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1.
单晶金刚石机械研磨与化学机械抛光工艺   总被引:1,自引:0,他引:1  
单晶金刚石在工业、国防等领域的应用日益广泛,对其加工表面质量的要求不断提高,使用常温低压的化学机械抛光可实现金刚石的超光滑低损伤表面加工.通过理论分析及实验研究得出,使用硅酸盐玻璃材质研磨盘进行研磨加工,可以将金刚石表面粗糙度Ra降至15~25 nm,且无明显机械划痕;在2 MPa压力及室温环境下进行单晶金刚石化学机械抛光实验,优选出Fenton试剂酸性水基抛光液,使用该抛光液抛光单晶金刚石可获得粗糙度Ra值4 nm以下的光滑表面.  相似文献   

2.
磨削加工是目前陶瓷材料的主要加工方法,通过对LaPO/Al2O3可加工陶瓷的磨削试验研究,进一步分析了陶瓷材料的磨削去除机理、磨削加工损伤以及加工损伤导致的材料力学性能的变化.结果表明,LaPO4/Al2O3可加工陶瓷磨削去除方式主要有两种,脆性去除和塑性变形去除.磨削加工对材料表面及亚表面的加工损伤较为明显,加工损伤...  相似文献   

3.
运用分子动力学方法研究了单晶锗材料在多次切削过程中晶体结构的演化和相变.比较了在相同的总加工深度下采用两次不同预设切削深度加工单晶锗后表面/亚表面损伤程度、温度和应力的变化.研究结果表明:切削过程中切削区原子发生高压相变,原子结构从Ge-Ⅰ结构转变为无定形结构,使工件发生塑性变形,切屑以塑性方式去除;切削结束后由于压力和温度释放,少量无定形结构原子重新转变为Ge-Ⅰ结构或六方金刚石结构,而无定形结构主要是β-tin结构和非晶体结构;预设切削深度增加,材料的去除量和亚表面损伤深度增加,其损伤深度不受前一次切削深度影响,仅与最终预设切削深度相关,并且在同样条件下,多次切削比单次切削更有利于降低亚表面损伤深度和提升加工效率.此外,原子相变与σxx和σHyd相关,亚表面损伤深度与σyy相关,两次预设切削深度接近或相等时,工件内部应力均衡有利于形成较好的加工表面.  相似文献   

4.
单晶金刚石因具有最高的硬度和最低的摩擦系数常被用来制备超精密刀具,而表面粗糙度是影响刀具寿命的重要指标.提出采用机械研磨结合化学辅助机械抛光的组合工艺抛光单晶金刚石.实验优化并确定的加工工艺如下:先用5μm和2μm金刚石粉研磨单晶金刚石表面,然后采用化学机械的方法去除机械研磨带来的损伤.用该工艺抛光单晶金刚石,表面粗糙度Ra可达0.8 nm(测量区域70μm×53μm).表面拉曼光谱分析表明化学机械抛光的表面只有1 332 cm-1拉曼峰.  相似文献   

5.
基于分子动力学单晶锗的纳米压痕特性分析   总被引:1,自引:0,他引:1  
单晶锗属于硬脆性光学半导体材料,加工时易产生裂纹和凹坑等缺陷,严重影响其表面质量.为了达到纳米级的表面质量,本文采用分子动力学模拟从不同晶面和晶向对单晶锗进行纳米压痕分析,在纳米尺度下对其进行压痕加载和卸载,分析该过程中载荷的变化情况,得到弹性模量的变化差异.结果表明,加载前后弹性模量差异小的单晶锗(111)晶面可以作为实际生产中的加工面,从而获得高质量的加工表面.  相似文献   

