A 5‐Gbps low‐power low‐jitter voltage‐mode transmitter with two‐tap pre‐emphasis and impedance calibration in 65‐nm CMOS

A low‐power low‐jitter voltage‐mode (VM) transmitter with two‐tap pre‐emphasis and impedance calibration for high‐speed serial links is presented. Based on a comprehensive analysis of the relationship between impedance, supply current, and pre‐emphasis of the output driver, an impedance control circuit (ICU) is presented to maintain the 50 Ω output impedance and suppress the reflection, a self‐biased regulator is proposed to regulate the power supply, and an edge driver is introduced to speed up the signal transition time. Therefore, the signal integrity (SI) of the transmitter is improved with low power consumption. The whole transmitter is implemented in 65‐nm CMOS technology. It provides an eye height greater than 688 mV at the far end with a root‐mean‐squared jitter of less than 6.99 ps at 5 Gbps. The transmitter consumes 15.2 mA and occupies only 370 μm × 230 μm. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

IO circuit design for 2.5D through‐silicon‐interposer interconnects

This paper presents four topologies of voltage‐mode un‐terminated IO cells in 28‐nm CMOS for single‐ended rail‐to‐rail signaling over a passive interposer die in 2.5D configuration for >1Gbps data rates. The presented design explores the existing IO design‐space from a 2.5D viewpoint, optimizing existing topologies from area, speed, power and protection perspectives, with a higher degree of configurability in the form of pre‐emphasis and slew‐rate control. The transmitter (TX) embeds pre‐emphasis to enhance high‐frequency components of the signal for longer low‐pass natured channels. The TX also implements slew‐rate control to minimize reflections on shorter channels because of impedance discontinuities and also to minimize simultaneous switching noise. Level‐shifting capability embedded in the receiver (RX) enables multi‐technology interfacing where different dies are signaling at their core voltages (range: 0.7 V–1.8 V) instead of following a particular signaling standard. The measurement results of the transceivers, over a interposer of length of 3.5 mm, demonstrate ±5% duty‐cycle distortion with 700 μW at 500 MHz/0.8‐V‐signaling on the channel with jitter of 20 ps, ±10% duty‐cycle distortion with 1.8 mW at 1Gbps/0.9‐V signaling with jitter of 20 ps, ±10% duty‐cycle distortion with 2 mW at 2Gbps/0.7‐V signaling for 1‐V receiver core voltage with a jitter of 10 ps. Copyright © 2016 John Wiley & Sons, Ltd.     

Active‐terminated transmitter and receiver circuits for high‐speed low‐swing duobinary signaling

In this work, we propose transmitter and receiver circuits for high‐speed, low‐swing duobinary signaling over active‐terminated chip‐to‐chip interconnect. In active‐termination scheme port impedance of transmitter and receiver is matched with characteristic impedance of the interconnect. Elimination of the passive terminators helps in reducing the transmitted signal level without degrading the 0signal detectability of the receiver. High‐speed current‐mode receiver and transmitter circuits are designed, so that the input port impedance of the receiver and the output port impedance of the transmitter are matched with characteristic impedance of the link. These Tx–Rx pair is used to validate the proposed active‐termination scheme. We also propose a duobinary precoder architecture suitable for high‐speed operation and a low‐power broadband equalizer topology for compensating the lossy long interconnect. The duobinary transmitter and receiver circuits are implemented in 1.8 V, 0.18 µm Digital CMOS technology. The designed high‐speed duobinary Tx/Rx circuits work up to 8 Gb/s speed while transmitting the data over 29.5 in. FR4 PCB trace for a targeted bit error rate (BER) of 10^?15. The power consumed in the transmitter and receiver circuits is 42.9 mW at 8 Gb/s. Copyright © 2010 John Wiley & Sons, Ltd.     

