可调谐多波长布里渊随机光纤激光器

提出了一种可调谐多波长布里渊随机光纤激光器,其具有半开腔结构,一端利用3dB耦合器构成全反端,另一端利用单模光纤中随机分布的瑞利散射作为反射,经掺铒光纤放大器放大后的布里渊抽运光,在长单模光纤中形成级联的高阶受激布里渊散射,即实现多波长布里渊随机激光输出。实验结果表明:当布里渊抽运波长为1530nm时,从该激光器最多可获得7个斯托克斯波长的随机激光输出;通过改变布里渊抽运功率及掺铒光纤抽运激光功率,研究了功率的大小对多波长随机激光输出的影响。此外,通过改变布里渊抽运激光波长,实现了多波长布里渊随机激光在1515~1565nm范围内的调谐。     

一种新颖的自反馈光注入单频窄线宽光纤激光器

报道一种基于自反馈光注入的单频窄线宽光纤激光器。激光器采用线形腔结构,用高掺杂Er3+光纤作为增益介质,利用输出信号光分束反馈与腔内振荡激光干涉,形成折射率光栅与增益光栅共同作用选择纵模,获得稳定的1 549.85 nm单频窄线宽激光输出。在975 nm单模激光二极管(LD)抽运下,激光器的抽运阈值光功率为13 mW。当抽运光功率为112 mW时,最大输出信号光功率为30.6 mW,对应的光-光转换效率为27.3%,斜率效率为30.2%,信噪比大于50 dB。采用延时自外差方法测量线宽,当使用30 km单模光纤延迟线时,测量得到激光器的3 dB线宽为4.0 kHz。     

基于半开放腔的可调谐多波长随机光纤激光器研究

提出了一种具有可调谐特性的半开放腔多波长随机光纤激光器,利用单模光纤和环形结构组成半开放腔结构,通过改变布里渊抽运激光波长实现输出随机激光的可调谐特性。结果表明,当布里渊抽运波长为1550.01 nm时,该激光器最多可以实现4个波长的随机激光输出,且可以通过控制掺铒光纤放大器的输出功率来精确控制输出随机激光波长数目,其一阶至四阶斯托克斯光的阈值功率分别为12、31.6、73、610 m W。其中,一阶斯托克斯光的斜率效率可达12.5%。固定掺铒光纤放大器的输出功率为631 m W时,随着随机分布反馈光纤长度的增加,随机激光输出功率成指数下降。该激光器的输出波长可在1528~1580 nm的波长范围内调谐。此外,半开放腔的结构设计有效地消除了输出光谱中奇数和偶数阶斯托克斯光的峰值功率差异。     

基于双波长布里渊光纤激光器的微波信号产生

提出一种新颖的基于双波长布里渊光纤激光器产生微波信号源的结构,通过调节偏振控制器(PC)产生稳定输出的双波长光信号,利用输出的双波长产生10.75GHz的微波信号。一段10km长的普通单模光纤(SMF)作为布里渊增益介质,一段4m长未抽运的保偏掺铒光纤(PM-EDF)和一个由2×2的3dB耦合器组成的微环结构用来抑制边模,一个超窄线宽的分布反馈(DFB)激光器作为布里渊抽运(BP)源。产生的10.75GHz的微波信号通过50GHz带宽的光电探测器(PD)拍频并通过电频谱分析仪(ESA)观测,产生的微波信号线宽约为600kHz。     

复合滤波结构的窄线宽高频微波信号产生装置

为了在较低泵浦功率下实现单纵模双波长激光信号的输出,进而获得窄线宽的高频微波信号,设计并实验了一种基于复合滤波结构的窄线宽高频微波信号产生装置。通过8字腔结构布里渊增益腔和反射式光纤光栅构成的波长选择滤波器实现了4倍布里渊频移间隔的双波长斯托克斯光信号输出,采用200 m长单模光纤作为增益介质,同时与50 m长单模光纤构成级联光纤环结构,采用三端口耦合器与2 m长未泵浦的保偏掺铒光纤构成萨格纳克环结构,利用级联光纤环结构和萨格纳克环结构的复合滤波作用实现了斯托克斯光信号模式的选择,使输出的斯托克斯光信号由多纵模运行状态变为单纵模运行状态。实验证明:通过对输出的单纵模双波长斯托克斯光信号进行拍频检测可得42.85 GHz的高频微波信号产生,线宽为38 kHz;通过改变可调谐泵浦激光器的输出波长,可实现42.25~43.51 GHz范围内的频率调谐;通过稳定性测试,产生的42.85 GHz高频微波信号的频率变化在0.83 MHz内,峰值功率变化在±0.8 dB内,稳定性良好,满足实际应用需求。     