6.
为分析单晶氮化镓的微观变形机理,使用纳米压痕仪对单晶氮化镓进行压痕与划痕实验.结果表明单晶氮化镓压痕过程存在弹塑转变过程即"pop-in"现象,分析得出此现象是由材料的位错萌生和扩展导致,压痕周围产生凸起现象导致计算硬度和弹性模量偏大,通过模型修正得到更真实的硬度和弹性模量数据.单晶氮化镓的变载划痕过程发生弹塑转变和脆塑转变,弹塑变形阶段深度-位移曲线波动平稳,表面光滑;而脆性阶段曲线波动幅度较大,表面产生侧向裂纹且朝着划痕方向45°对称分布.得到弹塑转变的临界载荷为389 mN,脆塑转变临界载荷为1227 mN,因此单晶氮化镓塑性加工区域应在389~1227 mN之间,该区域内易加工出光滑表面.通过不同载荷划痕实验,发现划痕压头所受的切削力和摩擦系数随划痕载荷的增大而增大,因此氮化镓加工时应选择合理的加工载荷.  相似文献   

7.
镍基单晶高温合金的再结晶   总被引:1,自引:0,他引:1  
孟杰  金涛 《材料工程》2011,(6):92-98
镍基单晶高温合金作为先进发动机叶片的主要用材,其再结晶问题日益受到重视.本文综述了热处理温度、热处理时间、变形程度及合金成分等多种因素对镍基单晶高温合金再结晶的影响规律,分析了镍基单晶高温合金再结晶对其蠕变和疲劳性能的影响,并讨论了回复处理及浸蚀直接去除表面变形层、渗碳和表面涂层等控制再结晶的方法.最后,指出了镍基单晶...  相似文献   

8.
表面微/纳米结构和各种功能特性密切相关,为了更加定量地分析结构参数和功能特性的内在相互依赖关系,需要首先获得具有指定统计粗糙度参数(例如表面均方根粗糙度、偏斜度、峰度、自相关长度等)的三维粗糙表面.本文主要进行可控表面统计参数的粗糙结构的设计、加工和复制研究.为了提高设计精度,特别是对于具有大自相关长度的表面,在非线性共轭梯度法中引入了遗传算法(GA).经优化设计后,利用聚焦离子束(FIB)在硅基底上加工了一系列具有不同高度分布和自相关长度的三维粗糙表面.最后,用转印的方法将这些结构复制到聚二甲基硅氧烷(PDMS)薄膜,并且应用参数评价和频谱分析等对模板和复制结构之间的原子力显微镜(AFM)测量结果评价比较.可控表面统计参数的粗糙表面加工及复制可为后续进行粗糙结构相关的表面功能特性定量分析研究提供支持.  相似文献   

9.
采用Cube压头对单晶锗进行变载与恒载纳米划刻实验, 利用扫描电子显微镜和原子力显微镜对已加工表面进行观测, 根据表面形貌将划刻过程分为延性域、脆塑转变域及脆性域三种, 对各个阶段的表面成型及材料去除方式进行了研究。使用最小二乘法对不同阶段划刻力进行非线性拟合, 并利用相关系数检验拟合函数可靠性, 结果表明划刻力与划刻深度存在强相关性。同时分析了单晶锗的弹性回复率随划刻距离的变化趋势, 结果表明工件的弹性回复率将从纯弹性阶段的1逐步回落至0.76左右。基于脆塑转变临界载荷, 以裂纹萌生位置作为脆塑转变标志, 首次结合工件已加工表面弹性回复, 提出一种适用于计算单晶锗的脆塑转变临界深度模型, 其脆塑转变临界深度为489 nm。  相似文献   

10.
镍基单晶高温合金的凝固组织对其最终的高温力学性能有着重要的影响,由于制造工艺条件限制,单晶高温合金的制备和加工中总会出现杂晶,保持单晶结构的完整性对提高单晶合金的冶金质量和降低维护成本具有重要意义.综述了镍基单晶高温合金在铸造、焊接、表面熔凝工艺条件下的凝固组织特征的研究现状,分析了工艺条件、工艺参数等对凝固组织和性能的影响,并展望了杂晶缺陷的控制、实现单晶叶片连接区的单晶化.  相似文献   