A 5‐Gbps USB3.0 transmitter and receiver linear equalizer

A USB3.0 compatible transmitter and the linear equalizer of the corresponding receiver are presented in this paper. The architecture and circuit design techniques used to meet the strict requirements of the overall link design are explored. Output voltage amplitude and de‐emphasis levels are programmable, whereas the output impedance is calibrated to 50Ω. A programmable receiver equalizer is also presented with its main purpose being to compensate for the channel losses; this is employed together with a DC offset compensation scheme. The 6.25‐GHz equalizer provides a 10 dB overall gain equalization and 5.5‐dB peaking at the maximum gain setting. Designed using a mature and well established 65 nm complementary metal oxide semiconductor process, the layout area is 400 µm × 210 µm for the transmitter core, and 140 µm × 70 µm for the equalizer core. The power consumption is 55 and 4 mW, respectively, from a 1.2 V supply at a data rate of 5 Gbps. The target application for such high‐speed blocks is to implement the critical part of the physical layer that defines the signaling technology of SuperSpeed USB3 PHY. However, identical iterations of the circuitry discussed can be used for similar high‐speed applications like the PCI express (PCIe). Copyright © 2014 John Wiley & Sons, Ltd.     

A power‐efficient 600‐mVpp voltage‐mode driver with independently matched pull‐up and pull‐down impedances

In this study, a large‐swing, low‐power voltage‐mode driver with independently matched pull‐up and pull‐down impedances is proposed. To achieve large swing and constant impedances during a transition, a P‐over‐N structure is implemented with regulators calibrating the impedances. Two regulators are dedicated to matching the pull‐up and pull‐down impedances by regulating the supply voltages of the driver and predriver, respectively. Because background impedance calibration loops are adopted to track the process, voltage, and temperature (PVT) variations, the proposed driver can operate properly without additional calibration time. To reduce the power consumption of the calibration loops, scaled replicas of the actual driver are used. Moreover, an analysis of design optimization for the proposed driver is presented. The proposed driver was fabricated in 65‐nm CMOS technology and verified at a 5‐Gb/s data rate. Measurement results show that the proposed driver has a voltage swing of 600 mV_pp and a horizontal eye opening of 0.5 UI. The prototype chip consumes 6 mW at a 1.0‐V supply. Copyright © 2014 John Wiley & Sons, Ltd.     

Crosstalk cancelling voltage‐mode driver for multi‐Gbps parallel DRAM interface

For multi‐Gb/s/pin parallel dynamic random access memory (DRAM) interface, a crosstalk cancelling voltage‐mode driver is proposed. The voltage‐mode driver is composed of a main driver and sub‐drivers where the cancellation signal is generated by the sub‐drivers. The outputs of the main driver and sub‐drivers are combined by a capacitive coupling so the direct current (DC) output swing is not affected by the crosstalk cancellation and the sub‐drivers may not consume DC power. The proposed crosstalk cancelling voltage‐mode driver implemented in a 0.11‐µm complementary metal‐oxide semiconductor (CMOS) technology improves the horizontal eye openings by 22.6 ps at 4‐Gbps/pin. Copyright © 2014 John Wiley & Sons, Ltd.     

Study and implementation of a 15‐W driver for piezoelectric actuators

This paper studies and implements a 15‐W driver for piezoelectric actuators. The discussed driver is mainly composed of a flyback converter and a power operational amplifier (P‐OPA). The flyback converter produces a variable DC voltage to supply the P‐OPA, which outputs an amplified sinusoidal signal with a DC bias of 100 V to drive the piezoelectric actuator. The power losses can be reduced because the supply voltage of the P‐OPA varies with the peak of the input signal. The power conversion efficiency of the driver can thus be promoted up to more than 30%. From the experimental results, the implemented prototype possesses some advantageous features, such as a nearly constant output‐to‐input voltage gain, a high slew rate, a high input impedance, a low output impedance, and low output voltage ripples. Copyright © 2016 John Wiley & Sons, Ltd.     

A subthreshold current‐sensing ΣΔ modulator for low‐voltage and low‐power sensor interfaces

