啁啾光纤光栅EDFA增益平坦滤波器的设计与制作

采用啁啾相位掩膜板和程控扫描曝光技术,在经过载氢增敏处理的普通单模光纤上制作出可以用于掺铒光纤放大器(EDFA)增益谱平坦化的啁啾光纤布喇格光栅(CFBG)型增益平坦滤波器(GFF),运用数值解析的方法得到曝光量曲线,并将之分解成曝光频率、曝光功率密度、光斑尺寸和光纤移动速度的曝光函数,按照曝光函数进行程控扫描曝光从而精确控制光栅的反射率.对制作的CFBG进行退火老化处理和温度补偿及保护封装,封装后GFF的温漂系数在-20～ 70 ℃内变化小于1 pm/℃,经平坦后的EDFA增益谱在30 nm带宽范围内,不平坦度＜±0.3 dB.根据不同的EDFA的ASE谱,可程控给出不同的曝光函数,以制作具有不同反射谱的CFBG型GFF.     

增益平坦型掺铒光纤放大器研究

为了解决光信号在传输过程中因信号放大引起的各信道间功率不均衡的问题,该文通过优化掺铒光纤放大器(EDFA)的结构和增加增益平坦滤波器(GFF)对信号增益谱进行平坦优化。首先通过理论分析各信道间产生不均衡增益的原因;优化掺铒光纤放大器结构由单级放大改变为两级放大,并通过光纤长度二维仿真得到最佳长度配比;并在两级放大光路间添加增益平坦滤波器滤除一级放大产生的不平坦度,再经过二次放大输出增益光信号。最后通过实验给出加入GFF前后增益谱对比图,得到增益更加平坦的输出光谱,保证在1 530～1 560 nm波段的增益平坦度保持在±0.32范围内。     

基于波长敏感的耦合器动态增益平坦L波段EDFA理论与实验

掺铒光纤放大器(EDFA)的增益平坦化是波分复用(WDM)系统的重要问题,文章通过理论和实验提出一种新型的增益平坦滤波器,即一种耦合比随波长变化的耦合器与偏振控制器(PC)构成光纤环形镜,调节光纤环形镜内的PC的状态,从而改变光纤环形镜的反射谱线的位置和深度,使其匹配EDFA的增益谱,实现对L波段EDFA增益平坦,实验结论得出,平坦后的光谱在1562nm~1605nm带宽内增益平坦度为±0.7d B。     

TDM抽运光纤拉曼放大器增益平坦的研究

讨论了分时复用(TDM)抽运光纤拉曼放大器的增益平坦特性,基于拉曼增益谱理论,建立了光纤拉曼放大器的开关增益与光纤特性的关系表达式.通过数值模拟发现,信号增益平坦随抽运功率组合的不同有规律地起伏变化.通过优化抽运功率组合,实现了TDM抽运光纤拉曼放大器增益的平坦化.     

光子晶体增益平坦滤波器的设计

掺铒光纤放大器(EDFA)的增益平坦化是波分复用(WDM)系统中的重要问题.提出了用光子晶体实现增益平坦的新方案.通过分析EDFA增益平坦的原理与一维光子晶体的反射谱(在不同波长处具有不同反射率的特性),设计出了满足特定条件的增益平坦滤波器.以EDFA典型曲线为例,利用遗传算法简便精确地优化一维光子晶体的周期数,从而设计出了与EDFA增益谱相匹配的增益平坦滤波器.结果表明,级联的一维光子晶体滤波器在1530～1560 tim范围内对EDFA的增益进行平坦,且不平坦度约为±0.6 dB.     

基于长周期光纤光栅的增益平坦滤波器的研制

文中主要介绍了用长周期光纤光栅(L PFG) 制作增益平坦滤波器( GFF) 时要注意的一些技术性问题,其中包括光敏光纤的选择、光纤模式的选择、写光栅的曝光强度、波长漂移量的预留。     

GFF制作过程中的EF指标监测的实现

插入损耗误差函数(Error Function,EF)指标是增益平坦滤波器(Gain Flattening Filter,GFF)的关键指标,如何实时监测EF是GFF制作过程中必须解决的问题.文中介绍的EF指标实时监测系统,是通过通用接口总线(General Purpose Interface Bus,GPIB)构建的,它利用计算机编程技术从光谱分析仪中获取数据并进行分析处理,能够实时绘制带容限的GFF插入损耗曲线,监测EF指标.     

多泵浦增益平坦光子晶体拉曼光纤放大器

针对密集波分复用光纤通信系统中拉曼光纤放大器增益及增益谱平坦问题,提出一种采用4个泵浦光的多泵浦方式在光子晶体光纤不同位置处注入两种不同波长泵浦光的组合方式来获得拉曼光纤放大器增益更大、增益谱更加平坦的方法。这种组合方式在拉曼光纤放大器中使得光信号实现了前段放大、后段补偿,从而在拉曼光纤放大器输出端获得高增益和较平坦增益谱。模拟的结果表明:平均增益可达:26.5 dB,增益平坦度为0.046 dB。     

碲基掺铒光纤放大器增益均衡的数值模拟

针对宽带碲基掺铒光纤放大器(EDTFA)本征增益谱不平坦特性,研究了采用双级串连结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.模拟结果显示,通过设计一定结构的滤波谱,在37信道同时输入的情况下,铒离子掺杂浓度为4000 ppm时,使1536～1608 nm范围带宽内的增益达到了24 dB左右,噪声指数小于5.5 dB,增益谱的不平坦度小于1 dB;铒离子掺杂浓度为6000 ppm时,使1536～1608 nm范围带宽内的增益达到了23.5 dB左右.噪声指数小于5 dB,增益谱的不平坦度小于1dB.优化后的级连EDTFA可以满足WDM系统的要求.     

双向泵浦受激拉曼散射增益谱平坦光纤放大器

研究现有的拉曼光纤放大器(Raman Fiber Amplifier,RFA)增益谱平坦化技术的不足,提出一种新型的拉曼光纤放大器的设计,即双向泵浦受激拉曼散射增益谱平坦光纤放大器。利用受激拉曼散射增益谱几乎在450cm-1波数处形成的对称结构,利用前向泵浦与信号光产生的频移对信号光进行放大作用,同时利用后向泵浦与信号光产生的频移对信号光进行补偿性的放大作用,从而实现双向泵浦受激拉曼散射增益谱平坦光纤放大器的设计。通过MATLAB的仿真验证,所设计的放大器增益平坦度高,信号光功率增益大,可实现双向泵浦受激拉曼散射光纤放大器的平坦化。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.