一种线形腔的多波长布里渊掺铒光纤激光器

布里渊掺铒光纤激光器(BEFL)是一种利用非线性效应——布里渊散射来实现多波长输出的激光器,波长间隔大约为0.088 nm(11 GHz).研究了一种多波长布里渊掺铒光纤激光器线形结构,通过引入反馈实现多波长输出.在布里渊泵浦功率为11 mW,980 nm泵浦功率为12 mW时获得了波长间隔为0.08 nm的34个波长的激光输出以及1 525～1 570 nm可调谐范围.并通过调节980 nm抽运光功率以及布里渊泵浦光波长,实现了可调谐的多波长输出.还研究了980 nm抽运光功率对产生的斯托克斯光波数的影响.     

基于无源腔多波长单模布里渊光纤激光器

为了实现一种单模多波长布里渊光纤激光器,采用了将掺铒光纤放大器放置于1个10m左右的无源光纤振荡腔外,各阶布里渊激光通过耦合器可反馈回送到掺铒光纤放大器中再次放大,作为下一阶布里渊激光的抽运光来产生多阶布里渊激光的方法,并进行了理论分析和实验验证。结果表明,在现有掺铒光纤放大器输出功率的水平,在这种多波长单模布里渊光纤激光器中观察到了7个布里渊激光波长。预计其在光生微波、密集波分复用系统、光学惯性旋转传感和超高精度光谱分析等领域将会有着极其广泛的应用。     

宽带可调谐双频移多波长布里渊光纤激光器

提出了一种采用高非线性光纤作为布里渊增益介质 的双倍布里渊频移间隔的多波长布里渊光纤激光器(MW-BEFL)。激光器利用两个环形器构成 双倍频移结构,将奇数阶的斯托克斯信号隔离在腔内循环,仅有泵浦 信号和偶数阶的斯托克斯信号能够耦合输出,实现了双倍布里渊频移的多波长输出。激光器 腔内没有引入 任何的有源增益介质对斯托克斯信号进行放大,消除了腔内自激模的影响。激光器的调谐范 围由布里渊泵 浦的工作波长和掺铒光纤放大器(EDFA)的增益带宽决定。实验中,在布里渊 抽运 功率为0dBm、EDFA的输出功率为20 dBm的情况下,在1536~1605nm之间得到双频移间隔的多 波长输出,调谐范围是69nm。     

多波长布里渊掺铒光纤激光器的结构优化研究

基于受激布里渊散射效应(SBS)和掺铒光纤(EDF)的线性增益机理研究了一种环形腔多波长布里渊掺铒光纤激光器(BEFL)。在该激光器中使用单模光纤作为布里渊增益介质,使用掺铒光纤来放大产生的斯托克斯(Stokes)信号,使该激光器在室温下产生稳定的多波长输出。通过对激光器结构中的环行器和耦合器的位置以及耦合器的接入方式的研究与分析发现:耦合器的接入方式、环行器与耦合器的位置均对激光器的输出有影响。在可调谐光源TLS(布里渊泵浦激光器)的功率大小为14dBm,980nm泵浦激光器的功率大小为23dBm,单模光纤长度为10km的情况下进行了实验测试,结果表明:耦合器的接入方式对BEFL的输出影响很明显,最后给出了详细的测试结果和相应解释。     

波长间隔可调谐多波长光纤光学参量振荡器

提出并实现了一种以高非线性色散位移光纤为增益介质,以光栅对形成谐振腔,简单线形结构的连续光抽运的波长间隔可调谐多波长光纤光学参量振荡器(MW-FOPO)。采用波长可调谐的窄线宽激光器作为抽运种子光源,以伪随机相位调制抽运光来抑制高非线性光纤中的受激布里渊(SBS)散射效应,结合高功率掺铒光纤放大器构成光纤光学参量振荡器的大功率抽运,通过四波混频(FWM)效应获得了室温下稳定的多波长激光输出。MW-FOPO的波长间隔可以通过调节抽运波长进行调谐。在1505~1615 nm光谱范围内,获得了17条消光比大于10 dB的多波长谱线。实验证明了MW-FOPO实现多波长激光光源的优异特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.