9H-flu-oren-2-yl)-6,7-difluoroquinoxaline(F2Py)的本征光谱特性,并制备了基于F2Py的有机电致发光器件(OLEDs),讨论了器件的电致发光(EL)光谱。结果表明,F2Py在溶液状态下的本征PL峰值位于452 nm,在薄膜状态下的本征PL峰值位于448 nm,而F2Py与NPB的混合物的PL发光峰在544 nm。在器件的EL光谱中,观察到了位于530~550 nm范围的激基复合物发光峰,以及来自F2Py与NPB激子发光的共同作用形成的位于430nm左右的肩峰。当F2Py层厚度为50 nm时,器件的启亮电压为17 V,最高亮度为58 cd/m2;而当F2Py厚度为20 nm并加入了Alq3(10 nm)做电子传输层(ETL)时,器件启亮电压为8 V,最高亮度为5030 cd/m2,EL性能大大提高。     

掺Al对ZnO薄膜发光性能的调控作用

采用溶胶-凝胶法，在玻璃上制备了不同掺Al浓度的ZnO薄膜。x射线衍射（XRD）结果表明，所制备的薄膜具有c轴择优取向，随着掺Al浓度的增加，（002）峰向低角移动，峰强逐渐减弱。探讨了掺Al对ZnO薄膜发光性能的调控作用，薄膜的透射谱表明：通过改变掺Al浓度，可以提高ZnO薄膜的紫外光透过率，使其吸收边向短波长方向的移动被控制在一定的范围内，从而使薄膜禁带宽度连续可凋；薄膜的光致发光（PL）谱显示：纯ZnO薄膜的PL谱是由紫外激子发光和深能级缺陷发光组成，通过掺Al有助于减少薄膜的缺陷，减弱深能级的缺陷发光，同时紫外带边发射的峰位向高能侧蓝移，与吸收边缘移动的结果相吻合，由紫外发光峰位获得的光禁带与通过透射谱拟合得到的光禁带基本一致。     

氧化锌纳米棒中自发辐射的回音壁模腔增强

应用气相传输法制备了氧化锌纳米线和具有六方对称截面的纳米棒,利用电子扫瞄显微镜,X-射线衍射仪等进行形貌与结构表征。室温下,用355nm激光脉冲,以260 W/cm2相同光强激励条件,分别测量其光致发光(PL)谱,在棒状样品中发现393nm有发光峰,而线状样品是在382nm处。二者相比,棒状样品的紫光波段自发辐射光强增加、频谱展宽、中心波长红移和绿光波段辐射被显著抑制。基于半导体材料的能带理论、激子复合发光理论和费米黄金定则等,对样品PL谱差异原因进行理论分析,结果表明上述现象源于棒状样品中回音壁模谐振腔(WGMRs)的自发辐射增加。利用强激励条件下样品光致发光谱,验证了实验结果与理论分析结果较好吻合。     

多孔硅衬底上ZnS薄膜的白光光致发光

通过脉冲激光沉积（PLD）技术在多孔硅（PS）衬底上制备了ZnS薄膜。用光致发光（PL）的方法观察到白光发射,这个白光是由ZnS薄膜的蓝、绿光和PS的红光叠加形成的。白光光致发光谱是一个从450nm 到700nm的较强的可见光宽谱带。同时研究了激发波长、ZnS薄膜的生长温度、PS的孔隙率和退火温度对ZnS/PS光致发光谱的影响。     

White light photoluminescence from ZnS films on porous Si substrates

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique.White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.     

Amplified Spontaneous Green Emission and Lasing Emission From Carbon Nanoparticles

In this work, the optical properties of carbon nanoparticles (CNPs) can be modulated by the dopant‐N atom and sp² C‐contents. CNPs prepared with the low urea mass ratio of 0.2:1 (CNP1) exhibit blue emission (maximum PL quantum yield: 15%). Increasing sp² C‐ and dopant‐N atom contents, as determined in CNPs prepared with high urea mass ratio of 2:1 (CNP2), lead to green emission (maximum PL quantum yield up to 36% in ethanol aqueous solution). Amplified spontaneous emission (ASE) can be observed only in CNP2 ethanol aqueous solution. Green lasing emission is achieved from CNP2 ethanol aqueous solution in a linear long Fabry‐Perot cavity, indicating the potential of CNP2 as a gain medium for lasing. CNP2 shows superior photostability compared with C545T dye. The green emission from CNP2 is speculated to arise from electron‐hole recombination (intrinsic state emission). The high PL quantum yield and small overlap between absorption and emissions of CNP2 ethanol aqueous solution are the key factors in realizing lasing emission.     

Si衬底上MgxZn1-xO薄膜发光特性研究

采用射频磁控溅射（RFMS）法，在Si衬底上生长出具有（002）择优取向的MgxZn1-xO薄膜。透射光谱结果表明，与ZnO相比，MgxZn1-xO薄膜的吸收带边从378nm蓝移至308nm，这说明MgxZn1-xO薄膜的带隙随着Mg组分的增加而加宽。扫描电镜（SEM）能谱分析表明，薄膜中的Mg含量比靶源中的高。用不同波长的光激发得到的光致发光（PL）潜显示，在不同波长的光激励下，只出现单色蓝或绿发光峰，其它的发光峰消失，而且随着激发光波长从260nm、280nm到300nm的增加，发光峰位置分别从431nm、459nm红移至489nm，发光强度也显著增强。分析表明，这些发光峰与O空位有关。     

Stabilized Blue Emission from Polyfluorene‐Based Light‐Emitting Diodes: Elimination of Fluorenone Defects

Polyfluorene (PF)‐based light‐emitting diodes (LEDs) typically exhibit device degradation under operation with the emergence of a strong low‐energy emission band (at ～ 2.2–2.4 eV). This longer wavelength band converts the desired blue emission to blue–green or even yellow. We have studied both the photoluminescence (PL) and electroluminescence (EL) of PFs with different molecular structures and found that the low‐energy emission band originates from fluorenone defects which are introduced by photo‐oxidization, thermal oxidation, or during device fabrication. X‐ray photo‐emission spectroscopy (XPS) results show that the oxidation of PF is strongly catalyzed by the presence of calcium. The fluorenone defects generate a stronger contribution to the EL than to the PL. By utilization of a novel electron‐transporting material as a buffer layer between the emissive PF and the Ca/Ag (Ba/Ag) cathode, the blue EL emission from the PF was stabilized.     

