一种全集成CMOS数字电视调谐器射频前端

设计了一种全集成CMOS数字电视调谐器(DTV tuner)射频前端电路.该电路采用二次变频低中频结构,集成了低噪声放大器、上变频混频器、下变频混频器等模块.芯片采用0.18μm CMOS工艺实现,测试结果表明,在50～860MHz频率范围内,射频前端能够实现很好的输入阻抗匹配,并且总的增益变化范围达到20dB.其中,在最大增益模式下,电压增益为+33dB,单边带噪声系数(SSB NF)为9.6dB,输入参考三阶交调点(ⅡP3)为-11Bm;在最小增益模式下,电压增益为+14dB,单边带噪声系数为28dB,输入参考三阶交调点为+8dBm.射频前端电路面积为1.04mm×0.98mm,工作电压为1.8V,消耗电流为30mA.     

一种全集成CMOS数字电视调谐器射频前端

设计了一种全集成CMOS数字电视调谐器(DTV tuner)射频前端电路.该电路采用二次变频低中频结构,集成了低噪声放大器、上变频混频器、下变频混频器等模块.芯片采用0.18μm CMOS工艺实现,测试结果表明,在50～860MHz频率范围内,射频前端能够实现很好的输入阻抗匹配,并且总的增益变化范围达到20dB.其中,在最大增益模式下,电压增益为 33dB,单边带噪声系数(SSB NF)为9.6dB,输入参考三阶交调点(ⅡP3)为-11Bm;在最小增益模式下,电压增益为 14dB,单边带噪声系数为28dB,输入参考三阶交调点为 8dBm.射频前端电路面积为1.04mm×0.98mm,工作电压为1.8V,消耗电流为30mA.     

用于IEEE802．11b／g WLAN直接下变频接收机的射频前端设计

介绍了一种应用于IEEE802．11b／g无线局域网接收机射频前端的设计。基于直接下变频的系统架构。接收机集成了低噪声放大器、I／Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。电路采用TSMC0．18μm CMOS工艺设计,工作在2．4GHz ISM（工业、科学和医疗）频段,实现的低噪声放大器噪声系数为0．84dB,增益为16dB,S11低于-15dB,功耗为13mW;I／Q下变频器电压增益为2dB,输入1dB压缩点为-1 dBm,噪声系数为13dB,功耗低于10mw。整个接收机射频前端仿真得到的噪声系数为3．5dB,IIP3为-8dBm,IP2大于30dBm,电压增益为31dB,功耗为32mW。     

433MHz ASK接收机射频前端电路设计

设计了一款应用在433MHz ASK接收机中的射频前端电路。在考虑了封装以及ESD保护电路的寄生效应的同时,从噪声、匹配、增益和线性度等方面详细讨论了低噪声放大器和下混频器的电路设计。采用0.18μm CMOS工艺,在1.8V的电源电压下射频前端电路消耗电流10.09 mA。主要的测试结果如下:低噪声放大器的噪声系数、增益、输入P1dB压缩点分别为1.35 dB、17.43 dB、-8.90dBm;下混频器的噪声系数、电压增益、输入P1dB压缩点分别为7.57dB、10.35dB、-4.83dBm。     

用于便携式GPS接收机中的5.4mW低噪声高增益CMOS射频前端电路设计

设计了应用于便携式GPS接收机射频前端中的CMOS低噪声放大器和正交混频器. 该电路中的低噪声放大器采用带源端电感负反馈的输入级,并引入功耗约束下的噪声和输入同时匹配技术. 正交混频器基于吉尔伯特单元. 电路采用TSMC 0.18μm RF CMOS工艺实现,总的电压转换增益为35dB,级联噪声系数为2.4dB,输入1dB压缩点为-22dBm,输入匹配良好,输入回损为-22.3dB, 在1.8V电压供电下,整个全差分电路功耗为5.4mW.     

一种用于电视调谐器的宽带CMOS低噪声放大器设计

介绍了一种宽带CMOS低噪声放大器设计方法,采用噪声抵消技术消除输入MOS管的噪声贡献.芯片采用TSMC 0.25μm 1P5M RF CMOS工艺实现.测试结果表明:在50～860MHz工作频率内,电压增益约为13.4dB;噪声系数在2.4～3.5dB之间;增益1dB压缩点为-6.7dBm;输入参考三阶交调点为3.3dBm.在2.5V直流电压下测得的功耗约为30mW.     

用于便携式GPS接收机中的5.4mW低噪声高增益CMOS射频前端电路设计

设计了应用于便携式GPS接收机射频前端中的CMOS低噪声放大器和正交混频器.该电路中的低噪声放大器采用带源端电感负反馈的输入级,并引入功耗约束下的噪声和输入同时匹配技术.正交混频器基于吉尔伯特单元.电路采用TSMC 0.18μm RFCMOS工艺实现,总的电压转换增益为35dB,级联噪声系数为2.4dB,输入ldB压缩点为-22dBm,输入匹配良好,输入回损为-22.3dB,在1.8V电压供电下,整个全差分电路功耗为5.4mW.     

