应用于大功率LED器件的回路热管散热研究

为解决大功率LED的散热问题,提出一种应用于大功率LED散热的微型回路热管,研究了充液率和倾斜角度对热管冷却大功率LED的启动性能、结温和热阻等特性的影响.研究结果表明:热管的最佳充液率为60％,系统的总热阻为7.5 K/W,此时对应的热管的热阻为1.6 K/W;热管的启动时间约为6.5 min,LED的结点温度被控制在42℃以下,很好地满足了大功率LED的结温稳定性要求.     

一种回路热管对大功率LED散热的研究

针对大功率LED散热能力较其它照明灯具差这一问题,研制了一种应用在多芯片大功率LED散热上的回路热管装置,并研究了热负荷、倾角等对热管的起动性、均温性和热阻等的影响。试验结果表明,所设计的热管散热器的热阻在0.48～1.47K/W之间;在蒸发器倾斜角为0°和30°时,蒸发器的均温性分别被控制在1.5℃和4.3℃以内。因此,将这种结构的热管应用在大功率LED散热系统中时,首先应该对蒸发器倾斜角度对系统散热性能的影响进行测试评估。     

大功率LED排式热管散热器的开发及性能研究

开发了一种应用于大功率LED散热的排式热管散热器。在大空间自然对流冷却环境中,分别在0°、30°、60°、90°放置条件下对其启动性能、均温特性、散热性能进行了试验研究。试验结果表明:散热器启动性能良好,启动时间约为67min;在输入功率为30～70W的范围内,热源表面中心点温度不超过75℃;各倾角下散热器均具有较低的总热阻及扩散热阻,0°放置时总热阻最小。基于试验所得结果,通过计算LED结温论证了排式热管散热器在各倾角条件下均可满足热输出70W以下大功率LED散热的需求。     

充液量对回路热管性能的影响

实验研究了以Cu粉烧结块为吸液芯、Al制太阳花散热器为冷凝器的回路热管(LHP)在不同充液率条件下充入工质为无水乙醇后的启动、温度波动以及热阻等传热性能。Cu粉烧结块吸液芯相对丝网吸收层可以产生更大的毛细力,Al制太阳花散热器可以使整个LHP更轻便,利于不同安装场合的应用。研究结果表明:1)LHP的启动受热负荷大小和充液率共同作用;2)温度波动随功率的增加而变得平缓,而随着充液率的增加,温度波动频率却有所上升;3)充液率影响LHP的热阻变化,最佳充液率为60%。     

并行多通道大功率LED回路热管散热器

为解决大功率LED散热问题,构造了一种一体化并 行多通道大功率LED回路热管散热器。利用水作为工质,在不同加热功率、不同倾斜角以及 不同充液比条件下对该新结构热管散热器的热性 能进行了研究。结果表明,这种新结构热管散热器不仅能使散热器上下底板处于均温状态, 而且当芯片加 热功率达到200W时,芯片加热面中心最高温度不超过71.8℃;倾斜角度对热管换热性能影响不大;在一 定加热功率范围内,新结构热管散热器的热阻随加热功率的增大而减小,当芯片加热功率达 到240W时, 热阻最小,最小可达0.19K/W。构造的一体化并行多通道大功率LED 回路热管散热器具有很好的传热性能,并提高了承载高热流密度的能力。     

适用于大功率光电芯片散热的一体化平板热管

为解决大功率光电芯片散热问题,构造了一种新结构一体化平板热管。利用超轻多孔泡沫金属作为毛细吸液芯,以水、丙酮和乙醇为工质,在不同充液比、加热功率和倾角条件下对新结构热管的热性能进行了研究,结果表明,这种新结构平板热管不仅消除了热管与散热片间的接触热阻,而且使整个散热翅片也处于均温状态,当功率达到380W、热流密度超过445 W/cm2时,热管仍具有较好的均温特性,且热阻较小,可达0.04℃/W。在3种工质中,水是最佳工质选择,且当充液比为30%时具有较好的效果。实验表明,以泡沫金属为吸液芯的新结构一体化平板热管具有很好的传热性能,并扩展了承载大热流密度的能力。     

大功率发光二极管的热管理及其散热设计

对大功率发光二极管的散热路径及其相应的热阻进行了分析和计算。利用商业计算流体力学软件对大功率发光二极管进行热流分析及散热优化设计。理论计算结果表明,PN结到环境之间的总热阻为28.67℃/W;当LED耗散功率为1 W、环境温度为25℃时,结温为53.67℃。模拟结果显示,在同样工作条件下,大功率发光二极管的结温为54.85℃,与理论计算结果相吻合。当散热面积达到一定值时,散热效果基本不变。因此,从降低产品成本出发,散热器的面积有一限值范围。当散热器的鳍片垂直向左时,空气流体流向上无阻碍,其散热效果最好,结温最低。     

用于大功率LED冷却的热管散热器的实验研究

提出了一种将大功率发光二极管(LED)散热和热管传热相结合的用于大功率LED冷却的热管散热器新概念,并对设计出的热管散热器的传热性能和整体的均温性进行了试验研究.试验结果表明,热管散热器的热阻在0.21～2.6 K/W,且整个散热器具有均匀的温度分布.与当前的LED散热器相比,这种结构的热管散热器具有散热效率高、结构紧凑、热阻小、重量轻、成本低等特点,可以满足未来大功率LED散热的要求.     

大功率倒装单片集成LED芯片的自隔离散热技术

提出采用 自隔离散热技术解决大功率倒装单片集成LED芯片散热与绝缘之间的矛盾问题.基于自隔离散热技术原理,利用微纳加工技术,通过在AlN陶瓷基板上生长隔离金属岛制备自隔离散热基板.采用多胞串并联网络结构设计大功率倒装单片集成LED芯片,芯片尺寸为1.5 mmx4.5 mm.在200 mA的驱动电流下,大功率倒装单片集成LED芯片的正向电压为8.3 V,反向漏电流小于100 nA.当输入电流为2 A时,大功率倒装单片集成LED芯片的输入功率为20W,其最大光输出功率为8.3 W,插墙效率为42.08％,峰值热阻约为1.23 K/W,平均热阻约为1.17 K/W.     

两种热电分离式MCPCB导热性能的对比研究

利用SMT工艺将两种功率不同的LED分别与设计完全相同的热电分离式铜基板及铝基板组装成模组,然后借助结温测试系统及积分球系统对两种金属基板的散热性能进行了对比研究。结果表明,热电分离式铜基板较之热电分离式铝基板仅具备微弱的散热优势,这种优势随着LED的功率增加有所扩大。当LED功率为9 W时,铜基板及铝基板所对应的LED模组热阻分别是3.16℃/W、3.26℃/W;当LED功率为15 W时,铜基板及铝基板所对应的LED模组热阻分别是2.33℃/W、2.46℃/W。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.