底栅微晶硅薄膜晶体管

对底栅微晶硅TFT的微晶硅材料生长孵化层问题进行了详细讨论,发现低硅烷浓度是减薄该层厚度的有效途径.同时又发现,以SiNx为栅绝缘层的底栅TFT,对随后生长的硅基薄膜有促进晶化的作用(约20%).沉积底栅TFT的微晶硅有源层时,必须计入该影响.因此为了获得良好的I-V特性,选用的硅烷浓度不宜低于3%.由硅基薄膜晶化体积比与系列沉积工艺条件关系和TFT所得薄膜晶化体积比的对比,可清晰证实SiNx对晶化的促进作用.     

底栅微晶硅薄膜晶体管

对底栅微晶硅TFT的微晶硅材料生长孵化层问题进行了详细讨论,发现低硅烷浓度是减薄该层厚度的有效途径.同时又发现,以SiNx为栅绝缘层的底栅TFT,对随后生长的硅基薄膜有促进晶化的作用(约20%).沉积底栅TFT的微晶硅有源层时,必须计入该影响.因此为了获得良好的I-V特性,选用的硅烷浓度不宜低于3%.由硅基薄膜晶化体积比与系列沉积工艺条件关系和TFT所得薄膜晶化体积比的对比,可清晰证实SiNx对晶化的促进作用.     

微晶硅太阳电池

采用VHF-PECVD技术制备了系列微晶硅太阳电池.综合测试结果表明:硅烷浓度、热阱温度和前电极都对微晶硅太阳电池的性能有影响.在湿法腐蚀的ZnO衬底上制备的电池的效率比在ZnO/SnO2复合膜上制备的电池的效率高1.5%.在优化了沉积条件后,制备出效率达6.7%的微晶硅太阳电池(Jsc=18.8mA/cm2,Voc=0.526V,FF=0.68),电池的结构是glass/ZnO/p(μc-Si:H)/i(μc-Si:H)/(a-Si:H)/Al,没有ZnO背反射电极.     

微晶硅太阳电池

采用VHF-PECVD技术制备了系列微晶硅太阳电池．综合测试结果表明：硅烷浓度、热阱温度和前电极都对微晶硅太阳电池的性能有影响．在湿法腐蚀的ZnO衬底上制备的电池的效率比在ZnO/SnO2复合膜上制备的电池的效率高1.5%．在优化了沉积条件后,制备出效率达6.7%的微晶硅太阳电池（Jsc=18.8mA/cm2,Voc=0.526V,FF=0.68）,电池的结构是glass/ZnO/p(μc-Si∶H)/i(μc-Si∶H)/(a-Si∶H)/Al,没有ZnO背反射电极．     

微晶硅薄膜太阳电池中孵化层研究

对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究.喇曼测试结果显示:微晶硅薄膜太阳电池在p/i界面存在着一定的非晶孵化层.孵化层的厚度随硅烷浓度的增加或辉光功率的降低而增大.可以通过适当的硅烷浓度或适当的辉光功率来降低孵化层的厚度.     

微晶硅薄膜太阳电池中孵化层研究

对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究.喇曼测试结果显示:微晶硅薄膜太阳电池在p/i界面存在着一定的非晶孵化层.孵化层的厚度随硅烷浓度的增加或辉光功率的降低而增大.可以通过适当的硅烷浓度或适当的辉光功率来降低孵化层的厚度.     