应用于802.11b无线局域网的低噪声高线性度的CMOS射频接收机

实现了一个单片集成、直接转换结构的2.4GHz CMOS接收机. 这个正交接收机作为低成本方案应用于802.11b无线局域网系统,所处理的数据传输率为该系统的最大速率--11Mbps. 基于系统设计以及低噪声高线性度考虑,设计了低噪声放大器、直接转换混频器、增益可变放大器、低通滤波器、直流失调抵消电路及其他辅助电路. 该芯片采用中芯国际0.18μm 1p6m RF CMOS工艺流片,所测的接收机性能如下：噪声系数为4.1dB,高增益设置下低噪声放大器与混频器的输入三阶交调点为-7.5dBm,整个接收机的输入三阶交调点为-14dBm,相邻信道干扰抑制能力在距中心频率30MHz处达到53dBc,输出直流失调电压小于5mV. 该接收机采用1.8V电源电压,I, Q两路消耗的总电流为44mA.     

5.6GHz CMOS低噪声放大器设计

分析了一种射频COMS共源-共栅低噪声放大器的设计电路,采用TSMC 90nm低功耗工艺实现。仿真结果表明:在5.6GHz工作频率,电压增益约为18.5dB;噪声系数为1.78dB;增益1dB压缩点为-21.72dBm;输入参考三阶交调点为-11.75dBm。在1.2V直流电压下测得的功耗约为25mW。     

B3G射频接收机前端设计

分析了DC-OFDM零中频接收方案,采用两个相邻子载波以分路/合路的方式进行信号处理以降 低硬件难度和复杂度。利用ADS软件设计了B3G射频接收机,其低噪声放大器的最低噪声系数 为1.7 dB,三阶交调点为-1 dBm;下变频器在频带范围内其增益为12.5 dB, 1 dB压缩点-12 dBm,三阶交调点-3 dBm。实验 测试结果表明,所设计的前端满足接收机的指标要求,适合于宽带通信系统。     

A low voltage CMOS RF front-end for IEEE 802.11b WLAN transceiver

A low voltage CMOS RF front-end for IEEE 802.11b WLAN transceiver is presented. The problems to implement the low voltage design and the on-chip input/output impedance matching are considered, and some improved circuits are presented to overcome the problems. Especially, a single-end input, differential output double balanced mixer with an on-chip bias loop is analyzed in detail to show its advantages over other mixers. The transceiver RF front-end has been implemented in 0.18 um CMOS process, the measured results show that the Rx front-end achieves 5.23 dB noise figure, 12.7 dB power gain (50 ohm load), −18 dBm input 1 dB compression point (ICP) and −7 dBm IIP3, and the Tx front-end could output +2.1 dBm power into 50 ohm load with 23.8 dB power gain. The transceiver RF front-end draws 13.6 mA current from a supply voltage of 1.8 V in receive mode and 27.6 mA current in transmit mode. The transceiver RF front-end could satisfy the performance requirements of IEEE802.11b WLAN standard. Supported by the National Natural Science Foundation of China, No. 90407006 and No. 60475018.     

Low-power transceiver analog front-end circuits for bidirectional high data rate wireless telemetry in medical endoscopy applications

State-of-the-art endoscopy systems require electronics allowing for real-time, bidirectional data transfer. Proposed are 2.4-GHz low-power transceiver analog front-end circuits for bidirectional high data rate wireless telemetry in medical endoscopy applications. The prototype integrates a low-IF receiver analog front-end [low noise amplifier (LNA), double balanced down-converter, bandpass-filtered automatic gain controlled (AGC) loop and amplitude-shift keying (ASK) demodulator], and a direct up-conversion transmitter analog front-end [20-MHz IF phase-locked loop (PLL) with well-defined amplitude control circuit, ASK modulator, up-converter, and power amplifier] on a single chip together with an internal radio frequency oscillator and local oscillating (LO) buffers. Design tradeoffs have been made over the boundaries of the different building blocks to optimize the overall system performance. All building blocks feature circuit topologies that enable comfortable operation at low power consumption. The circuits have been implemented in a 0.25-microm CMOS process. The measured sensitivity of the receiver analog front-end is -70 dBm with a data rate of 256 kbps, and the measured output power of the transmitter analog front-end could achieve -23 dBm with a data rate of 1 Mbps. The integrated circuit consumes a current of 6 mA in receiver mode and 5.6 mA in transmitter mode with a power supply of 2.5 V. This paper shows the feasibility of achieving the analog performance required by the wireless endoscopy capsule system in 0.25 microm CMOS.     