A continuous‐time (CT) ΣΔ modulator for sensing and direct analog‐to‐digital conversion of nA‐range (subthreshold) currents is presented in this work. The presented modulator uses a subthreshold technique based on subthreshold source‐coupled logic cells to efficiently convert subthreshold current to digital code without performing current‐to‐voltage conversion. As a benefit of this technique, the current‐sensing CT ΣΔ modulator operates at low voltage and consumes very low power, which makes it convenient for low‐power and low‐voltage current‐mode sensor interfaces. The prototype design is implemented in a 0.18 µm standard complementary metal‐oxide semiconductor technology. The modulator operates with a supply voltage of 0.8 V and consumes 5.43 μW of power at the maximum bandwidth of 20 kHz. The obtainable current‐sensing resolution ranges from effective number of bits (ENOB) = 7.1 bits at a 5 kHz bandwidth to ENOB = 6.5 bits at a 20 kHz bandwidth (ENOB). The obtained power efficiency (peak FoM = 1.5 pJ/conv) outperforms existing current‐mode analog‐to‐digital converter designs and is comparable with the voltage‐mode CT ΣΔ modulators. The modulator generates very low levels of switching noise thanks to CT operation and subthreshold current‐mode circuits that draw a constant subthreshold current from the voltage supply. The presented modulator is used as a readout interface for sensors with current‐mode output in ultra low‐power conditions and is also suitable to perform on‐chip current measurements in power management circuits. Copyright © 2014 John Wiley & Sons, Ltd.     

An 11‐μ W, 9‐bit fully differential,cyclic/algorithmic ADC in 0.13 μm CMOS

This paper describes a fully differential, cyclic, analogue‐to‐digital converter (ADC). It utilizes a 4‐bit binary weighted capacitor array to obtain 9‐bit resolution. The ADC uses an operational amplifier to suppress supply voltage variations. The operational amplifier with the slew‐rate detection is used to increase the speed of the ADC. The ADC is fabricated in IBM 0.13 μm CMOS process and occupies 650 × 850μm² active area. At 10 kS/s sampling rate, the ADC consumes 11 μW. In order to test immunity of the ADC on the supply voltage variations, static and dynamic performance of the ADC is measured with triangular supply voltage (V _{D C}  = 1.5 V, V _{A C}  = 200mV _pp, f  = 1 kHz). The measured peak of differential nonlinearity and integral nonlinearity is  + 0.26/ − 0.67 and  + 0.65/ − 0.59, respectively. At 250 Hz, effective number of bit is 8.4 bits, S F D R  = 66.7 dB and S N D R  = 52.6 dB. Copyright © 2016 John Wiley & Sons, Ltd.     

A 1‐Gbps reference‐less burst‐mode CDR with embedded TDC in a 65‐nm CMOS process

A reference‐less all‐digital burst‐mode clock and data recovery circuit (CDR) is proposed in the paper. The burst‐mode CDR includes a coarse and a fine time‐to‐digital converter (TDC) with embedded phase generator. A low‐power current‐starved inverter is employed as the delay unit of the fine TDC to acquire the high measurement resolution. A calibration method to diminish the inherent delay is used to reduce the quantization error of the recovery clock. The proposed CDR is fabricated in a 65‐nm CMOS process. Experiment results show that the CDR operates from 0.9 to 1.1 Gbps and have a 13‐bit consecutive identical digits (CIDs) tolerance.     

A 6‐Gbps/lane receiver for a clock‐forwarded link in 65‐nm CMOS process

For a 6‐Gbps/lane clock‐forwarded link, a wireline receiver has been developed. The phases of the sampling clocks are aligned to the center of the input data eye by a clock and data recovery (CDR) circuit. In the CDR circuit, the sampling clock phases are rotated by a phase rotating phase locked loop (PLL). A three‐tap decision feedback equalizer (DFE) compensates for the loss of cable together with a continuous‐time linear equalizer (CTLE) to ensure sufficient eye opening for the CDR circuit to find the optimum sampling phase. The DFE coefficients are adaptively calculated based on the data and edge samples. Implemented in a 65‐nm CMOS process, the three‐lane 6‐Gbps/lane receiver for a clock‐forwarded link occupies 0.63 mm² including pads and consumes 288 mA from a 1.2‐V supply. Copyright © 2015 John Wiley & Sons, Ltd.     

A 6th‐order 75 dB‐DR 10.7 MHz 3.3 V CMOS bandpass ΣΔ modulator sampled at 37.05 MHz

This paper describes the design and the implementation of a 6th‐order bandpass ΣΔ modulator to be used for IF digitizing at 10.7 MHz of a broadcasting FM radio signal. The modulator is sampled at 37.05 MHz. This sampling frequency value allows to optimize both modulator and overall receiver channel performance. The modulator has been implemented in a standard double‐poly 0.35 µm CMOS technology using switched capacitor (SC) technique and consumes 116 mW from a single 3.3 V power supply. The modulator features 75 dB dynamic range and 66 dB peak‐SNR within a 200 kHz bandwidth (FM bandwidth). Third‐order intermodulation products are suppressed by –78dBc. Copyright © 2004 John Wiley & Sons, Ltd.     