PET塑料衬底非晶/微晶硅叠层太阳电池研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在125℃的低温条件下,沉积了一系列不同厚度的本征微晶硅(μc-Si)薄膜。对材料的光电特性和结构特性的测试结果表明,低温条件下制备的μc-Si薄膜具有较厚的非晶孵化层,并且纵向结构演变较为明显。采用梯度H稀释技术,在沉积过程中不断降低H稀释度,改善了μc-Si薄膜的纵向均匀性。将此技术应用于非晶硅(a-Si)/μc-Si叠层电池的μc-Si底电池,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备出初始效率达到6.0%的a-Si/μc-Si叠层电池。     

VHF-PECVD法制备P型微晶硅锗的研究

以SiH4和GeF4为反应气体,采用甚高频等离子体增强化学气相沉积(VHF-PECVD)方法制备了P型微晶硅锗(P-μc-Si1-xGex)薄膜.研究GeF4浓度对P型微晶硅锗材料组分、结构及电学特性的影响.随GeF4浓度的增加,薄膜中的锗含量增加,暗电导和晶化率先增加,后减小;在薄膜厚度为72 nm,GeF4浓度为4%时,得到了电导率达1.68 S/cm,激活能为0.047 eV,晶化率为60%,在长波区域的平均透过率超过0.9的P型微晶硅锗.     

单室沉积本征微晶硅薄膜及其在电池中的应用

为获得单室沉积高效微晶硅(μc-Si)太阳电池,首先采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同沉积条件下的本征μc-Si薄膜.通过对材料的结构和电学输运特性的研究,借鉴分室沉积的器件质量级μc-Si材料的经验,选取合适的本征层和P种子层处理B污染的技术,在单室中制备出光电转换效率为6.23%(1 cm2)的单结μc-Si电池.     

掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用

在掺杂P室采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜.对薄膜电学特性和结构特性的测试结果分析表明:随硅烷浓度的增加,材料的光敏性先略微降低后提高,而晶化率的变化趋势与之相反;X射线衍射(XRD)测试表明材料具有(220)择优晶向.在P腔室中用VHF-PECVD方法制备单结微晶硅太阳能电池的i层和p层,其光电转换效率为4.7%,非晶硅/微晶硅叠层电池(底电池的p层和i层在P室沉积)的效率达8.5%.     

微晶硅材料及其薄膜晶体管的研究

本文在微晶硅材料性能研究的基础上制备了微晶硅薄膜晶体管(TFT).发现微晶硅的柱状生长模式会导致其结构和电学性能的不均匀性.由于材料的柱状生长模式使得其晶化百分比、晶粒尺寸和暗电导受到薄膜厚度的调制.平行于衬底和垂直于衬底方向的电导率随着材料沉积条件的变化呈现出不同的变化规律,后者始终保持在 10-6 s/an～10-5 s/cm 量级.确定了用于 TFT 有源层的微晶硅薄膜沉积条件中的硅烷浓度应高于 2%,晶化百分比应为40%～50%左右.制备的微晶硅 TFT 器件具有良好的稳定性,开态电流的衰退和阈值电压的漂移分别为 25%和1 Ⅴ,进而还发现了一种新颖的自恢复现象.     

Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells

Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layerson the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance ofμc-Si:H single-junction and a-Si:H/μc-Si:H tandemsolar ceils has been significantly improved.     

Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition

Microcrystalline silicon (μc-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a μc-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of μc-Si thin film solar cells of thin films is the quality of the μc-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of μc-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of μc-Si thin films. In addition, the growth rate of μc-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing μc-Si thin films from SiH₄/H₂ with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these μc-Si thin films were studied by Raman scattering and X-ray diffraction techniques.     

用于TFT有源层的Ar~+激光结晶a-Si:H的性质(英文)

This paper demonstrates the technological approach to the high performance a-Si:H thin film transistor (TFT) fabricated by the Ar+ laser-crystallization technique on the fused quartz substrates. The a-Si:H films for the active layer of TFT were prepared in a capacitively coupled glow-discharge deposition system. The films were crystallized by CW Ar+ laser scanning at low speeds (3-5 cm/s). The laser power ranges from 2.5W to 5.0W. The TEM cross-section micrograph illustrates that a liquid phase laser crystallization region (LP-LCR) has defect-free of structure with a grain size of the order of handreds of micron. In the Raman spectrum of LP-LCR, 475 cm-1 peak of a-Si:H disappears and 520 cm-1 peak of c-Si becomes stronger and sharper. The value of conductivity in the layer of LP-LCR is five orders of magnitude larger than the one in asepositedd a-Si:H film. We also discussed some problems to be overcome in application of a-Si : H TFTs in LCD.     

