面向能源互联网的电气信息类研究生培养改革

本文研究面向全球能源互联网的三方（国内高校+企业+海外高校）联合培养的研究生创新与实践能力培养模式。充分利用高校、电网和电气设备制造业企业的不同环境和资源,打造三方（国内高校+企业+海外高校）联合培养导师队伍;建立适应全球能源互联网需求的科研创新实践训练项目库优化和改革电气信息类研究生创新实践方式,突出研究生工程素质、工程实践能力和创新思维的一体化培养。     

基于科研平台的研究生创新能力培养

科研平台是培养研究生科研水平和创新能力的主要载体。建立具有实用价值的科研平台,对于专业硕士综合素质的提高和创新能力的培养具有重要意义。以燕山大学电子信息类控制工程领域为例,介绍了近几年专业硕士研究生实践能力培养现状,对科研平台在研究生培养中的作用及成效进行分析,并给出了科研平台的运营与管理模式,对研究生创新能力培养具有一定的指导意义。     

新兴特色专业科研反哺教学多向融合机制探析

本文从新兴特色专业定位、培养方案和教学体系、课程建设、人才梯队建设、实践平台建设、创新性人才培养、教学资源和平台、企业互动交流等多个角度,就实现新兴特色专业优势科研资源向教学资源高效反哺的多向融合机制进行了分析和研究.实践表明,这项多向融合机制可有效促进新兴特色专业的教学资源建设和教学效果提升,有利于培养学生多学科知识的综合应用和创新实践能力.     

新工科背景下“互联网+金融”的计算机类人才培养模式探索与实践

新时代经济的发展对传统工程专业人才培养提出了新的挑战。随着互联网金融这类新兴行业的发展需要大量懂金融和管理又懂互联网信息技术的新工科人才。本文为适应新兴产业和新经济的需要构建面向"互联网+金融"的"三型"融合计算机类新工科人才协同培养模式。探究应用型、复合型和卓越型三型子模式两两相互之间关联融合的内在机制,应用于金融信息产业的计算机类新工科人才培养定位与实施的现实问题。按照以成果为导向(OBE)教育理念构建的多学科交叉协同的课程体系。解决面向"互联网+金融"的计算机类新工科人才培养中如何完善实践课程体系、实践教学等问题。     

电气工程专业学位研究生联合培养模式

中国农业大学电气工程专业按照双一流建设的目标和专业学位研究生培养要求，提出面向人才培养、科技创新、社会服务三位一体的电气工程专业学位培养模式。总结了联合培养模式改革的目标、管理模式、运行机制、优缺点和取得的成效，并为今后联合培养模式的发展及建设提出合理化建议，为建立健全新型研究生校企联合培养机制，加快推进学校电气工程“双一流”学科建设提供支撑。     

分子遗传学教学策略初探

分子遗传学是21世纪科学的前沿学科,已成为生命科学类各专业研究生的专业学位课,而研究生教学以培养自主学习、科研创新等为目标。本文结合本学院的特色,从教学内容、方法、考核等方面,结合多年分子生物学和遗传学等的教学经验,对新开研究生课程分子遗传学进行探讨。     

以学生发展为中心的开放式人才培养

为满足电子信息产业高速发展带来的高素质人才需求,武汉大学电子信息学院结合自身学科定位,探索以学生发展为中心的开放式人才培养模式。以培养电子信息类创新拔尖人才为总体要求,提出切实可行的建设方案,包括开放式培养方案、开放式课程设置和开放式教学方式,初步形成以学生发展为中心的开放式人才培养体系,为高等学校电子信息类拔尖创新人才培养探索与实践提供借鉴和参考。     

以学生发展为中心的开放式人才培养探索与实践

为顺应电子信息产业高速发展带来的高素质人才需求，武汉大学电子信息学院结合自身学科定位，探索以学生发展为中心的开放式人才培养模式。以培养电子信息类创新拔尖人才为总体要求，提出切实可行的建设方案，包括开放式培养方案、开放式课程设置和开放式教学方式，初步形成以学生发展为中心的开放式人才培养体系，为高等学校电子信息类拔尖创新人才培养探索与实践提供借鉴和参考。     

现代产业学院人才培养需融入劳动教育

劳动教育在现代产业学院人才培养模式创新中占有重要作用。现代产业学院必须突破传统教育理念,以产业需求主导人才培养方向,将劳动教育理念贯穿人才培养全过程。以南通大学通科微电子学院人才培养模式创新为例,结合人才培养方案、师资队伍结构、课程体系、人才培养考核评价机制等四个方面创新,论述了劳动教育在现代产业学院人才培养模式创新中的作用,实现立德树人根本任务,培养产业所需的高素质应用型、复合型、创新型人才。     

“电力电子技术”课程教学方法研究

本文从"电力电子技术"课程教学及人才培养角度出发,在培养专业兴趣、发挥科研优势、加强实验教学和注重实践教学等方面对教学方法和手段进行探讨。这样可以充分发挥了科研创新、数字仿真实验、实践在教学中的作用,从而突出对学生的创新、工程实践能力培养。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.