Characterization of single-event multiple cell upsets in a custom SRAM in a 65 nm triple-well CMOS technology

In this paper, the characterization of single event multiple cell upsets(MCUs) in a custom SRAM is performed in a 65 nm triple-well CMOS technology, and O(linear energy transfer(LET) = 3.1 Me V cm2/mg), Ti(LET = 22.2 Me V cm2/mg) and Ge(LET = 37.4 Me V cm2/mg) particles are employed. The experimental results show that the percentage of MCU events in total upset events is 71.11%, 83.47% and 85.53% at O, Ti and Ge exposures. Moreover, due to the vertical well isolation layout, 100%(O), 100%(Ti) and 98.11%(Ge) MCU cluster just present at one or two adjacent columns, but there are still 4 cell upsets in one MCU cluster appearing on the same word wire. The characterization indicates that MCUs have become the main source of soft errors in SRAM, and even though combining the storage array interleaving distance(ID) scheme with the error detection and correction(EDAC) technique, the MCUs cannot be completely eliminated, new radiation hardened by design techniques still need to be further studied.     

Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices

FinFET technologies are becoming the mainstream process as technology scales down. Based on 28-nm bulk-Si FinFETs and planar transistors, three-dimensional technology computer-aided design (TCAD) simulations are performed to investigate the charge collection mechanisms and single-event transient (SET) pulse widths for nanoscale devices. Simulation results show that charge collection and SET pulse widths for FinFETs are smaller than those of the planar device. An overall analysis indicates that for P-hits, the reduced charge collection in p-FinFET is induced mainly by the narrow sensitivity drain volumes when ion linear energy transfer (LETs) less than 20 MeV cm²/mg; however, the parasitic bipolar amplification effect presents an important effect on the charge reduction for higher ion LETs. An in-depth analysis shows that the reduced bipolar amplification effect in p-FinFET is owing to the conduction channel (fin body) rather than source/drain region. Due to a parasitic reversed bipolar effect, the single-event response for N-hit is less sensitive than that for P-hit. Moreover, comparisons of the temperature dependence of SET pulse width in both FinFETs and planar devices is carried out, which indicate that the SET pulse width in PMOS shows stronger temperature dependence than that in p-FinFET. This gives a new insight into the single-event effects (SEE) in FinFETs, which can provide guidelines for future radiation-hardened applications of FinFET-based circuits.     

P-doped germanium nanowires with Fano-broadening in Raman spectrum

The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm~(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm~(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.     

一种无毛刺DLL型90°移相器设计

延时锁相环(delay look loop,DLL)型90°移相器广泛应用于双倍数据率同步动态存储器(double data rate synchronous dynamic random access memory,DDR SDRAM)中对时钟信号进行90°相移,实现数据双沿采样,以提高数据传输速率.数控延时线是DLL型90°移相器的重要组成部分.为解决传统数控延时线在延时调节过程中产生毛刺的问题,分析了传统数控延时线产生毛刺的原因,并提出一种结合锁存器和时钟门控单元的无毛刺数控延时线.引入锁存器和时钟门控使该无毛刺数控延时线的数字控制信号有序进行状态切换,达到抑制毛刺产生的目的.另外,将提出的无毛刺数控延时线应用于DLL型90°移相器中,成功消除了90°相移时钟的毛刺.设计采用SMIC 65 nm工艺来实现,供电电压为1.2 V,版图面积为0.018 mm~2,用HSPICE进行仿真,结果表明:该移相器的工作频率范围为217 MHz～1 GHz,工作在1 GHz时,功耗为2.8 mW;供电电压添加100 MHz 30 mV正弦波噪声时,90°相移时钟的抖动峰峰值和均方根值分别为17.77 ps和5.16 ps.而且,移相器在进行工艺、电压、温度(process-voltage-temperature,PVT)跟随调节过程中,输出的90°相移时钟可有效避免毛刺问题.     

