电子镇流器控制器/半桥驱动器IR2520D

IR2520D是美国国际整流器(IR)公司最近研制的荧光灯电子镇流器控制器和半桥驱动器单片IC。该新型器件的主要特点是含有自适应零电压开关(ZVS)和波峰因数(即峰值电流与平均电流之比值)过电流保护。IR2520D的核心是一个0～5V的压控振荡器(VCO),其最低频率(即灯正常燃点时的输出频率)可由外部电阻来编程。IR2520D的半桥驱动器输出专门用作驱动MOSFET或IGBT。IR2520D仅需要用很少量的元件,即可组成高性能和高可靠的荧光灯电子镇流器。1.内部结构与引脚功能IR2520D采用8引脚PDIP和SOIC封装,在芯片上集成了电压控制振荡器、600V…     

调光电子镇流器控制器IRS2530及其应用

IRS2530是美国国际整流器（IR）公司最近推出的一种调光镇流器控制器和半桥驱动器单片IC,它主要是为驱动30W以下紧凑型荧光灯（CFL）而设计的。与IR公司前几年的产品IR2520比较,IRS2530在性能上有较大提升,并增加了闭环灯电流调光功能。     

IR2520D（S）型自适应镇流器控制电路

IR2520D(S)系列是专用于荧光照明设备的单芯片IC，在一个芯片中集成了一个完整的自适应镇流控制器和600V半桥驱动器。该电路包括自适应零电压转换(zvs)、内部波峰因数过电流保护及集成式限幅(自举)FET。该电路的核心是具有外部可编程最低频率的压控振荡器，具有全部必不可少的镇流器特性，采用8引脚塑料双列直插式(DIP型)封装或8引脚小轮廓(SOIC型)封装。     

IR推出照明镇流器设计软件IRPLBD A4最新版

国际整流器公司(InternationalRectifier,简称IR)推出其备受欢迎的镇流器设计辅助软件IRPLBDA4的4.0版本。该软件可以大幅度缩短电子镇流器的设计时间,并能够帮助设计人员生成原理图和更完整的材料清单。新版软件增加了许多新的功能,不仅支持D C输入电压应用,还具有新的时域图形功能。这个新的图形功能基于一种简化的数字分析技术,能够显示镇流器的不同输出波形,包括半桥电压、电灯电压和电流,以及谐振电感器和谐振电容器的电流。新版软件可以针对I R各种元件产品生成所需的设计,其中包括I R最近推出的IR2520D紧凑型荧光灯镇流器控…     

新型高压集成式半桥仅占85mm^2的印制板空间

IR公司又推出了一些新的产品系列,以有助于显著地减小紧凑型镇流器、AC/DC适配器和小型电器交流电动机驱动的尺寸。IR5xH、IR5xHD、IR0xH和IR0xHD系列就是将半桥结构中功率MOSFET输出级和高压集成电路控制器合装于9脚SIP管壳中的高压集成式半桥。该管壳仅占85mm~2的印制板空间,却能完成一整套高压电力变换开关和控制功能。 IR公司的这些新型集成式半桥产品对于紧凑的、低功率和高效率设计是理想的。几代老式日光灯体积笨重,镇流器就占去了大部分的空间和重量。日光灯用的新一代紧凑型镇流器由于采用了高频零电压开关电力变换器     

两种典型拓扑功率驱动电路的介绍

本文介绍了两种典型拓扑的功率驱动电路,一种为半桥功率驱动器IR2114/IR2214,另一种为单通道隔离驱动器1ED020I12FTA.     

凌特推出同步升压型DC／DC转换器LTC3422

国际整流器公司（IR）日前推出用于荧光灯的IRS2153D电子镇流器集成电路。这款新型的600V自激式半桥IC内置自举二极管，可以简化电路设计。它基于IR2153x产品系列而设计，将“555”型振荡器与一个600V半桥栅极驱动器集成成一起，以驱动两个输出场效直管或IGBT。     

IR推出全新多功能驱动IC

国际整流器公司(International Rectifier，简称IR)推出IR2304及IR2308多功能600V高侧及低侧驱动集成电路，产品整合了专为照明镇流器、电源及电机驱动内的半桥MOSFET或IGBT电路而设的保护功能。     

电子节能灯用电路IR53H(D)420

美国国际整流器公司生产的IR53H420与IR53HD420[(以下写为IR53H(D)420)]自振荡半桥厚膜电路,仅需要很少量的外部元件,即可组成电子镇流器,用作驱动双U型、3U型和螺旋型等紧凑型荧光灯。封装、内部结构和性能IR53H(D)420采用7引脚(实际上是9引脚结构,没有5引脚和8引脚)SIP封装,外形及引脚排列如图1所示。IR53H(D)420内置一个高压高速自振荡半桥(M O S栅极)驱动器芯片IR2153C、两只半桥功率M O S F E T芯片。其中,IR53HD420还内置了一只快速恢复(自举)二极管。图2为IR53H(D)420的内部结构框图。图1IR53H(D)420各引脚的功…     

基于荧光灯简易模型的电子镇流器频率特性分析

基于荧光灯的简易电路模型,分析了主要频率点与输出回路参数的关系,利用IR2520芯片进行电路设计。实验结果表明,灯管电气特性频率与电子镇流器相匹配的思路有利于延长灯管寿命。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.