11.
以不同能量的碳离子注入方法得到的单晶硅片作为研究对象,利用原位纳米力学测试系统对其纳米硬度和弹性模量进行测定,在UMT-2型摩擦试验机上进行摩擦试验,利用S-3000N型扫描电镜表征其磨损后的磨痕形貌.结果表明,碳离子注入后硅片的纳米硬度和弹性模量发生变化,注入后硅片的的减摩效果和耐磨性能在0.1~0.3N载荷下得到了大幅度提高.注入前单晶硅片的磨损机制在0.1N载荷下以粘着磨损为主,在0.6N载荷下以疲劳剥落为主;注入后单晶硅片的磨损机制以粘着磨损为主.  相似文献   

12.
对晶向为(100)的p型单晶硅片进行表面刻蚀,制作减反射绒面。选用了一种新型的腐蚀剂,即醋酸钠(CH3COONa)溶液,用来腐蚀单晶硅太阳电池。通过分别改变醋酸钠溶液的浓度、温度以及腐蚀时间对硅片表面进行腐蚀发现,经醋酸钠溶液腐蚀后在硅片表面形成腐蚀坑大小适中、分布均匀的绒面结构。在醋酸钠溶液的质量分数为20%、温度为95℃、时间为40min的条件下腐蚀单晶硅片,在波长为700~1000nm之间获得较低的平均表面反射率,且最佳平均反射率为12.14%。从实验结果和成本因素考虑,这种腐蚀剂的成本很低,不易污染环境且重复性好,有利于大规模工业化制绒。  相似文献   

13.
Large-area single crystal monolayer graphene is synthesized on Ni(111) thin films, which have flat terraces and no grain boundaries. The flat single-crystal Ni films are heteroepitaxially grown on MgO(111) substrates using a buffer layer technique. Low-energy electron diffraction and various spectroscopic methods reveal the long-range single crystallinity and uniform monolayer thickness of the graphene. When transferred onto an insulating wafer, continuous millimeter-scale single domain graphene is obtained.  相似文献   

14.
The effect of the surface quality of multi-film cooling holes processed by laser drilling (LD) and electrical discharge machining (EDM) on the mechanical properties of blades have been studied. The physical features of the cooling holes, including the diameter, conicity and shape of the holes, are measured by optical microscopy, demonstrating that the EDM process is not as accurate as the LD process. Meanwhile, metallurgical characteristics, including the recast layer, heat affected zone and micro-cracking within the surface layer, are analysed by scanning electron microscopy, demonstrating that the radial crack generated in the LD process is more dangerous than the circumferential cracks generated in the EDM process. Using finite element analysis (FEA), the single crystal superalloy specimens with multi-film holes are simulated based on the crystal plasticity theory, showing that a significant increase of the stress gradient is observed in a real hole model than in an ideal circular hole model, which means that a shape simplification in the blade design will reduce the reliability of the blade. Based on the findings above, the influence of the surface quality of holes is investigated to obtain the possible damages to nickel single crystal turbine blades.  相似文献   

15.
铀薄膜有助于原子参数的测试研究,目前对铀薄膜研究的报道较少.利用超高真空磁控溅射法在单晶Si片上制备了铀薄膜.通过扫描电子显微镜(SEM)对铀薄膜的表面形貌进行了观察,利用X射线光电子能谱仪(XPS)及X射线衍射仪(XRD)对铀薄膜的表面结构及元素状态进行了分析和表征.结果表明:铀薄膜呈片状式生长,比较致密、连续,表面由铀及氧化铀组成,之下为纯铀.  相似文献   