Preparation of Mg-Ti System Alloy and FGM with Density Gradient by Spark Plasma Sintering Technique

A new kind of functionally graded materials (FGM) with density gradient has come to show great potentials as flier-plates for creating quasi- isotropic compression waves. In order to meet the demand of lower density in the front face for such flier-plate, Mg with a low density of 1.74g/cm^3 is selected to make a Mg-Ti FGM. Mg- Ti alloys with various weight ratios were siatered by spark plasma sintering ( SPS ) technique at relative low temperatures, and the processing of densification is mainly investigated. It is found that, up to 75wt% Ti , the Mg- Ti alloys can be fully densified at 560℃ due to the conglutinnation of Mg and the formation of a small amount of Mg- Ti solid solution. Finally, the Mg- Ti FGM with a density gradient from 1.74g/cm^3 to 3.23 g/cm^3 is successfully fabricated.     

基于65 nm体硅CMOS技术的DICE-DFF和TMR-DFF SEU辐射硬化方法分析

基于65 nm体硅CMOS工艺,采用移位寄存器链方式对普通触发器(DFF)、2种双互锁触发器(DICE-DFF,FDICE-DFF)、普通触发器空间三模冗余(TMR-DFF)和2种普通触发器时间三模冗余(TTMR-DFF300,TTMR-DFF600)这6种结构进行单粒子翻转(SEU)性能试验评估。利用Ti、Cu、Br、I、Au和Bi这6种离子对被测电路进行轰击,试验结果表明,普通触发器单粒子翻转截面最大,约为3.5×10?8～1.7×10?7 cm2/bit;时钟间隔时间600 ps的时间三模冗余结构触发器单粒子翻转截面最小,约为5×10?11～7×10?10 cm2/bit,仅为普通触发器的0.1%左右。同时,针对6种触发器单元,从速度、面积、晶体管数量以及抗SEU性能多方面进行综合分析,为后续超大规模集成电路抗SEU设计提供了一定的指导意义。     

The corrosion behavior of nano-meter embedded phase in Ti implanted H13 steel

On the SEM micrographs of Ti implanted H13 steel, a tree-branch-like structure can be observed. Further investigation with TEM shows that the newly tormed composition is a formation of nann-meter FeTi_2 phase in Ti implanted layer. The layer with a relatively high corrosion resistance has been formed in Ti implanted H13 steel with this structure.The results of electrochemical measurement show that the corrosion current density decreases obviously with an increase of ion dose. The corrosion current density in Ti implanted steel with a dose of 1.3×10~(18)/cm~2 is 8-20 times less than that of Ti implanted steel with a dose of 6×10~(17)/cm~2. The corrosion behavior of Ti implanted steel with a dose of 6×10~(17)/cm~2 could be further improved as the sample was annealed at 500℃ for 20 min and the corrosion current density decreases by 48-80 times compared to that of non-implanted samples. The corrosion trace was not observed on the annealing sample by SEM, after multi-sweep cyclic voltammetry of 40 cycles     

Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.     

CdS quantum dots-sensitized TiO2 nanotube arrays for solar cells

CdS quantum dots(QDs) sensitized TiO2 nanotube arrays photoelectrodes were investigated for their photovoltaic performance of quantum dots-sensitized solar cells. The highly ordered TiO2 nanotube arrays(TNAs) were synthesized on Ti foils by anodic oxidation method. Then CdS quantum dots were deposited onto the TiO2 nanotube arrays by successive ionic layer absorption and reaction(SILAR) method to serve as the sensitizers. Cd(NO3)2 and Na2S were used as the precursor materials of Cd+ and S2- ions, respectively. It is found that the CdS QDs sensitizer may significantly increase the light response of TiO2 nanotube arrays. With increasing CdS QDs deposition cycles, the visible light response increases. Maximum photocurrent was obtained for the QDs that have an absorption peak at about 500 nm. Under AM 1.5 G illuminations(100 mW cm-2), a 4.85 mA/cm2 short circuit current density was achieved, and the maximium energy conversion efficiency of the as-prepared CdS QDs-sensitized TNAs solar cells was obtained as high as 0.81 % at five SILAR cycles.     

