基于开关信号理论的电流型CMOS多值施密特电路设计

以开关信号理论为指导,建立了描述电流型CMOS多值施密特电路中阈值控制电路的电流传输开关运算.在此基础上,提出了新的电流型CMOS三值和四值施密特触发器设计.所设计的电路可提供多值电流和电压输出信号,回差电流的大小只需通过改变MOS管的尺寸比来调节.所提出的电路较之以往设计具有结构简单,回差值调整容易以及可在较低电压下工作等特点.采用TSMC 0.25 μ m CMOS工艺参数和1.5V电压的HSPICE模拟结果验证了所提出设计方案的有效性和电路所具有的理想回差特性.     

一种CMOS电荷泵电路的设计

本文采用SMIC 0.18m CMOS工艺分析设计了一种CMOS电荷泵电路,电路采用PMOS与NMOS构成的互补CMOS开关,有效地减小了电流失配、电荷泄漏、开关效应等电荷泵的非理想效应。仿真结果现实,在1.8V电源电压条件下,输出电压线性度良好,电荷泵电路的静态功耗仅为1.44m W;电荷泵上拉和下拉电流变化较小,电流失配率约为1.3%。     

对称三值电流型CMOS电路设计

本文应用开关信号理论,建立了采用对称三值逻辑的传输电流开关理论,该理论能指导从开关级设计对称三值电流型CMOS电路.应用该理论设计的对称三值电流型CMOS电路不仅具有简单的电路结构和正确的逻辑功能,而且能处理具有双向特性的信号.     

一种新型低电压极限电流检测电路

为磁滞电流控制的DC-DC开关稳压器设计了一种新型的极限电流检测器。该电路不借助于专门的电流检测电路,只使用一个检测MOSFET和一个电压比较器来实现极限电流检测,减小了电路的复杂度。针对电流检测器的要求,设计了一种低电源电压、高共模电压的比较器。使用TSMC 0.18μm CMOS混合信号工艺,对电路进行设计。结果表明,电路具有很好的容差特性,并且电路可工作在1.2 V的低电源电压下。     

一种MEMS开关驱动电路的设计

静电驱动MEMS开关可靠工作需要较高的驱动电压,大多数射频前端系统很难直接提供,因此需要一种实现电压转换和控制的专用芯片,以满足MEMS开关的实用化需要。本文基于200V SOI CMOS工艺设计的高升压倍数MEMS开关驱动电路,采用低击穿电压的Cockcroft-Walton电荷泵结构,结合特有的Trench工艺使电路的性能大大提高。仿真结果显示驱动电路在5V电源电压、0.2pF电容和1GΩ电阻并联负载下,输出电压达到82.7V,满足大多数MEMS开关对高驱动电压的需要。     

低延迟低电压电流比较器

设计了一种基于改进共源共栅电流镜的CMOS电流比较器,该比较器在1 V电压且电压误差±10%的状态下都正常工作,同时改进后的结构能够在低电压下取得较低的比较延迟。电路的输入级将输入的电流信号转化为电压信号,电平移位级的引入使该结构能够正常工作在不同的工艺角和温度下,然后通过放大器和反相器得到轨对轨输出电压。基于SMIC 0.18μm CMOS工艺进行了版图设计,并使用SPECTRE软件在不同工艺角、温度和电源电压下对电路进行了仿真。结果表明,该电路在TT工艺角下的比较精度为100 nA,平均功耗为85.53μW,延迟为2.55 ns,适合应用于高精度、低功耗电流型集成电路中。     

宽带CMOS可变增益放大器的设计

采用TSMC0.18μm RF CMOS工艺设计实现了一种对数增益线性控制型的宽带可变增益放大器,电路采用两级结构,前级采用电压并联负反馈的Cascode结构以实现良好的输入匹配和噪声性能;后级采用信号相加式电路实现增益连续可调,同时本文设计了一种新型指数控制电压转换电路,解决了射频CMOS电路中,由于漏源电流与栅源电压通常不为指数关系而造成放大器对数增益与控制电压不成线性关系的难题,实现了可变增益放大器的对数增益随控制电压呈线性变化,芯片测试结果表明,电路在1.8V电源电压下,电流为9mA,3dB带宽为430-2330MHz,增益调节范围为-3.3-9.5dB,最大增益下噪声系数为6.2dB,最小增益下输入1dB压缩点为-9dBm。     

