超小型光泵远红外激光研究

在求解NH_3分子三能级系统密度矩阵的基础上,用迭代法计算了长为10cm—1.5cm的5支超小型光泵远红外激光器(OPFIRL)的输出激光能量密度和频谱特性.实验研制的5支超小型OPFIRL成功地产生了远红外激光.研究表明:纵向腔效应和横向反馈效应对超小型OPFIRL激光输出有积极作用,对最佳工作气体压强和频谱特性有重要影响.     

缓冲气体对超辐射光抽运远红外激光器的影响

以NH3作为远红外激光的工作气体 ,以N2 作为缓冲气体 ,对加入缓冲气体前后的小型超辐射光抽运远红外激光器作理论比较研究。基于缓冲气体作用机理模型 ,计算出激光工作物质的综合弛豫时间 ;通过解半经典的密度矩阵方程 ,计算出远红外激光输出的频谱特性和工作气压。计算表明 ,加入缓冲气体后 ,远红外激光的输出得到提高 ;存在一个最佳混合气体比例 ,在这一比例下远红外激光输出达到最大 ;加入缓冲气体后 ,最佳工作气压比加入缓冲气体前获得提高。     

单、双纵模腔式光泵远红外激光器的实验研究

实验上采用可选纵模的TEA－CO2激光器作泵浦源,用CO2－9R（16）线泵浦小型腔式NHG3远红外激光器,在单、双纵模泵浦条件下均获得波长为90．4μm的远红外谱线。对单、双纵模腔式光泵远红外激光的输出特性和工作气压作了实验比较研究,发现双纵模腔式光泵远红外激光可获得更强的远红外输出,具有较低的最佳工作气压值,并可在较宽的气压范围内工作。     

小型光泵远红外激光的放大过程

利用三能级系统的密度矩阵方程，通过迭代法计算了小型光泵ＮＨ３分子远红外激光器（ｍｉ－ｎｉ－ＮＨ３－ＯＰＦＩＲＬ）的介质增益Ｇｓ沿激光管的变化规律以及远红外信号光强Ｉｓ沿激光管的放大过程。计算表明激光管有激活区和饱和区，对一定管长的ｍｉｎｉ－ＮＨ３－ＯＰＦＩＲＬ，在一定范围内工作气压的提高，主要使Ｇｓ的峰值增大，同时使激活区缩短，考虑散射损耗和自吸收效应后，Ｇｓ峰值的提高对总的输出光强贡献不大。而泵浦光强Ｉｐ０的增大，有利于激光管内的介质沿光轴方向均匀激活，从而提高总的输出光强。另外，信号频偏对ｍｉｎｉ－ＮＨ３－ＯＰＦＩＲＬ的激光放大过程有较大的影响     

强驱动场近似下开放的V型系统中的无粒子数反转激光

在强驱动场近似下讨论了开放的Ｖ型三能级系统实现无粒子数反转激光的条件，分析了系统佃大小跟驱动场Ｒａｂｉ频率，自发衰减率，原子注入速率比以及原子与探测激光场相互艇后从腔中排出速率之间的关系。     

参与光泵亚毫米波激光过程的介质三能级组的选取

采用求解密度矩阵方程和增益迭加方程的原理,处理光泵亚毫米波(SMMW)的三能级近似系统时,在偏离共振的情况下,只有满足Raman辐射条件的三能级组,才能产生SMMW激光,给出一条实际谱线。CO2-9R(16)泵浦NH390．4um亚毫米波激光的计算。其方法可以推广到其他谱线的计算。     

LD抽运准三能级自倍频激光器的计算与分析

对二极管激光器端面抽运的准三能级自倍频激光系统进行了详细的理论研究。首先，利用准三能级的速率方程和缓变包络近似，从Maxwell方程出发，建立了准三能级自倍频激光器空间耦合波方程。然后结合典型二极管激光器抽运Yb：YAB激光器的相关参数，用计算机模拟了该激光系统的数值解，理论结果显示自倍频光和基频光受晶体的温度影响很大，当晶体温度升高时，激光输出迅速降低；在有效倍频长度内，分别存在不同的最佳晶体长度使自倍频光和基频光输出最大；同时也得到了自倍频光与基频光强度成二次方变化的普遍倍频规律。最后利用M^2因子对自倍频光和基频光的相对强度受抽运光光束质量的影响作了定量分析。     

V型无反转激光的非绝热线宽

应用c数量子朗之万方法在激光场的低阶近似下讨论了强相干驱动场下V型三能级系统无反转激光的非绝热线宽,证明了在强驱动场下,不管激光腔是“好腔”还是“坏腔”,系统的非绝热效应消,了系统均可作绝热近似。     

新颖激光器的物理机制

论述了电激励远红外激光器、光泵远红外激光器和自由电子激光器产生远红外受激发射的物理机制。以氰化氢激光器和甲基氟激光器为例,分析了HCN分子和CH_3F分子产生受激发射的物理过程和受激发射特性。用三能级二光场的密度矩阵方程     

缓冲气体对光抽运远红外激光器频谱特性的影响

基于分子振动弛豫理论完善了缓冲气体的作用模型，利用半经典密度矩阵理论与量子力学理论，定量分析研究了缓冲气体对小型光抽运远红外激光过程的作用机理以及缓冲气体作用下小型腔式光抽运NH3分子远红外激光器的频谱特性，讨论了工作气压、抽运功率等工作参数对频谱特性的影响，并对理论计算结果进行了实验验证．二者符合得较好。研究结果表明，在小型光抽运远红外激光器中加入适当的缓冲气体，大量工作气体分子与缓冲气体分子之间的无规碰撞会引起谱线加宽，而且可以使远红外激光输出信号增强。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.