PECVD制备SiOx-SiNx薄膜的研究

首先使用工业型Direct-PECVD设备,采用SiH4和N2O制备了SiOx薄膜.针对Si太阳电池的应用,比较了SiOx薄膜在不同射频功率、气压、气体流量比和温度下的沉积特性,得出了最佳的沉积条件,这些沉积特性包括沉积速率、折射率和腐蚀速率.在该条件下沉积的SiOx膜均匀性良好、结构致密、沉积速率稳定,其性能满足了现阶段Si太阳电池对减反钝化层的光学和电学性能方面的要求.然后制备了SiOx-SiNx叠层减反钝化膜,并比较了SiO2与SiNx单层膜的减反和钝化效果,结果显示SiOx-SiNx叠层膜在不增加反射率的同时显著提高了Si片的钝化效果.     

引入微晶硅底电池的PIN型三结Si基薄膜太阳电池的制备

为充分利用太阳光谱能量,在玻璃衬底的PIN型a-Si/a-SiGe电池中直接引入了微晶硅(μc-Si:H)底电池.从透明导电氧化物(TCO)衬底的光透过率估算了PIN型a-Si:H/a-SiGe:H/μc-Si:H三结电池实现高转化效率的可行性.通过调整μc-Si:H底电池厚度考察三结电池的性能变化,结果发现,受中间电...     

P-μc-Si1-xGex:H thin film by VHF-PECVD

In this paper,a series of boron doped microcrystalline hydrogenated silicon-germanium(p-μc-Si1-xGex:H)was deposited by very high frequency plasma-enhanced chemical vapor deposition(VHF-PECVD)from SiH4 and GeF4 mixtures.The effect of GeF4concentration on films'composition.structure and electrical properties was studied.The resuIts show tllat with the increase of GeF4 concentration,the Ge fraction x increases.The dark conductivity and crystalline volume fraction increase first,and then decrease.When the GC is 4%,p-μc-Si1-xGex:H matefiai with high conductivity,low activation energy(σ=1.68 S/cm,Eg=0.047 eV),high crystalline volume fraction (60%)and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 am was achieved.The experimental results were discussed in detail.     

A simple analytical model of thin films crystalline silicon solar cell with quasi-monocrystalline porous silicon at the backside

An analytical model that simulates the performance of an elementary thin silicon solar cell with a thin film quasi-monocrystalline porous silicon (QMPS) at the backside reflector is developed. A complete set of equations for the photocurrent generated under the effect of the reflected light is solved analytically in each region. The collection of the light absorbed by the QMPS layer has been discussed and the analytical solution of the light-generated current in this layer is derived. The maximum of the photocurrent density calculated in the present study is in accordance with the numerical values established by Bergmann et al. Furthermore, the influence that the layer's number of double porosities and high porosity have on the photovoltaic parameters is studied. It is demonstrated that the photovoltaic parameters increase with the number of double porosities that the layer might have in a given structure. When the QMPS layer is formed by three double-porosity layers 20%/80% and for a 5-μm-thick film c-Si, the backside reflector gives a total improvement of about 6 mA/cm² for the photocurrent density and 3.2% for the cell efficiency.     

VHF-PFLWD法制备μc-SiGe薄膜的研究

分别以Si2 H6和GeH4及SiH4和GeH4两种组合气体为源气体,用甚高频等离子增强化学气相沉积(VHF-PECVD)制备μc-SiGe薄膜.用Raman散射光谱和原子力显微镜(AFM)对薄膜的结构进行研究.结果表明:与SiH4和GeH4制备的薄膜系列相比,Si2H6和GeH4制备的薄膜中Ge的融入速率相对较慢;用...     

PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响

研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.