Framework and development of digital China

High energy electron is a kind of sources to be detected in the geospace environment. Generally, the particle telescope with much thick semiconductor detector is used as the sensor for energetic electrons because they can penetrate deeply into the detector. The more energy of the electrons is, the deeper they can penetrate into, so that the geometric factor varies with energy of the incident electrons. We discuss the geometric factor of particle radiation detector (PRD), which is a payload on ZY-1 (CBERS-1 and CBERS-2) satellites to monitor the high energy particle radiation inside the satellites. According to the NASA’s AE8 model, the geometric factors of electrons for the low energy bin (0.5–1.0 MeV) and the high energy bin (> 2.0 MeV) are 2.468 and 1.736 cm²·sr, respectively. These results are much different from the traditional calculation of the geometric factor that is 1.18 cm²·sr. The angle-response function of the telescope is also derived, which can be useful for design of the telescope and analysis of the directional distribution. Supported by the National Natural Science Foundation of China (Grant No. 40674097) and Co-constructing Foundation of Beijing Municipal Commission of Education (Grant No. XK100010404)     

Optical, mechanical and laser-induced damage threshold properties of 1 064 nm, 532 nm frequency-doubled antireflection coating for LBO

1 064 nm, 532 nm frequency-doubled antireflection (AR) coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate (LiB3O5 or LBO) crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold (LIDT) of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.     

增益恒定的数控振荡器设计

针对驱动能力可调的数控振荡器在输出频率范围内增益变化较大的问题,提出了一种电路设计方法,通过该方法设计出的数控振荡器结构具有增益恒定的特点。在SMIC 0.18 μm logic 1P6M CMOS工艺下设计并实现了一个采用该振荡器结构的数控锁相环,数控振荡器的面积为0.025mm2。实测数据表明,该数控振荡器输出的频率范围为76～208MHz。当锁相环输出208MHz高频时钟时,四分频后的峰峰值抖动为110ps,均方根抖动为14.82ps,数控振荡器的功耗为1.512mW。     

Effect of interface layers on electron field emission properties of amorphous diamond films

Hydrogen-free high sp~3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm~2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.     

Preparation and characterization of mesoporous Al-MCM-41 layers deposited on FeCrAl metallic foils by an in-situ hydrothermal method

A new class of activated mesoporous Al-MCM-41 layers was deposited on FeCrAl metallic foils in the presence of cationic surfactant cetyltrimethylammonium bromide under basic conditions by an in-situ hydrothermal method. The characterization techniques including X-ray diffraction, nitrogen adsorption and transmission electron microscopy, as well as field-emission scanning electron microscopy were performed to investigate the pore structure and surface morphology of the Al-MCM-41 layers. The Al-MCM-41 materials are of amorphous structure but exhibit large BET surface area (up to 757.0 m²/g) and pore volume (up to 0.72 cm³/g), as well as a mean pore diameter of 3 nm. The layers deposited on the FeCrAl foils are continuous despite with a few of holes on the surface. Funded by the National Natural Science Foundation of China (No. 50502002), Scientific Research Common Program of Beijing Municipal Commission of Education (No. KM200610005016) and Youth Foundation of Beijing University of Technology (No.00190)     

Design of the low power wake-up receiver for internet of things communication

A wake-up receiver with high energy efficiency and low power consumption is proposed for solving the power consuming problems of wireless nodes communication in the Internet of Things. The proposed wake-up receiver based on the wake-up mechanism can effectively schedule the network nodes communication, and use the simple envelope detection structure to achieve frequency down-conversion, which can flexibly manage energy and reduce power consumption. Based on UMC 65nm CMOS process technology, the wake-up receiver is designed and simulated. The results show that it can achieve S₁₁ of -21dBm and a sensitivity of -75dBm at a data rate of 1Mb/s, when operating at the central frequency of 780MHz and input signal adopting an on-off keying (OOK) modulation, and the power consumption is 82μW at 1.2V voltage supply.     

