高速光纤系统中光双二进制传输性能分析

研究了光双二进制调制格式的传输性能,分析了光双二进制调制格式的不同实现形式及其对应的时频特性,并进行了仿真。在此基础上,讨论了采用低通滤波器实现光双二进制调制格式时滤波器带宽对调制码型的影响。     

相位整形二进制传输(PSBT)传输系统的研究

PSBT(相位整形二进制传输)是光双二进制编码的一种。文章从光双二进制编码入手,给出了PSBT调制格式的编码方法和传输特性。为了弥补PSBT码型在传输中眼图张开度性能的缺陷,文章介绍了两种改进的PSBT编码,分别为E-PSBT和BL-PSBT,以及这两种编码的传输特性。     

相位整形二进制传输（PSBT）传输系统的研究

PSBT（相位整形二进制传输）是光双二进制编码的一种。文章从光双二进制编码入手，给出了PSBT调制格式的编码方法和传输特性。为了弥补PSBT码型在传输中眼图张开度性能的缺陷，文章介绍了两种改进的PSBT编码，分别为E-PSBT和BL-PSBT，以及这两种编码的传输特性。     

40 Gbit/s光纤传输系统中先进调制格式的性能分析

使用Optisystem软件,对DRZ(双二进制归零)、MDRZ(改进的双二进制归零)、CSRZ(载波抑制归零)以及RZ-DPSK(归零差分相移键控)四种调制格式在40Gbit/s单信道系统中进行了仿真分析。通过光谱图和眼图及Q值的结果,分析四种调制格式在长距离传输时的性能。     

高速光纤通信系统调制技术仿真研究

构建了非归零码、归零码、载波抑制归零码、光双二进制码、改进的双二进制归零码等五种光强度调制格式在40Gb／s系统中的单信道传输模型,并采用OptiSystem7．0软件对其进行了仿真。分析比较了这五种调制格式的光谱图和眼图在非线性容限、色散容限、传输距离方面的优缺点,总结了它们的基本性能及应用场合。结果表明,MDRZ具有非线性容忍度最高、频谱效率高、色散容忍度较高及传输距离较远等特点,是高速光纤通信系统中很有潜力的调制格式。     

40Gb/s光纤传输系统中四种调制格式的性能比较

使用Opt i s ys t em软件,对40Gb/s单信道传输系统中非归零(NRZ)、归零(RZ)、光双二进制(ODB)、改进的光双二进制归零(MD-RZ)四种调制格式进行仿真。长距离传输后,MD-RZ的眼睛睁开度最大,Q值也很高,具有较好的色散容限和非线性容限,适合长距离传输。     

双二进制调制在高速LiNbO3光调制器上的实验实现

通过实验方式在LiNbO3光调制器上实现了比特率为11.3 Gb/s的光信号的双二进制调制格式,测试并分析了相关的实验参数,包括调制前后的电眼图、光眼图,以及经过长距离光纤传输后的性能编号及比较等.实验证明,经过双二进制调制后的光信号经过长距离传输后较未调制的光信号眼图具有明显的改善.     

基于单边带调制的直接探测光OFDM-RoF系统研究

研究基于单边带调制(SSB)的直接探测光正交频分复用-光载射频(OFDM-RoF)系统的性能。10Gbit/s的二进制数据信号经过QAM符号映射和OFDM调制后,与10GHz射频信号混频并驱动双电极LiNbO3马赫-曾德尔调制器(LN-MZM)产生SSB-OFDM信号,调制信号通过光纤传输至基站,进行直接探测转换为毫米波电信号后再无线发送到用户端。仿真结果证实,OFDMRoF系统在4QAM和16QAM两种调制格式下的EVM都满足FEC的要求。同时,理论分析并仿真验证存在一个最佳调制指数可以使信号传输性能达到最佳,并且最佳调制指数与光纤长度无关。     

DRZ和MD-RZ码光纤传输性能分析

介绍了光双二进制归零码DRZ和改进的双二进制归零码MD-RZ的产生原理和特点,通过光通信仿真软件产生了这两种信号,并给出了光谱图.重点设计了一个40Gb/s的单信道光纤传输系统,对两种码型进行了模拟,通过对Q值的结果来分析其非线性容限和传输距离,并与CSRZ码的传输性能进行对比.     

新型改进光双二进制传输的编解码方案

提出了改进型光双二进制信号在高速率（≥10Gbit／s）传输时预编码的一种新方案。通过分析编解码过程，证明该信号传输时不易受码间干扰影响，能用二进制强度调制一直接检测的系统接收信号。仿真产生了该信号的2种码型。结果表明，采用色散补偿技术能使MD-NRZ和MD-RZ信号在长距离传输后克服眼图失真，MD-RZ信号比MD-NRZ信号在传输后有更低的误码率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.