基于功率谱AR模型的3D激光虚拟图像重建研究

当前常用的无样本图像重建方法具有分辨率低的弊端,有样本图像重建方法得到的3D激光虚拟图像重建结果有很大误差。为此,提出一种基于功率谱AR模型的3D激光虚拟图像重建方法。建立功率谱AR模型,将Burg技术和自相关法结合在一起,得到合理的AR模型参数。在存在平移、旋转参数的情况下,在功率谱AR模型基础上对图像进行配准处理,先完成旋转步长,然后进行平移估计与步长,以提高旋转配准精度与平移配准精度。将3D激光虚拟图像信息看作希尔伯特空间的元素,依据配准结果,在重建的3D激光虚拟图像重建视觉效果达到要求或连续若干次迭代结果改变情况区域稳定的情况下,结束迭代,实现3D激光虚拟图像重建。经验证,所提方法重建精度最低为97%,重建误差最低为2%,而且重建花费时间较短,证明了本文方法在图像重建方面的优越性,可应用于图像重建的相关工作中。     

旋转扫描序列图像的投影矩阵和拼接应用

利用8参数投影矩阵(单应性矩阵)拼接旋转扫描序列图像的方法,由于矩阵估计误差的影响,配准精度不高,易导致拼接图像中的景物歪斜.针对这一问题,通过研究相机拍摄旋转扫描序列图像的透视关系,推导了一种5参数的投影矩阵,减少了单应性矩阵中8个参数之间的相关性,从而降低了投影矩阵估计误差对全景图拼接的影响,提高了配准精度.图像拼接实验结果显示,应用该5参数投影矩阵得到的全景图,能够保证场景正直,配准精度较高,视觉效果良好.     

反射层析激光雷达实现小远目标超分辨成像

<正>反射层析激光雷达是一种新型成像探测技术手段,探测系统发射脉冲激光束对目标进行全覆盖,通过其与目标之间的相对运动,多角度准确获取包含目标表面反射分布信息的回波数据,并解算得到反射系数投影分布。根据傅里叶切片定理,投影数据的一维傅里叶变换和目标投影图像的二维傅里叶变换相等,利用专用算法进行重构处理,从而实现激光垂轴方向的目标投影成像。该成像方式在激光回波信噪比足够大的情况下,成像分辨率与探测距离、系统孔径无关,而主要与激光脉冲宽度、探测电路带宽和采集系统采样率有关。     

铸币图像配准算法的设计与实现

铸币图像的配准是基于图像识别的真伪币鉴别及瑕疵检测的重要步骤.针对铸币图像的特点,提出使用边缘纹理替代灰度信息作为图像配准的特征;配准算法使用极坐标系投影等多种积分投影方法,通过计算样本图像与模板图像投影曲线的互相关函数与最大互相关参数得到平移、旋转、缩放参数,并以多次迭代,实现铸币样本图像与模板图像的精确配准,为基于图像识别的真伪币鉴别及瑕疵检测提供良好基础.     

一种基于彩色伪随机编码图像的配准方法

在基于彩色伪随机编码的三维重构测量中,由于相机视场有限,无法一次清晰地得到被测物体的表面编码投影图像,必须对所得图像进行配准拼接.一般的配准方法都是基于灰度图像.而伪随机编码投影图像具有特有的颜色特征,基于此种投影编码图片提出了一种新配准方法,对于此类图像能进行很好的配准.     

前视成像雷达图像序列配准算法研究

为解决前视阵列成像雷达中图像序列的配准问题,该文将前视阵列雷达的成像原理与Hausdorff距离有机结合,提出一种图像序列配准方法。该方法基于传感器信息、图像分辨率校正和回波域Hausdorff距离,首先利用传感器信息估计出图像间的距离向偏移,在此基础上修正天线孔径长度并校正序列图像分辨率。为解决地雷目标各向同性造成的角度估计困难,使用Hausdorff距离对序列图像实施配准。结合前视阵列雷达的成像原理,将Hausdorff距离从图像域映射到回波域,实现分辨率校正与配准的统一,提高配准速度和精度。通过实测数据验证,该方法适用于前视阵列成像雷达,能够提高图像序列配准精度,改善系统检测率。     

互相关算法在运动目标距离选通激光三维成像中的应用

在微光成像中,距离选通成像是一种获取目标三维信息的有效手段。对于静止目标而言,可以通过对目标切片成像,获得不同选通距离的目标图像,进而通过二值化算法或质心算法获得目标的三维图像。而对于运动目标而言,在切片成像的同时,目标的空间位置会发生变化,因此需要对不同选通距离的目标图像进行配准,而后才能获得目标的三维图像。搭建了基于像增强电荷耦合器件(ICCD)的距离选通实验系统,提出了一种基于像质评价的互信息配准算法配准激光图像目标的空间位置,然后对配准后的激光图像通过互相关算法获得三维图像,并在保证一定的三维精度基础上,逐渐减少激光图像的像幅数,最后与二值化算法和质心算法三维重构进行了实验对比,实验结果表明,互信息配准算法能够有效配准激光图像,互相关三维成像算法精度高于二值化法和质心法,最少采用2幅图像即可获得目标的三维点云图像,大大降低了对运动目标三维成像的难度。     

基于同名点追踪的空间相机成像拼接配准模型

分析了已有图像配准算法在遥感图像拼接配准方面面临的问题。根据空间相机TDICCD交错拼接的成像特点,提出了一种基于同名点轨迹追踪的成像拼接配准模型。通过建立辅助空间坐标系下的中心投影共线方程,将像点、摄像中心、景物点建立严谨的数学关系,可精确实现对同名像点在像面上的轨迹追踪。结合TDICCD在像面上的位置约束,计算图像上同名像对的纵向偏差像元数和横向偏差像元数。最后结合相机在轨所成条带图像和卫星辅助数据进行分析,选取多组像点进行配准,同名像对配准误差小于1 pixel,经验证模型算法可行。相比传统的遥感图像配准算法,该方法不需要已知图像内容,为一种严格的几何意义上的配准,具有很强的适应性和预测性,已应用在型号相机的地面复算,易移植应用于其他类型空间相机的图像配准与拼接。     

基于霍夫变换和相位相关的图像配准方法

本文结合霍夫变换和相位相关技术来处理图像配准问题.根据1D相位相关技术,提出了一种通过搜索角度脊来得到旋转参数的方法;将待处理图像去旋转后,再采用2D相位相关来得到平移参数.本文方法可以充分利用FFT 的高效运算.实验结果表明此方法能准确有效地处理具有旋转和平移的图像配准问题.     

基于增强现实技术的激光全息三维图像重建研究

为提高激光全息三维图像重建后的图像信噪比,设计一种基于增强现实技术的激光全息三维图像重建方法。首先对激光全息图像进行去噪处理与图像边缘特征处理,然后建立摄像机模型,并转换坐标系,采用增强现实技术对激光全息图像特征点配准,最后采用非局域平均法进行重建,以此完成基于增强现实技术的激光全息三维图像的重建。实验结果表明,此次研究的方法提高了图像的信噪比,在51 dB左右,还降低了激光全息图像配准的误差,达到0.01%左右,光线遍历覆盖度为99.84%,覆盖区域更全面,表明此次研究的方法具有一定的有效性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.