A 2.4-GHz Low-Power Low-IF Receiver and Direct-Conversion Transmitter in 0.18-μm CMOS for IEEE 802.15.4 WPAN Applications

In this paper, a low-power low-IF receiver and a direct-conversion transmitter (DCT) suitable for the IEEE standard 802.15.4 radio system at the 2.4-GHz band are presented in 0.18-mum deep n-well CMOS technology. By using vertical NPN (V-NPN) bipolar junction transistors in the baseband analog circuits of the low-IF receiver, the image rejection performance is improved and the power consumption is reduced. In addition, by applying the V-NPN current mirrored technique in a DCT, the carrier leakage is reduced and the linearity performance is improved. The receiver has 10 dB of noise figure, -15 dBm of third-order input intercept point, and 35 dBc of image rejection. The transmitter has more than -2 dBm of transmit output power, -35 dBc of local oscillator leakage, and -46 dBc of the transmit third harmonic component. The receiver and transmitter dissipate 6 and 9 mA from a 1.8-V supply, respectively     

A highly linear receiver front-end employing modified derivative superposition method with tuned inductors for 5.25 GHz

We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply.     

Ultra-low-power 2.4 GHz image-rejection low-noise amplifier

An ultra-low-power image-rejection low-noise amplifier (IR-LNA) for 2.4 GHz ZigBee applications based on 0.18 /spl mu/m CMOS technology is presented. By using the third-order active notch filter the proposed IR-LNA can achieve high image-rejection ratio. Measurements show 12 dB gain, 1.8 dB noise figure, 38 dB image-rejection, -3 dBm input third-order intercept point, -18 and -19 dB input and output return loss while dissipating 0.6 mA from a supply voltage of 1.5 V.     

Doubly balanced dual-gate CMOS mixer

The operation, biasing, and measured results of a CMOS doubly balanced dual-gate downconversion mixer are presented. Measurements show, with a radio-frequency input of 1.9 GHz and an intermediate-frequency output of 250 MHz, that the mixer has a conversion gain of 0 dB, an input-referred third-order intercept point of +2 dBm, and a single-sideband noise figure of 13.6 dB while requiring +5 dBm of local-oscillator power and consuming 10.2 mA from a 3 V power supply     

Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application

A new optimization method of a source inductive degenerated low noise amplifier(LNA) with electrostatic discharge protection is proposed.It can achieve power-constrained simultaneous noise and input matching. An analysis of the input impedance and the noise parameters is also given.Based on the developed method,a 2.4 GHz LNA for wireless sensor network application is designed and optimized using 0.18-μm RF CMOS technology. The measured results show that the LNA achieves a noise figure of 1.59 dB,a power gain of 14.12 dB, an input 1 dB compression point of-8 dBm and an input third-order intercept point of 1 dBm.The DC current is 4 mA under a supply of 1.8 V.     

A 2.4-GHz CMOS transceiver for Bluetooth

A fully integrated CMOS transceiver tuned to 2.4 GHz consumes 46 mA in receive mode and 47 mA in transmit mode from a 2.7-V supply. It includes all the receive and transmit building blocks, such as frequency synthesizer, voltage-controlled oscillator (VCO), power amplifier, and demodulator. The receiver uses a low-IF architecture for higher level of integration and lower power consumption. It achieves a sensitivity of -82 dBm at 0.1% BER, and a third-order input intercept point (IIP3) of -7 dBm. The direct-conversion transmitter delivers a GFSK modulated spectrum at a nominal output power of 4 dBm. The on-chip voltage controlled oscillator has a close-in phase-noise of -120 dBc/Hz at 3-MHz offset     

超高频射频识别阅读器的高线性低噪声前端

根据超高频段射频识别的协议要求、结合论文所提出的正交直接变频无线收发机架构,对阅读器接收路径所需的系统噪声系数、输入线性度要求做出分析。给出了同时具有低噪声系数、高线性度特点的三级紧凑式射频前端,该电路能够承受标签背散射机制所引起的大信号带内自阻塞干扰。电路采用IBM 0.18μm CMOS 7RF工艺制作,当从3.3V的电源电压上抽取6.9mA电流时,该射频前端可以获得13dBm的输入线性度与23 dB的最大噪声系数。     

Image-rejection receiver using on-chip active notch filters for 2.4-GHz band wireless communication applications

This paper presents the design and experimental results of image-rejection (IR) receiver front-end for 2.4-GHz band applications. The proposed IR-receiver front-end integrates a third-order active notch filter into each of conventional cascode low noise amplifier and down-conversion mixer to achieve high image-rejection ratio (IRR). The image signal is suppressed and the wanted signal is maximized due to series and parallel resonator effects of the notch filter, respectively. Consequently, the proposed IR-receiver front-end implemented in a standard 0.18 μm CMOS technology has the power gain of 21.5 dB, the noise figure of 3.5 dB, the input third order intermodulation product of ?15 dBm and the IRR of 56 dB. The IR-receiver front-end dissipates a total of 5.5 mA from supply voltage of 1.8 V.