宽带CMOS可变增益放大器的设计

采用TSMC 0.18μm RF CMOS工艺设计实现了一种对数增益线性控制型的宽带可变增益放大器.电路采用两级结构,前级采用电压并联负反馈的Cascode结构以实现良好的输入匹配和噪声性能;后级采用信号相加式电路实现增益连续可调.同时本文设计了一种新型指数控制电压转换电路,解决了射频CMOS电路中,由于漏源电流与栅源电压通常不为指数关系而造成放大器对数增益与控制电压不成线性关系的难题,实现了可变增益放大器的对数增益随控制电压呈线性变化.芯片测试结果表明,电路在1.8V电源电压下,电流为9mA,3dB带宽为430～2330MHz.增益调节范围为-3.3～9.5dB,最大增益下噪声系数为6.2dB,最小增益下输入1dB压缩点为-9dBm.     

低电压低功耗ECL电路设计

首先指出了 ECL电路随着集成度和速度的提高 ,存在着功耗太大的问题 ,进而提出了采用低电压电源以降低功耗 ,为此发展了将串联开关转换成并联开关的技术 ,保证了电路能在低电压下正常工作 ,并由此实现了适合于低电压工作的 ECL电路的开关级设计。从对设计的电路进行的计算机模拟结果表明 ,采用文中提出的并联开关技术设计的电路 ,在电源电压为 -2 .5 V时 ,不仅具有正确的逻辑功能和较高的工作速度 ,且比采用-5 .0 V电源的电路节约了 80 %以上的功耗     

高阶曲率补偿低温漂系数带隙基准电压源设计

设计了一种高阶曲率补偿低温漂系数的CMOS带隙基准电压源,采用自偏置共源共栅结构,降低了电路工作的电源电压。采用电流抽取电路结构,在高温阶段抽取与温度正相关电流,低温阶段抽取与温度负相关的电流,使得电压基准源在整个工作温度范围内有多个极值点,达到降低温漂系数的目的。在0.5μm CMOS工艺模型下,Cadence Spectre电路仿真的结果表明,在–40~+145℃范围内,温度特性得到了较大的改善,带隙基准电压源的温漂系数为7.28×10~(–7)/℃。当电源电压为2.4 V时电路就能正常工作。     

A GHz MOS adaptive pipeline technique using MOS current-mode logic

This paper describes an adaptive pipeline (APL) technique, which is a new pipeline scheme capable of compensating for device-parameter deviations and for operating-environment variations. This technique can also compensate for clock skew and eliminate excessive power dissipation in current-mode logic (CML) circuits. The APL technique is here applied to a 0.4-μm MOS 1.6-V 1-GHz 64-bit double-stage pipeline adder, and this paper shows that the adder can operate accurately on condition that the clock has 20% skew. The APL technique uses MOS current-mode logic (MCML) circuits, whose propagation delay time can be varied by the control ports. MCML circuits can operate with lower signal voltage swing and higher operating frequency at lower supply voltage than CMOS circuits can. This paper also shows that MCML circuits are suitable for a low-noise variable delay circuit. Measurement results show that jitter of MCML circuits is about 65% that of CMOS circuits     

Low power dual-port CMOS SRAM macro design

A novel low power dual-port CMOS SRAM structure is described. The inherent low power advantage is obtained by using current-mode rather than voltage-mode signal transmission. The design of this new dual-port memory cell and current-mode sense amplifier is based on 0.5 μm, 5 V CMOS logic process technology. HSPICE simulations show that the circuits can operate at high speed even if the supply voltage is reduced to 2 V. The dual-port memory cell is most suitable for the design of FIFO buffers     

Circuit Design of a High Speed and Low Power CMOS Continuous-time Current Comparator

Current comparator is a fundamental component of current-mode analog integrated circuits. A novel high-performance continuous-time CMOS current comparator is proposed in this paper, which comprises one CMOS complementary amplifier, two resistive-load amplifiers and two CMOS inverters. A MOS resistor is used as the CMOS complementary amplifier's negative feedback. Because the voltage swings of the CMOS complementary amplifier are reduced by low input and output resistances, the delay time of the current comparator is shortened. Its power consumption can be reduced rapidly with the increase of input current. Simulation results based on 1.2 m CMOS process model show the speed of the novel current comparator is comparable with those of the existing fastest CMOS current comparators, and its power consumption is the lowest, so it has the smallest power-delay product. Furthermore, the new current comparator occupies small area and is process-robust, so it is very suitable to high-speed and low-power applications.     

