网电空间作战的打击目标分类和打击重心分析

目前网电空间作战打击目标分类和打击重心分析缺乏统一有效的方法.提出了一种与网电空间作战的体系对抗特征相契合的并行目标分类方法,按照目标的系统要素和特征要素分别进行目标分类描述,在此基础上定性阐述了网电空间作战的打击重心分析原则并给出了应用举例.     

海战场网电空间作战系统研究

进入21世纪以来，以信息技术为核心的科技革命，推动了网电空间系统的迅猛发展，并被认为是与陆海空天并列的第五维空间。本文研究了海战场上网电空间作战系统具有的特性，对能够推动海上网电空间作战系统快速发展的对策进行了探讨。     

战场电子设备之间作用关系的描述及其判定

采用科学合理的研究方法理清战场电子设备之间的作用关系,是对复杂电磁环境进行模拟构建和复杂性分析的最基本、最关键的环节。首先给出了战场电子设备之间作用关系分类的描述方法,然后提出了从作战时机、工作频段、作战空间、信号能量、信号极化方式和信号样式等六个方面考虑的判定因子,最后给出了每种作用关系的判定方法。研究成果对复杂电磁环境问题研究具有实用价值。     

网电空间心理战装备发展研究

网电空间心理战是网电空间信息战和心理战相结合的新型作战样式,为了完成其作战使命,不仅需要作战专业队伍,还需要特定的心理战装备提供相应的作战能力。文中首先介绍了网电空间心理战概念,分析了其特点以及与电子战、网络战的区别和联系。其次,研究了网电空间心理战对抗模式和武器装备体系。最后给出了当前应优先发展的关键装备建议,这些装备能够利用互联网和移动通信网等新型媒介影响敌对方认知、情感和意志,在心理战中发挥重大作用。     

美国网电空间作战现状与发展

网电空间已成为继陆、海、空、天之后又一新的作战领域.为在网电空间占领技术和战略高地,世界各国越来越重视网电空间领域的发展与建设,采取各种手段加强对网电空间的控制.从美国网电空间安全战略、网电空间作战指挥机构和网电空间作战武器装备三个方面阐述了美国网电空间作战现状与发展,对我国网电空间作战的发展具有一定的借鉴意义和启示.     

台军网电一体战实力情况初探

在未来对台作战中，为了取得战场的制信息权，网电一体战将发挥重要作用。在研究了台军网电一体战的作战思想和发展方向的基础上，对台军的网电一体战实力情况进行了研究，给出了其在网电一体战方面的优势与不足。分析结果对于我军网电一体战装备的建设将会有所帮助。     

面向作战需求的战场电磁环境复杂度评估

战场电磁环境是战场中的一个重要因素,其复杂度对作战指挥人员的作战决策和作战运用具有重要的参考意义。本文以战场电磁环境复杂度在作战指挥中的应用为研究背景,在分析作战指挥对战场电磁环境复杂度的作战需求的基础上,研究建立了适合不同作战指挥层次应用的分层分类的战场电磁环境复杂度的评估方法,并给出了电磁环境复杂度评估指标和相应的表征方法。     

战场电磁空间安全体系基本要素探析

战场电磁空间安全体系主要由战场电磁空间威胁感知要素、战场电磁空间安全指挥要素、战场电磁空间安全作战要素和战场电磁空间安全保障要素构成。界定了各要素的内涵、提出了各要素的组成方式,探讨了各要素的基本职能、地位作用和相互关系。     

战场通信信号电磁环境仿真研究

电磁空间的信息争夺是交战双方争夺信息优势的主战场,战场电磁环境的可视化是一个亟待解决的问题。文中从信号样式、信号分布特征、信号强度和信号密度四个方面对战场通信信号电磁环境的特征做了论述,运用随机函数仿真了战场通信网台的工作情况和活动规律,生成网台工作瀑布图,并从频谱占用度的角度对战场通信信号电磁环境进行了分析研究。     

通信电子战面临的挑战

从通信技术的发展、战场环境的变化、战场生存条件的改变以及对抗技术发展的瓶颈等4个方面,针对与通信电子战密切相关的抗干扰、网络化、新技术及新体制等,针对电磁环境、作战空间、作战样式及对抗思路等的变化,介绍了其发展变化,并分析了其对通信电子战带来的多方面挑战,基于各种挑战分析提出了通信电子战的发展措施。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.