16.
This paper demonstrates the evaluation and selection of commercially available LiNbO(3) and LiTaO(3) single crystals and wafers for surface acoustic wave (SAW) devices using the line-focus-beam ultrasonic material characterization (LFB-UMC) system. This system enables measuring leaky-SAW (LSAW) propagation characteristics precisely and efficiently for a number of specimens. The wafers are prepared from the top, middle, and bottom parts of four 128 degrees YX LiNbO(3) and seven X-112 degrees Y LiTaO(3) single crystals. For both series of crystals, the measured LSAW velocities increase from top to bottom in the crystals and with the increasing crystal growth number. The velocity changes for all wafers are 0.036% for 128 degrees YX LiNbO(3) and 0.035% for X-112 degrees Y LiTaO(3), corresponding to changes of 0.038 mol% and 0.075 mol% in Li(2)O concentration, respectively. Moreover, the inhomogeneity in the first X-112 degrees Y LiTaO(3) single crystal caused by some undesirable wafer fabrication processes can be detected precisely, although it is difficult for the conventional methods to obtain such information.  相似文献   

17.
Epitaxial layers of silicon are grown on single crystal Si- substrate from a solution of silicon in indium using conventional graphite slider boat technique. The important problems of natural convection due to lower density of silicon compared to indium,poor wetting of substrate due to high angle of contact of indium solution on silicon substrate resulting in poor nucleation, melt removal from the growth substrate and saturation wafer associated with LPE in this technique are practically eliminated using sandwich method with simple modifications of the boat and the method of growth. Some experimental studies on the effect of different surface preparations of growth substrate are also reported. Growth results are shown and discussed. Further, improvization of slider boat to facilitate better study of growth parameters is suggested in the line of modification already carried out.  相似文献   

18.
The UV-induced damages to the gate oxide in a commercially available high-density-plasma dielectric oxide deposition system for the ultra-large integrated circuit fabrication process were analyzed systematically using the metal-oxide-semiconductor capacitors with different antenna ratio. UV-induced damages exclusively in the gate oxide were evaluated by depositing 2500 Å thick oxide layer only once and twice on the two wafers separately and comparing the two results: the deposition of the oxide layer of only 2500 Å did not cause any degradation in the SPDM wafer while the double deposition revealed antenna-ratio dependent shift of the breakdown voltage. The deviation of the values of breakdown voltage of the damaged wafer from its normal ones was found mainly at the center of the wafer where the intensity of the UV light is generally higher in the inductively coupled plasma source.  相似文献   

19.
SI-GaAs晶片的PL mapping表征技术   总被引:1,自引:0,他引:1  
研究了扫描光致发光光谱(PLmapping)在表征半绝缘砷化镓(SI-GaAs)材料中的应用,实验结果表明SI-GaAs晶片的强度及mapping均匀性对器件性能有着十分密切的关系,所以在为制备器件筛选优质的SI-GaAs材料时,除了电阻率、迁移率、位错密度,碳含量,EL2浓度及其均匀性,晶片表面质量上,PLmapping也是表征材料质量的一个重要参数。  相似文献   

20.
Modern aerospace structures make increasing use of fibre reinforced plastic composites, due to their high specific mechanical properties. However, due to their brittleness, low velocity impact can cause delaminations beneath the surface, while the surface may appear to be undamaged upon visual inspection. Such damage is called barely visible impact damage (BVID). Such internal damages lead to significant reduction in local strengths and ultimately could lead to catastrophic failures. It is therefore important to detect and monitor damages in high loaded composite components to receive an early warning for a well timed maintenance of the aircraft. Non-linear ultrasonic spectroscopy methods are promising damage detection and material characterization tools. In this paper, two different non-linear elastic wave spectroscopy (NEWS) methods are presented: single mode nonlinear resonance ultrasound (NRUS) and nonlinear wave modulation technique (NWMS). The NEWS methods were applied to detect delamination damage due to low velocity impact (<12 J) on various composite plates. The results showed that the proposed methodology appear to be highly sensitive to the presence of damage with very promising future NDT and structural health monitoring applications.  相似文献   

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