A 13 bit 10 MHz bandwidth MASH 3–2 Σ∆ modulator in 90 nm CMOS

In this paper, a new multi loop sigma‐delta (ΣΔ) modulator is proposed which employs one order redundant noise shaping in the first stage so the effect of the quantization noise leakage is minimized. Thus, analog circuit requirements are considerably relaxed compared to the conventional Multi‐stAge‐noise‐SHaping (MASH) structures. This enhancement makes the structure appropriate for low voltage and broadband applications. The proposed architecture is compared with traditional high‐order structures, and the advantages are demonstrated by both the analysis and behavioral system level simulations. As a prototype, the proposed MASH 3–2 sigma‐delta modulator is designed, and the detailed design procedure is presented from the system level to the circuit level in a 90 nm CMOS technology. Circuit level simulation results show that the modulator achieves a peak signal‐to‐noise and distortion ratio of 79.4 dB and 79 dB dynamic range over a 10 MHz bandwidth with a sampling frequency of 160 MHz. It consumes 35.4 mW power from a single 1 V supply. Copyright © 2012 John Wiley & Sons, Ltd.     

A simultaneously bidirectional inductively coupled link in a 0.13‐µm CMOS technology

A simultaneously bidirectional inductively coupled link has been developed to provide higher signaling bandwidth for a given inductively coupled channel. Two types of echo signals, that is, the resistive and inductive echo signals, are canceled without an inductive replica load to save silicon area. The resistive echo signal is canceled with a replica driver driving a resistive replica load, while the inductive echo signal is canceled by deliberately controlling the timing of a receiver comparator. The prototype implemented in a 0.13‐µm complementary metal–oxide–semiconductor (CMOS) technology occupies 0.019 mm² including an on‐chip channel inductor and shows 9.1‐pJ/b energy efficiency at 3.0‐Gbps signaling bandwidth, that is, 1.5 Gbps in each signaling direction. Copyright © 2016 John Wiley & Sons, Ltd.     

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

This paper presents a high resolution time‐to‐digital converter (TDC) for low‐area applications. To achieve both high resolution and low circuit area, we propose a dual‐slope voltage‐domain TDC, which is composed of a time‐to‐voltage converter (TVC) and an analog‐to‐digital converter (ADC). In the TVC, a current source and a capacitor are used to make the circuit as simple as possible. For the same reason, a single‐slope ADC, which is commonly used for compact area ADC applications, is adapted and optimized. Because the main non‐linearity occurs in the current source of the TVC and the ramp generator of the ADC, a double gain‐boosting current source is applied to overcome the low output impedance of the current source in the sub‐100‐nm CMOS process. The prototype TDC is implemented using a 65‐nm CMOS process, and occupies only 0.008 mm². The measurement result shows a dynamic range with an 8‐bit 8.86‐ps resolution and an integrated non‐linearity of ±1.25 LSB. Copyright © 2016 John Wiley & Sons, Ltd.     

A very low complexity IR‐UWB transmitter with BPSK modulation for balanced antenna

A very low complexity impulse radio‐ultrawideband (IR‐UWB) transmitter suitable for balanced antenna is presented. This all‐digital transmitter employs the binary phase‐shift keying (BPSK) modulation scheme and eliminates the need for a balun. Also, a new Gaussian monocycle pulse generator is proposed which is used as impulse transmitted signal. The transmitter circuit was designed in 0.18‐μm complementary metal–oxide–semiconductor technology. The post‐simulation results show that the core chip size was only 0.02 mm². The output amplitude pulse yielded 150 mV peak‐to‐peak under a supply voltage of 1.8 V. Simulation results show that the transmitter consumes 8.5 pJ/pulse for 200‐MHz pulse repeating frequency. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

A 120–420 MHz delay‐locked loop with multi‐band voltage‐controlled delay unit

A low‐jitter and low‐power dissipation delay‐locked loop (DLL) is presented. A proposed multi‐band voltage control delay unit (MVCDU) is employed to extend the operation frequency of the DLL by controlling the delay cell within the MVCDU. The jitter of DLL is reduced due to MVCDU's low sensitivity. The delay cell in the MVCDU employs a differential configuration to further reduce the noise impact from the fluctuation in the supply and ground voltage. The operating frequency of the proposed DLL ranges from 120 to 420 MHz. The proposed design has been fabricated in a TSMC 0.18µm CMOS process. The measured RMS and peak‐to‐peak jitters are 4.86 and 34.55 ps, respectively, at an operating frequency of 300 MHz. The power dissipation is below 14.85 mW at an operating frequency of 420 MHz. Copyright © 2010 John Wiley & Sons, Ltd.     