一种新型高速电流比较器的研究与设计

针对传统电流比较器速度慢、精度低等问题,提出了一种新型CMOS电流比较器电路。采用CMOS工艺HSPICE模型参数,对该电流比较器的性能进行了仿真,结果表明当电源电压为3．3V,输入方波电流幅度为0．3μA时,电流比较器的延时为5．2ns,而其最小分辨率达0．1nA。该比较器结构简单、速度快、精度高,适合应用于高速高精度电流型集成电路。     

Design and analysis of low power high-speed 1-bit full adder cells for VLSI applications

This paper presents a low power and high speed two hybrid 1-bit full adder cells employing both pass transistor and transmission gate logics. These designs aim to minimise power dissipation and reduce transistor count while at the same time reducing the propagation delay. The proposed full adder circuits utilise 16 and 14 transistors to achieve a compact circuit design. For 1.2 V supply voltage at 0.18-μm CMOS technology, the power consumption is 4.266 μW was found to be extremely low with lower propagation delay 214.65 ps and power-delay product (PDP) of 0.9156 fJ by the deliberate use of CMOS inverters and strong transmission gates. The results of the simulation illustrate the superiority of the newly designed 1-bit adder circuits against the reported conservative adder structures in terms of power, delay, power delay product (PDP) and a transistor count. The implementation of 8-bit ripple carry adder in view of proposed full adders are finally verified and was observed to be working efficiently with only 1.411 ns delay. The performance of the proposed circuits was examined using Mentor Graphics Schematic Composer at 1.2 V single ended supply voltage and the model parameters of a TSMC 0.18-μm CMOS.     

平板显示器驱动芯片高低电压转换电路

LCD、PDP、VFD等各类平板显示器已越来越受到人们关注与喜爱,但大多数平板显示器需要专用的功率驱动芯片来驱动其发光显示,各类专用功率驱动芯片又离不开高低电压转换电路,高低电压转换电路性能的好坏直接影响到驱动芯片的稳定性和功耗等。通过比较平板显示器驱动芯片的几种典型高低压转换电路,设计出一种带有电流源的CMOS型高低压转换电路,它具有最佳的性能指标,该电路不但可以为平板显示器驱动芯片使用,还可以作为其他各类驱动芯片的高低压转换模块使用,最后给出一种具体的平板显示驱动芯片高压CMOS器件结构。     

A Novel Ultra Low Power High Performance Atto-Ampere CMOS Current Mirror with Enhanced Bandwidth

A novel CMOS atto-ampere current mirror （AACM） is proposed which reaches the minimum yet reported current range of 0.4 aA. Operation of this circuit is based on the source voltage modulation instead of the conventionally used gate voltage modulation which interestingly prevents usage of commonly required voltage shifting in those circuits. The proposed circuit has a simple structure prohibiting large chip area consumption which consumes extremely low power of 1.5 μW. It is thus the best choice for ultra low power low voltage （ULPLV） applications. By using a very simple frequency compensation technique, its bandwidth is widened to 15.8 kHz. Simulation results in SMIC （Semiconductor Manufacturing International Corporation） 0.18 μm CMOS technology with Hspice are presented to demonstrate the validation of the proposed current mirror.     

Low Power and High Speed Multi Threshold Voltage Interface Circuits

Employing multiple supply voltages (multi- V_DD) is an effective technique for reducing the power consumption without sacrificing speed in an integrated circuit (IC). In order to transfer signals among the circuits operating at different voltage levels specialized voltage interface circuits are required. Two novel multi-threshold voltage (multi-V_th) level converters are proposed in this paper. The new multi-V_th level converters are compared with the previously published circuits for operation at different supply voltages. When the circuits are individually optimized for minimum power consumption, the proposed level converters offer significant power savings of up to 70% as compared to the previously published circuits. Alternatively, when the circuits are individually optimized for minimum propagation delay, the speed is enhanced by up to 78% with the proposed voltage interface circuits in a 0.18- mum TSMC CMOS technology.     

Equivalent circuit models in current-mode circuits for time delay calculations

In this paper time delay calculations for current-mode circuits are considered and equivalent circuit models for delay estimation are developed. Three different equivalent circuit structures for the Core Circuit used in the multipurpose IC DU-TCC1209 are examined separately; however the relation obtained for the time delay can be applied to any CMOS current-mode circuit. The proposed calculation methods are verified with SPICE using 0.35 μm TSMC MOSIS technology parameters and with bench-test measurements using DU-TCC1209.