万法级MnO2/C超级电容器的组装及性能研究

采用固相法制备了MnO2,并对其结构进行表征。以所制备的MnO2作为电极活性物质,组装成超级电容器,对其电化学性质进行研究,结果表明,所组装超级电容器的等效串联电阻为1.875m?,功率密度为192W/kg,能量密度为2.306W·h/kg,电容器的充电电容为11671.4F,放电电容为11534.3F,充放电效率为98.8%,经多次循环后电容器性能良好。     

IOA备份电源控制器lC

LTC3350是一款超级电容器充电器和备份控制器IC,其包括了组成一个完整、独立和基于电容器的备份电源解决方案必需具备的所有功能。其在4．5～35V输入电压范围内工作,能够提供超过10A的充电／备份电流能力。该器件还为l～4个串联超级电容器组提供平衡和过压保护。     

16V／58F iMOD：超级电容器模块

Ioxus公司推出16V／58FiMOD系列超级电容器模块16V／58FiMOD超级电容器模块，旨在提供面向可再生能源发电系统的风电机组桨距控制、启动系统、汽车子系统、备用电源／不间断电源（UPS）／不间断运行以及功率调节等应用。     

20伏高电压型碳纳米管超级电容器的研制

通过催化裂解法制备了碳纳米管并进一步制备了碳纳米管膜片式电极.基于该种材料的超级电容器电极比容量达到42F/g并表现出良好的大电流放电特性.本文采用多种研究方法对基于该种材料的双电层电容器的电化学特性进行了详细的研究.本文还开发了全新的超级电容器组装工艺,采用该工艺组装的碳纳米管超级电容器工作电压可以达到20V并具有良好的容量特性和阻抗特性.     

恒定电压、恒定电流DC／DC转换器

LT3956为作为恒定电流和恒定电压稳压器工作而设计,非常适用于驱动大电流LED以及给电池和超级电容器充电。性能特点：3000：1 True Color PWM调光;输入电压为4．5～80V;输出电压高达80V;内部3．3A／84V开关;恒定电流和恒定电压调节;250mV高压侧电流检测;     

机电组件

0632097油浸式变压器在线监测与保护装置[刊,中]／马少华／／沈阳工业大学学报．-2006,28(4)．-426-429(C) 0632098车用超级电容器应用设计[刊,中]／张臣／／电源技术．-2006,30(9)．-740-743(D)文章探讨了几个在设计过程中需要注意的参数．然后举例说明了在不同情况下超级电容的设计方法。通过这些设计示例,能够充分了解超级电容使用的场合及其特点。参5 0632099脉冲电沆注入法求多芯电缆的传输函数[刊,中]／周启明／／信息与电子工程．-2006,4(4)．-254-257(L)在缆线的高空磁脉冲HEMP耦合试验研究中,为得到电流注入法与辐射法之间不同波形皮电流的耦合等效关系．将电流注入法时域测量与理论分析相结合,以九芯电缆为例通过芯电压与皮电流的关系求取多芯电缆传输函数。Matlab计算结果表明,通过脉冲电流     

超级电容器用竹炭的制备及其电容性能

以竹材为原料,在高温Ar保护下制备了高比表面积超级电容器用竹炭材料。用XRD和SEM对所制竹炭进行了物相分析和形貌观察;用循环伏安、恒电流充放电和交流阻抗谱研究了炭化温度对所制超级电容器性能的影响。结果表明:所得竹炭为无定形结构,随着炭化温度的升高,竹炭中石墨微晶向有序态结构发展。炭化温度为500℃时,制备的竹炭电性能最佳。在125mA/g电流密度下的首次放电比电容为226F/g;即使在500mA/g的大电流密度下,其放电比电容仍高达184F/g,第1000次循环时其放电比电容为138F/g,每次循环电容衰减仅为0.046F/g。     

电容器

0622723 NiO/AC非对称超级电容器的研究[刊,中]/庄凯//西华大学学报(自然科学版)．—2006,26(1)．—6-7,13 (G)通过热处理球形Ni(OH)_2得到NiO粉末,将其作为正极与活性炭(AC)负极组装成非对称超级电容器,用恒流充放电测试分析了超级电容器的电容特性。讨论了正负极活性物质比例、充放电电流和热处理时间对超级电容器比电容量、内阻的影响。结果表明：正负极活性物质比为1：3,工作电流密度为200mA/g,当Ni (OH)_2的热处理时间为2h,充电电压为1．3V时,超级电容器的双电极比电容量可达7．15F/g。参9 0622724一种新颖的串联超级电容器组的电压均衡方法[刊,     

能平衡串联电容电荷的存储器终结IC

作为目前最有趣的元件家族之一，高值电容器提供的额定范围是十分之几法拉至数十法拉．但是工作电压较低。例如．Maxwell公司的PC10超级电容器占用的面积大约相当于一枚大尺寸邮票．厚度相当于四枚堆叠在一起的25美分硬币。PC10提供10法拉电容、2．5A最大放电电流额定值、18ESR（等效串联电阻）。但是．它的额定工作电压仅为2．5V。     

不同电解质对LiNi1/3Co1/3Mn1/3O2/AC超级电容器性能的影响

在以LiNi1/3Co1/3Mn1/3O2为正极,活性炭(AC)为负极的混合型锂离子超级电容器体系中,研究以LiBF4和Et4NBF4的不同配比混合为溶质的乙腈(Acetonitrile,AN)电解液对超级电容器性能的影响。结果表明,随着电解液中Et4NBF4与LiBF4的比值的增大,LiNi1/3Co1/3Mn1/3O2/AC体系超级电容器的线性放电区间逐渐变窄,循环性能逐渐变差。其中采用1 mol/L的LiBF4/AN为电解液的超级电容器的综合性能较好,其线性放电区间为0~2.7 V,倍率性能也较好,最大比功率达到23 600 W/kg,经3 000次循环后容量保持率为93.2%。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.