A power‐area‐efficient, 3‐band, 2‐RX MIMO,TD‐LTE receiver with direct‐coupled ADC

In this work, a power‐area‐efficient, 3‐band, 2‐RX MIMO, and TD‐LTE (backward compatible with the HSPA+, HSUPA, HSDPA, and TD‐SCDMA) CMOS receiver is presented and implemented in 0.13‐μm CMOS technology. The continuous‐time delta‐sigma A/D converters (CT ?Σ ADCs) are directly coupled to the outputs of the transimpedance amplifiers, eliminating the need of analog anti‐aliasing filters between RX front‐end and ADCs in conventional structures. The strong adjacent channel interference without low‐pass filter attenuation is handled by proper gain control. A low‐power small‐area solution for excess loop delay compensation is implemented in the CT ?Σ ADC. At 20 MHz bandwidth, the CT ?Σ ADC achieves 66 dB dynamic range and 3.5 dB RX chip noise figure is measured. A maximum of 2.4 dB signal‐to‐noise ratio degradation is measured in all the adjacent channel selectivity (ACS) and blocking tests, demonstrating the effectiveness of the strategy against the low‐pass filter removal from the conventional architecture. The receiver dissipates a maximum of 171 mW at 2‐RX MIMO mode. To our best knowledge, it is the first research paper on the design of fully integrated commercial TD‐LTE receiver. Copyright © 2014 John Wiley & Sons, Ltd.     

A 3.6‐mW 6‐GHz current‐reuse VCO‐buffer with improved load drivability in 65‐nm CMOS

A new current‐reuse voltage‐controlled oscillator (VCO)‐buffer with enhanced load drivability is proposed. It incorporates a PMOS‐based source follower stacked atop a NMOS‐based LC VCO to share the bias current, while preventing the voltage stress at any oscillation node from exceeding the 1.2‐V technology voltage limit. Also, ac‐coupling networks are avoided between the VCO and buffer, improving the Q of the LC tank while minimizing parasitics. With internal buffering, the VCO can directly drive up a 50‐Ω load for testing, or to withstand a large capacitive load in on‐chip local oscillator distribution, particularly suitable for multi‐band MIMO WLAN radios . The fabricated VCO‐buffer in 65‐nm CMOS measures 13.8% tuning range from 5.64 to 6.4 GHz, consumes 3.6 mW at 1.2 V and exhibits ?108.84 dBc/Hz phase noise at 1‐MHz offset. Copyright © 2013 John Wiley & Sons, Ltd.     

A linear,ultra wideband,low‐power, 2.1–5 GHz,VCO

A linear, Ultra Wideband, low‐power VCO, suitable for UWB‐FM applications is proposed, forming the main part of a UWB‐FM transmitter. The VCO is designed in TSMC 90thinspacenm digital CMOS process and includes a Source‐Coupled Multivibrator, used as current‐controlled oscillator (CCO) which generates output frequencies between 2.1 and 5 GHz and a voltage‐to‐current (V‐to‐I) converter which translates the VCO input voltage modulation signal to current. Two single‐ended inverter buffers are employed to drive either a differential or a single‐ended UWB antenna. The presented VCO is designed for 1 V power supply and exhibits a linear tuning range of 2.1–5 GHz, a differential output power of ?7.83 dBm±0.78 dB and low power consumption of 8.26 mW, including the output buffers, at the maximum oscillation frequency. It is optimized for a very high ratio of tuning range (81.69%) over power consumption equal to 9.95 dB. The desired frequency band of 3.1–5 GHz for UWB‐FM applications is covered for the entire industrial temperature range (?40 to 125^°C). Copyright © 2010 John Wiley & Sons, Ltd.