一种具有延迟校准功能的可编程多相位时钟电路

基于延迟锁相环原理,提出了一种新型的具有延迟校准功能的可编程多相位时钟电路,能为工作在80MHz的电荷耦合器件信号处理器提供精度高达390ps的时序信号．将主时钟的单周期等分为32份,通过可编程相位组合电路,产生相位及占空比可调的信号,能满足不同电荷耦合器件所需的最优工作时序．传统的延迟锁相环结构随着延迟单元的增加,延迟单元之间不匹配愈加明显,导致输出相位偏离理想位置．引入延迟校准电路可以显著降低相位之间的误差,校准后的多相位时钟信号接入可编程相位组合器进行选择组合,产生所需的高精度时序信号．基于SMIC 0.18μm 3.3V CMOS工艺完成设计,在80MHz主时钟下的后仿真结果表明：电路可产生占空比范围为2％～98％的输出时钟,校准后的延迟误差小于5ps,边到边抖动为 1.14ps,有效地保证了相位精度．     

基于变压器反馈的平坦噪声系数超宽带CMOS低噪声放大器

在系统中集成超宽带(UWB)收发机芯片用于支持室内定位正成为移动通信终端技术发展的一个重要趋势.在超宽带收发机中,低噪声放大器(LNA)是一个核心功能模块.超宽带的全频段(3.1～10.6 GHz)覆盖要求给低噪声放大器的设计带来了巨大挑战,尤其是需要在宽带匹配及在带内维持平坦的噪声系数的情况下.传统的低噪声放大器架构应用在超宽带设计时,噪声、增益和输入匹配之间存在较明显的性能折中关系,因此无法达到良好的综合性能指标要求.本文采用基于变压器反馈的输入匹配的第一级架构和多功能第二级输出驱动结构,实现了平坦的噪声系数和高增益等性能.基于TSMC 65 nm工艺设计的电路仿真结果表明,该低噪声放大器在3.1～10.6 GHz全频段内,可实现输入匹配S_(11)-10 dB,增益17 dB,噪声系数2.71±0.28 dB,1-dB压缩点-17.5 dBm等指标,电路整体功耗为32.8 mW.因此,综合性能Ⅰ(FoM-Ⅰ)和综合性能Ⅱ(FoM-Ⅱ)分别可达2.32和0.41.     

Nanodiamond films deposited at moderate temperature on pure titanium substrate pretreated by ultrasonic scratching in diamond powder suspension

Nanocrystalline diamond （NCD） film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.     

Chemical modification of ethylacetoacetate with ASB in aqueous medium

Ethylacetoacetate (EAA) was mixed with aluminum sec-butoxide (ASB) in aqueous medium. The molar ratio among aluminum sec-butoxide, water, and ethylacetoacetate was 1:200:1. Water diluted nitric acid was added into the mixture until it finally transformed into transparent solution. TEM analysis showed that the surfaces of the colloidal particles with EAA were not as clean as those without EAA, implying the formation of a surface modification layer around the colloidal particle. The IR spectra analysis revealed that with the addition of EAA two characteristic peaks of EAA at 1 731 cm⁻¹ and 1 642 cm⁻¹ associated with C=O stretching vibrations were red-shifted to 1 619 cm⁻¹ and 1 530 cm⁻¹, respectively, indicating the occurrence of the chemical modification reaction among the C=O bonds of EAA and the surface Al-OH bonds of the particles., Furthermore it was confirmed by UV spectra analysis that the UV absorption band of EAA underwent 26 nm of red-shift as a result of the formation of the six-membered ring of the complex between ethylacetoacetate and ASB. It was examined that the chemical modification could be photolyzed by the UV illumination with a wavelength shorter than 270 nm due to the excitation of π − π * transition in the complex. Funded by the Doctoral Fund of University of Jinan (No. XBS0812)     

表面Ge沟道pMOSFET阈值电压模型

基于MOS器件的短沟道效应和漏致势垒降低效应理论,通过求解泊松方程,建立了表面Ge沟道pMOSFET的阈值电压模型.基于该模型对表面Ge沟道MOSFET器件的沟道长度、栅氧化层厚度、衬底掺杂浓度、SiGe虚拟衬底中的Ge含量等结构参数以及漏源电压对阈值电压的影响进行了模型模拟分析.模拟结果表明,当沟道长度小于200nm时,短沟道效应和漏致势垒降低效应对阈值电压影响较大,而当沟道长度超过500nm时,短沟道效应和漏致势垒降低效应对阈值电压的影响可以忽略.模型计算结果与实验结果吻合较好.