基于DCT变换的彩色图像置乱数字水印算法

介绍了离散余弦变换的系数特征,提出了一种基于离散余弦变换的彩色图像置乱数字水印算法。算法是将数字水印置乱加密后微小的扰动原始彩色图像经离散余弦变换后的对应系数,从而达到数字水印嵌入的目的。仿真实验表明算法简单高效,原图像与嵌入水印后图像差异小,水印提取准确,能较好的保证数字水印不可感知性,在对嵌入水印图像进行各种加噪、裁剪、旋转、锐化等处理后,水印仍有较强的鲁棒性。     

一种基于DCT变换的自适应彩色图像水印算法

提出了一种基于离散余弦变换的彩色图像数字水印算法.首先原始彩色图像的绿色分量进行8 x 8分块DCT变换.计算每块的噪声阈值,相应调整每块选取的两个中频系数的大小,把经过Arnold置乱加密的二值水印图像嵌入.水印提取时,不需要原始图像.实验结果表明,该算法能有效抵抗JPEG压缩、裁剪、加噪、图像增强等攻击,具有良好的透明性和较强的稳健性.     

一种用于版权通知和保护的 多功能彩色图像水印算法

本文提出一种用于版权通知和保护的多功能彩色图像水印算法.其基本思想是在彩色图像的不同区域分别嵌入可见水印和不可见水印.根据归一化块方差特性在空域中自适应地嵌入可见水印,以实现版权通知功能.利用抖动调制技术在离散余弦变换域(DCT)中嵌入可盲抽取的不可见水印,以实现版权保护功能.实验结果表明,嵌入的可见水印很难去除,不可见水印对彩色图像的质量影响很小,并对常规处理具有较好的鲁棒性.     

基于整数小波变换的彩色视频水印算法

提出了一种基于整数小波变换的视频水印技术.算法首先对水印进行混沌加密和Arnold置乱处理和借助密钥选取r帧视频;其次对选取视频帧的每一通道进行互不重叠的8×8分块和对选取的每一分块进行1级整数小波变换;最后根据视觉掩蔽特性来自适应调整两相邻块对应高频子带均值之间的大小关系以嵌入水印.实验表明,该算法实现简单,具有较好的透明性和鲁棒性.     

基于DWT-DCT-SVD算法的数字音频水印性能评价分析

音频作品被非法篡改会导致作者利益受到侵害，因此音频水印嵌入提取算法的研究在数字产品版权保护中具有重要的研究价值。针对音频水印的特性及评价进行分析，分别基于离散小波变换、离散余弦变换以及DWT-DCT-SVD等算法，重点研究音频水印评价标准中透明性和鲁棒性问题。考虑相同音频及水印，针对不同的嵌入提取算法从透明性及鲁棒性两方面进行对比分析。结果表明，DWT-DCT-SVD算法在透明性及鲁棒性方面更具优势，为数字产品版权保护中音频水印算法的选择、应用及优化提供了重要的理论及应用依据。     

一种基于离散余弦变换与奇异值分解的数字图像水印算法

结合奇异值分解（SVD）和离散余弦变换（OCT）的特点,提出了一种基于离散余弦交换与奇异值分解的数字图像水印算法.该算法能够很好地解决透明性和鲁棒性之间的矛盾.算法中采用经过置乱变换的灰度图作为水印,不仅增加了嵌入的信息量,而且提高了水印的安全性.实验结果表明,该算法不仅具有较好的透明性,而且对常见攻击如：叠加噪声、JPEG压缩、滤波以及几何攻击等具有较好的鲁棒性.     

基于离散四元数余弦变换的彩色图像数字水印技术

将离散四元数余弦变换(DQCT)应用于彩色图像的数字水印技术中,提出了一种在彩色图像中嵌入水印的新技术。应用四元数理论把彩色图像作为一整体进行余弦变换,在彩色宿主图像的DQCT域中实现彩色水印图像的嵌入。实验表明,该方法具有较好的抗压缩能力,对高斯噪声、椒盐噪声和缩放攻击具有较好的鲁棒性。     

基于纠错编码和扩频调制的彩色图像水印算法

提出一种基于纠错编码和码分多址(CDMA)的彩色图像水印算法,先后将秘密信息进行Arnold置乱,纠错编码,扩频调制.提取宿主图像的绿色分量,对其进行离散余弦变换,将预处理的水印嵌入到变换后的部分中频区域.水印提取部分,首先对待测图像的绿色分量做离散余弦变换,其次提取中频部分的水印信息,将提取的值和由密钥得到的Gold...     

基于DCT的自适应多重彩色图像盲水印算法

针对现有图像水印算法的一些不足,提出了一种基于离散余弦变换的自适应多重彩色图像盲水印算法。该算法根据彩色载体图像内容特点,将预处理后的不同二值图像水印自适应地嵌入到其绿色分量的离散余弦变换低频系数和中频系数,实现了不同水印在彩色载体图像中的嵌入及盲提取。实验结果表明,该算法在保证不可觉察性的前提下能够较好地抵抗各类常规攻击,具有良好的稳健性。     

基于Arnold置乱和DCT变换的图像水印算法

采用灰度图像为水印信息,对基本离散余弦变换域图像数字水印算法进行改进,为保证信息的安全性,在嵌入宿主图像之前结合Arnold变换进行加密。通过在图像块离散余弦变换域中修改中频区来嵌入不同强度的水印。实验结果证明该算法提高了水印检测的准确性,并且该算法具有较好的不可见性和鲁棒性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.