Stable Blue Emission from a Polyfluorene/Layered‐Compound Guest/Host Nanocomposite

In this study a blue‐light‐emitting conjugated polymer, poly(9,9‐dioctylfluorene), is confined to the interlayer space of inorganic, layered metal dichalcogenide materials, metallic MoS₂, and semiconducting SnS₂. The nanocomposites are prepared through Li intercalation into the inorganic compound, exfoliation, and restacking in the presence of the polymer. X‐ray diffraction and optical absorption measurements indicate that a single conjugated polymer monolayer, with an overall extended planar morphology conformation, is isolated between the inorganic sheets, so that polymer aggregation or π–π interchain interactions are significantly reduced. Photoluminescence (PL) measurements show that the appearance of the undesirable green emission observed in pristine polymer films is suppressed by incorporating the polymer into the inorganic matrix. The blue emission of the intercalated polymer is stable for extended periods of time, over two years, under ambient conditions. Furthermore, the green emission is absent in the PL spectra of nanocomposite films heated at 100 °C for 7 h in air with direct excitation of the keto defect. Finally, no green emission was observed in the electroluminescence spectrum of light‐emitting devices fabricated with a polymer‐intercalated SnS₂ nanocomposite film. These results support the proposed hypothesis that fluorenone defects alone are insufficient to generate the green emission and that interchain interactions are also required.     

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with increasing V doping level. We also observed that the peak position of the blue luminescence shifted at lower energy with decreasing excitation density. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity. This observation is explained by a reaction involving V and gallium vacancy (_√Ga). PL spectra at low temperature exhibited a series of peaks. The donor-acceptor (D-A) pair emission peak at 3.27 eV was strongly pronounced, as the temperature was decreased. On the other hand, the intensity of the BB emission decreased. This BB emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV.     

Organic Light‐Emitting Diodes with a White‐Emitting Molecule: Emission Mechanism and Device Characteristics

The unique and unprecedented electroluminescence behavior of the white‐emitting molecule 3‐(1‐(4‐(4‐(2‐(2‐hydroxyphenyl)‐4,5‐diphenyl‐1H‐imidazol‐1‐yl)phenoxy)phenyl)‐4,5‐diphenyl‐1H‐imidazol‐2‐yl)naphthalen‐2‐ol (W1), fluorescence emission from which is controlled by the excited‐state intramolecular proton transfer (ESIPT) is investigated. W1 is composed of covalently linked blue‐ and yellow‐color emitting ESIPT moieties between which energy transfer is entirely frustrated. It is demonstrated that different emission colors (blue, yellow, and white) can be generated from the identical emitter W1 in organic light‐emitting diode (OLED) devices. Charge trapping mechanism is proposed to explain such a unique color‐tuned emission from W1. Finally, the device structure to create a color‐stable, color reproducible, and simple‐structured white organic light‐emitting diode (WOLED) using W1 is investigated. The maximum luminance efficiency, power efficiency, and luminance of the WOLED were 3.10 cd A^?1, 2.20 lm W^?1, 1 092 cd m^?2, respectively. The WOLED shows white‐light emission with the Commission Internationale de l′Eclairage (CIE) chromaticity coordinates (0.343, 0.291) at a current level of 10 mA cm^?2. The emission color is high stability, with a change of the CIE chromaticity coordinates as small as (0.028, 0.028) when the current level is varied from 10 to 100 mA cm^?2.     

Organic Light‐Emitting Diodes: Organic Light‐Emitting Diodes with a White‐Emitting Molecule: Emission Mechanism and Device Characteristics (Adv. Funct. Mater. 4/2011)

The unique and unprecedented electroluminescence behavior of the white‐emitting molecule 3‐(1‐(4‐(4‐(2‐(2‐hydroxyphenyl)‐4,5‐diphenyl‐1H‐imidazol‐1‐yl)phenoxy)phenyl)‐4,5‐diphenyl‐1H‐imidazol‐2‐yl)naphthalen‐2‐ol (W1), fluorescence emission from which is controlled by the excited‐state intramolecular proton transfer (ESIPT) is investigated. W1 is composed of covalently linked blue‐ and yellow‐color emitting ESIPT moieties between which energy transfer is entirely frustrated. It is demonstrated that different emission colors (blue, yellow, and white) can be generated from the identical emitter W1 in organic light‐emitting diode (OLED) devices. Charge trapping mechanism is proposed to explain such a unique color‐tuned emission from W1. Finally, the device structure to create a color‐stable, color reproducible, and simple‐structured white organic light‐emitting diode (WOLED) using W1 is investigated. The maximum luminance efficiency, power efficiency, and luminance of the WOLED were 3.10 cd A^?1, 2.20 lm W^?1, 1 092 cd m^?2, respectively. The WOLED shows white‐light emission with the Commission Internationale de l′Eclairage (CIE) chromaticity coordinates (0.343, 0.291) at a current level of 10 mA cm^?2. The emission color is high stability, with a change of the CIE chromaticity coordinates as small as (0.028, 0.028) when the current level is varied from 10 to 100 mA cm^?2.